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    TRANSISTOR C 1344 Search Results

    TRANSISTOR C 1344 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 1344 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PH2729-65M

    Abstract: No abstract text available
    Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    Original     		PH2729-65M Curren44) 2052-56X-02 PH2729-65M PDF

    Rogers 6010.5

    Abstract: PH1214-20EL PH1214-25M 6010.5 transistor j39
    Text: -F-z = -=-=c =z z .-= = E an AMP company * Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		214-20EL PH1214-20EL PH1214-25M Rogers 6010.5 PH1214-20EL PH1214-25M 6010.5 transistor j39 PDF

    PH2729430M

    Abstract: No abstract text available
    Text: = .- =_ ‘E an AMP company Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz PH2729430M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    Original     		PH2729430M Vccs36 PH2729430M PDF

    13MM

    Abstract: PH3134-2OL transistor f20 PH3134
    Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PH3134-2OL 13MM PH3134-2OL transistor f20 PH3134 PDF

    PH2323-3

    Abstract: NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor
    Text: an AMP cormany CW Power Transistor, 2.3 GHz 3.5W PH2323-3 v2.00 Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package


    Original     		PH2323-3 PH2323-3 NPN TRANSISTOR Z4 RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR Z4 transistor c s z 44 v 4 ghz transistor PDF

    12C TRANSISTOR

    Abstract: transistor j39 transistor J45
    Text: an AMP comnanv Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz v2.00 Features - - - ,320 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PHI21 4-25s l214-25M 12C TRANSISTOR transistor j39 transistor J45 PDF

    PH2731-20M

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry


    Original     		PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz PDF

    b 595 transistor

    Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
    Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


    Original     		PH31355M 15-j3 b 595 transistor Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE PDF

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		214-6M TRANSISTOR Z4 PDF

    PH1214-2M

    Abstract: .15 j63 1.5 j63 1035 transistor
    Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PH1214-2M 214-2M PH1214-2M .15 j63 1.5 j63 1035 transistor PDF

    J37 transistor

    Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
    Text: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors


    Original     		Pti3134-9L t23MM, J37 transistor transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145 PDF

    13MM

    Abstract: PH1214-4M
    Text: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PH1214-4M TT50M5OA 2052-56X-02 13MM PH1214-4M PDF

    PH1012

    Abstract: No abstract text available
    Text: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration


    OCR Scan     		PH1012-70 PH1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n


    OCR Scan     		150ns PH1214-40M PH1214-40M PDF

    transistor c s z 44 v

    Abstract: No abstract text available
    Text: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors


    OCR Scan     		PH2323-1 50M50A 114P5' transistor c s z 44 v PDF

    Untitled

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    OCR Scan     		300ns PH2731-75L PH2731-75L PDF

    Untitled

    Abstract: No abstract text available
    Text: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n


    OCR Scan     		PH1214-100EL PDF

    6010.5

    Abstract: No abstract text available
    Text: an A M P com pany Radar Pulsed Power Transistor, 80W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-80M Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n H igh Efficiency Interdigitated G eo m etry


    OCR Scan     		150ns PH1214-80M PH1214-80M 6010.5 PDF

    Untitled

    Abstract: No abstract text available
    Text: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n


    OCR Scan     		PH2729-25M TT90M50AGROUND ATC100A PDF

    PW400

    Abstract: transistor b 595
    Text: m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p eration Interdigitated G eo m etry


    OCR Scan     		PH1214-2M PH1214-PM PW400 transistor b 595 PDF

    LA 4288

    Abstract: No abstract text available
    Text: m an A M P com pany Radar Pulsed Power Transistor, 90W, 2 is Pulse, 10% Duty 3.1-3.5 GHz PH3135-90S Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n High Efficiency Interdigitated G eo m etry


    OCR Scan     		PH3135-90S ATC100A LA 4288 PDF

    Untitled

    Abstract: No abstract text available
    Text: M a n A M P com pany Radar Pulsed Power Transistor, 4W, 100p.s Pulse, 10% Duty 1.2-1.4 GHz PH1214-4M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d Class C O p eratio n Interdigitated G eo m etry


    OCR Scan     		PH1214-4M TT50M50A PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P company Avionics Pulsed Power Transistor, 350W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-350L V2.00 Features • • • • • • • • NPN Silicon Microwave Pow er Transistor C om m on Base Configuration Broadband Class C O peration High Efficiency Interdigitated G eom etry


    OCR Scan     		250ns PH1090-350L PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF