MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .
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LS3250SC
LS3250SB
T0-92
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Untitled
Abstract: No abstract text available
Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .
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LS3250SB
T0-92
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Untitled
Abstract: No abstract text available
Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. See Packaging Information . LS3250SB Features:
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LS3250SB
LS3250SB
OT-23
OT-23
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Abstract: No abstract text available
Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SB Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3550SB
LS3550SB
OT-23
OT-23
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BARE die
Abstract: No abstract text available
Text: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SA Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3550SA
OT-23
OT-23
BARE die
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Untitled
Abstract: No abstract text available
Text: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SC Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3550SC
T0-92
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Untitled
Abstract: No abstract text available
Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SB Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3550SB
T0-92
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QF20AA60
Abstract: DIODE BZ QF20AA40
Text: TRANSISTOR MODULE(THREE PHASES BRIDGE TYPE) QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF20AA40/60
QF20AA
IC20A,
VCEX400/600V
VCC300V
50ms50s
s50ms
QF20AA60
QF20AA60
DIODE BZ
QF20AA40
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qf30aa60
Abstract: QF30AA40 IC 7403
Text: TRANSISTOR MODULE(THREE PHASES BRIDGE TYPE) QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF30AA40/60
QF30AA
VCEX400/600V
TAB110
IC30A,
VCC300V
qf30aa60
QF30AA40
IC 7403
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IC 7403
Abstract: QF50AA40 QF50AA60 transistor bw 51
Text: TRANSISTOR MODULE(THREE PHASES BRIDGE TYPE) QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF50AA40/60
QF50AA
VCEX400/600V
TAB110
IC50A,
IC 7403
QF50AA40
QF50AA60
transistor bw 51
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QF15AA60
Abstract: QF15AA40 s50ms IC15AV
Text: TRANSISTOR MODULE(THREE PHASES BRIDGE TYPE) QF15AA40/60 QF15AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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QF15AA40/60
QF15AA
IC15A,
VCEX400/600V
QF15AA60
Ic15A
Ic10A
QF15AA60
QF15AA40
s50ms
IC15AV
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Untitled
Abstract: No abstract text available
Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing. See Packaging Information . LS3250SA Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3250SA
LS3250SA
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
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LS3250SA
T0-92
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transistor 8772
Abstract: Transistor C 4927 8772 transistor CGH35030F
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
transistor 8772
Transistor C 4927
8772 transistor
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RO4350B
Abstract: CGH35030F CGH35030-TB 10UF 470PF
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
RO4350B
CGH35030-TB
10UF
470PF
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Untitled
Abstract: No abstract text available
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
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PAR ofdm
Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH27030F
CGH27030F
CGH2703
PAR ofdm
CGH27030
CGH27030-TB
RO4350B
10UF
470PF
str f 3626
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
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transistor 17556
Abstract: 17556 transistor TC 9147 10UF 470PF CGH27030F CGH27030-TB transistor 9047
Text: PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH27030F
CGH27030F
CGH2703
transistor 17556
17556 transistor
TC 9147
10UF
470PF
CGH27030-TB
transistor 9047
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
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STR 5709
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
STR 5709
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str 6754
Abstract: ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030F CGH35030-TB
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
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CGH35030F
CGH35030F
CGH3503
str 6754
ts 1640-1
str 6754 circuit
STR W 6754
6819
cree rf
10UF
470PF
CGH35030-TB
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Abstract: No abstract text available
Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV22200
CGHV22200
CGHV22200F
CGHV22
GHV22200P
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