1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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417-12A
1417 transistor
transistor 1417
microwave amplifier 2.4 ghz 10 watts
c 1417
1417-12A
2.4 ghZ rf transistor
amplifier TRANSISTOR 12 GHZ
RF TRANSISTOR 1 WATT
POWER TRANSISTOR 1 WATT 2.4 GHZ
1417 ic
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55LT
Abstract: No abstract text available
Text: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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200mA
55LT
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2 watt rf transistor
Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Text: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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transistor s 1014
Abstract: common base transistor
Text: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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CD9581
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CD9581 TO-92 CBE General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25deg C DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO
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CD9581
25deg
C-120
CD9581
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BF199
Abstract: MW front END transistor NPN BF199 transistor BF199 c 2579 transistor
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
MW front END
transistor NPN BF199
transistor BF199
c 2579 transistor
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BF199
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CD9581 TO-92 CBE General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25deg C DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO
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CD9581
25deg
C-120
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2N4923
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR EC 2N4923 TO-126 B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS Ta=25 deg C DESCRIPTION VCBO Collector -Base Voltage
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2N4923
O-126
C-120
2N4923
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transistor smd marking BA RE
Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
transistor smd marking BA RE
transistor smd marking PE
FR MARKING SMD TRANSISTOR
CMBT2484
transistor smd marking BA sot-23
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ts 4141 TRANSISTOR smd
Abstract: CMBT2484
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
ts 4141 TRANSISTOR smd
CMBT2484
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2N5551
Abstract: 2N5551 TO92 india limited
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified
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2N5551
25deg
C-120
2N5551
2N5551 TO92 india limited
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2N5401
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified
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2N5401
25deg
C-120
2N5401
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
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CMBT2484
C-120
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transistor K52
Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.
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L-Band 1200-1400 MHz
Abstract: No abstract text available
Text: MICROWAVE POWER TRANSISTOR PH1214-30 • 5t,422Q5 oaaaaat, mto n/A-con p M M M /A / A -C - C iO M P H I. I N C . b3E D o h Am hap The PHI 214-30 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the
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PH1214-30
422Q5
L-Band 1200-1400 MHz
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2S C 4 0 9 3 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS Units: mm noise amplifier at VH F, U H F and C A TV band.
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2SC4093
4093-T
S22e-FREQUENCY
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: FF 90 R 17 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V c es Therm ische Eigenschaften Thermal properties 0,055 °C/W DC, pro Baustein / per module R th J C 0,110 ° c / w DC, pro Zweig / per arm
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3403ET7
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bfr106
Abstract: No abstract text available
Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23
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D02S20D
BFR106
bfr106
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L-Band 1200-1400 MHz
Abstract: 0000F
Text: M/A-COfl P H 0 b3E D Sb4P205 MICROWAVE POWER TRANSISTOR PH1214-60 0000f l 2f i Eh3 Æ I NAP Z M K M //A A -C C OM M PHI, INC. b PH1214-60 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the
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Sb4P205
0000f
PH1214-60
PH1214-60
L-Band 1200-1400 MHz
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vqe 23 c
Abstract: No abstract text available
Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties
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Untitled
Abstract: No abstract text available
Text: FF 200 R 12 KF Therm al properties Therm ische Eigenschaften 0,044 C/W DC, pro Baustein / per module 0,088 C/W DC, pro Zweig / per arm 0,03 °C/W pro Baustein / per module 0,06 °C/W pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties
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nf 0036 diode
Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS
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CM300HA-28H
CM400HA-28H
CM600HA-28H
CM800HA-28H
CM1000HA-28H
nf 0036 diode
Diode 15630
cm50dy-28
CM1200HA-34H
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