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    TRANSISTOR BW Search Results

    TRANSISTOR BW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SC LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. See Packaging Information . LS3250SB Features: ƒ


    Original     		PDF LS3250SC LS3250SC OT-23 LS3250SB OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. See Packaging Information . LS3250SB Features: ƒ


    Original     		PDF LS3250SB LS3250SB OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SB LS3550SB OT-23 OT-23

    BARE die

    Abstract: No abstract text available
    Text: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SA OT-23 OT-23 BARE die

    Untitled

    Abstract: No abstract text available
    Text: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SC Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SC LS3550SC OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SC Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SC T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SA LS3550SA T0-92

    QF20AA60

    Abstract: DIODE BZ QF20AA40
    Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF20AA40/60 QF20AA IC20A, VCEX400/600V VCC300V 50ms50s s50ms QF20AA60 QF20AA60 DIODE BZ QF20AA40

    qf30aa60

    Abstract: QF30AA40 IC 7403
    Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF30AA40/60 QF30AA VCEX400/600V TAB110 IC30A, VCC300V qf30aa60 QF30AA40 IC 7403

    QF15AA60

    Abstract: QF15AA40 s50ms IC15AV
    Text: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF15AA40/60 QF15AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		PDF QF15AA40/60 QF15AA IC15A, VCEX400/600V QF15AA60 Ic15A Ic10A QF15AA60 QF15AA40 s50ms IC15AV

    Untitled

    Abstract: No abstract text available
    Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3250SA LS3250SA OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3250SA T0-92

    transistor 8772

    Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22

    transistor 8772

    Abstract: Transistor C 4927 8772 transistor CGH35030F
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor

    RO4350B

    Abstract: CGH35030F CGH35030-TB 10UF 470PF
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 RO4350B CGH35030-TB 10UF 470PF

    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    PAR ofdm

    Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
    Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH27030F CGH27030F CGH2703 PAR ofdm CGH27030 CGH27030-TB RO4350B 10UF 470PF str f 3626

    A 12-15 GHz High Gain Amplifier

    Abstract: HEADER RT
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503