SD1143
Abstract: 2SD1143
Text: SD1143 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1143 is 12.2 V Class C Transistor, designed for VHF mobile communications. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold Metalization System
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SD1143
SD1143
112x45°
2SD1143
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SD1222-5
Abstract: IC 785 SD1222
Text: SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES:
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SD1222-5
SD1222-5
the118-136
IC 785
SD1222
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VHB40-28S
Abstract: TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072
Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz
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VHB40-28S
VHB40-28S
112x45°
TRANSISTOR S 838
TRANSISTOR S 813
ic c 838
ASI10727
transistor c 838
transistor A 584
asi1072
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Untitled
Abstract: No abstract text available
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45Â
ASI10601
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HF8-28S
Abstract: ASI10736
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45°
ASI10736
ASI10736
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HF50-12F
Abstract: ASI10596
Text: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely
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HF50-12F
HF50-12F
ASI10596
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PT9733
Abstract: PT97
Text: PT9733 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9733 is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD
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PT9733
PT9733
112x45°
PT97
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Untitled
Abstract: No abstract text available
Text: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely
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HF50-12S
HF50-12S
112x45°
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VHB50-28S
Abstract: ASI10730
Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD
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VHB50-28S
VHB50-28S
112x45°
ASI10730
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BLW31
Abstract: No abstract text available
Text: BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES:
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BLW31
BLW31
112x45°
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VHB50-28F
Abstract: ASI10728
Text: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG
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VHB50-28F
VHB50-28F
ASI10728
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BCW60A
Abstract: BCW60B BCW60C BCW60D
Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage
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BCW60A/B/C/D
OT-23
BCW60A
BCW60B
BCW60C
BCW60D
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F1K marking
Abstract: No abstract text available
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature
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BCW61A/B/C/D
KS5086
BCW61
F1K marking
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BCW General Purpose Transistor
Abstract: l9902
Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation
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OCR Scan
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BCW60A/B/C/D
BCW General Purpose Transistor
l9902
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BCX70K
Abstract: KS3904
Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature
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OCR Scan
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BCX70K
KS3904
BCX70K
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Untitled
Abstract: No abstract text available
Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage E m itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature
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OCR Scan
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BCX70K
KS3904
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCW61A/B/C/D
OT-23
KS5086
BCW61B
BCW61C
BCW61
BCW61A
BCW61B
-10mA,
-50mA,
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Untitled
Abstract: No abstract text available
Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCX70K
OT-23
KS3904
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PDF
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Untitled
Abstract: No abstract text available
Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCX71K
OT-23
KST5086
-10nA
-50mA
-10mA,
-50mA,
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Untitled
Abstract: No abstract text available
Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCW60A/B/C/D
OT-23
BCW60B
BCW60C
BCW60D
BCW60A
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BCW60A
Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t
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OCR Scan
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BCW60A/B/C/D
OT-23
BCW60B
BCW60A
BCW60B
BCW60C
BCW60D
BCW60D
transistor mark code AD
transistor ad 1v
sot 23 mark AD
LC marking code transistor
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T3904
Abstract: 5kfl
Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS {TA=251C C h a ra c te ristic Collector-Base Voltage Coilector-Emitter Voltage Em itter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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BCX70K
T3904
5kfl
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Untitled
Abstract: No abstract text available
Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t
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BCX71K
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BCX71K
Abstract: KST5086
Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t
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OCR Scan
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BCX71K
KST5086
OT-23
-10nA
-2m-32V,
-50mA
-10mA,
-50mA,
BCX71K
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