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    TRANSISTOR C 546 B W 27 Search Results

    TRANSISTOR C 546 B W 27 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 546 B W 27 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: J <Ss.mi-C.on.du.ct oi , One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MJ16014 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage:VCEo(sus) = 450V(Min) • High Switching Speed


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    MJ16014 PDF

    TRANSISTOR SMD MARKING CODE DK

    Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT


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    M3D088 PDTA143ZT PDTC143ZT. 01-May-99) TRANSISTOR SMD MARKING CODE DK 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP PDF

    Untitled

    Abstract: No abstract text available
    Text: Hardware Documentation Data Sheet HAL 54x Hall-Effect Sensor Family Edition Feb. 12, 2009 DSH000023_003EN HAL54x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software


    Original
    DSH000023 003EN HAL54x responsibilityL54x 002EN. OT89-B1 HAL54x 003EN. PDF

    to92ua

    Abstract: No abstract text available
    Text: Hardware Documentation Data Sheet HAL 54x Hall-Effect Sensor Family Edition Feb. 12, 2009 DSH000023_003EN HAL54x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software


    Original
    DSH000023 003EN HAL54x 002EN. OT89-B1 HAL54x 003EN. to92ua PDF

    C 548 B

    Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
    Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and


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    Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product specification date o f issue March 1993 b^Z T> • bbSaiai D02H 71 276 BLV97CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain


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    BLV97CE OT171 MRC17S PDF

    2n6268

    Abstract: double slug tuner NYTRONICS choke JFD MVM010 ta8407 2N6269 PE-1243 Nytronics tunable ASE filter I7665
    Text: File No. 546 RF P o w er T ra n s is to rs Solid State Division 2N6268 2N6269 6 .5 - and 2 -W, 2.3-GHz, E m itte r-B a lla s te d Silicon N -P -N Overlay T ra n s is to rs F o r Use in M icrow ave Pow er A m p lifie rs Fu n d am en tal-F req u en cy O scillators, and Freq u en cy M u ltip liers


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    2N6268 2N6269 2N6268 RCA-2N6268 2N6269* microw268 2N6269 double slug tuner NYTRONICS choke JFD MVM010 ta8407 PE-1243 Nytronics tunable ASE filter I7665 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 — IM E D | T lb M lM S Ü007271. T § NPN EPITAXIAL SILICON TRANSISTOR - LOW NOISE TRANSISTOR T '- ^ . q - i q " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C


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    MMBT5088 OT-23 PDF

    KE724502

    Abstract: I251 diode LB 122 transistor I251 transistor 600 volts 60 amperes ke7245 transistor vc 548 547 TRANSISTOR KE72
    Text: POldEREX INC ' 31E D B TS'IMbSl 0004410 S E3PRX KE724S02 r y - ^ 3 E g ^ r r r g g g - « y » j- yv&.»— r . 3 3 . 3 er . ^ 4 hc^vvk •.:- _ -■ ^ .j^ w -1’. - r ? ! « » » ; Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 1S697 412 92S-7272


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    KE724S02 1S697 92S-7272 BP107, Amperes/600 KE724502 I251 diode LB 122 transistor I251 transistor 600 volts 60 amperes ke7245 transistor vc 548 547 TRANSISTOR KE72 PDF

    Untitled

    Abstract: No abstract text available
    Text: . il. . • ■1 SA01 APEX M IC R O TEC H N O LO G Y CORPORATION • APPLICATIONS HOTLINE 800 546 APEX 800-546-27 39 FEATURES • • • • • • • SINGLE SUPPLY OPERATION WIDE SUPPLY RANGE — 16-100V 20A CONTINUOUS OUTPUT PROGRAMMABLE CURRENT LIMIT


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    6-100V 00177b PDF

    SD1228

    Abstract: D1860
    Text: h "7 > y 7 , $ /T ra n sisto rs 2SD1228M/2SD1860 2 SD 1228 M O C n iflA O lo O U yU^> 7 h P ow er Amp. Eptaxial Planar NPN S ilico n Transistors • • 1 V CE sa t ) tf% . < im S M .% , > '/ X $ T riill/D im e n s io n s (U n it: mm) V * X < Ltl'S o 90mV at lc = 150mA


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    2SD1228M/2SD1860 150mA 150mV 150mA, 300mA, /15mA D1860 2SD1228M SD1228 D1860 PDF

    philips resistor 2322-153

    Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
    Text: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


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    711002b BLV97CE OT171 philips resistor 2322-153 philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


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    2SC5005 2SC5005 SN 4931 2sc 3476 2SC 1885 SN 4931 N PDF

    K/HI-548

    Abstract: Hi1-0548
    Text: HI-546, HI-547, HI-548, HI-549 HARRIS S E M I C O N D U C T O R Sin g le 16 and 8, Differential 8-Channel and 4 -Channel CMOS Analog MUXs with Active Overvoltage Protection August 1997 Features Description Analog Overvoltage Protection 70VP P No Channel Interaction During Overvoltage


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    HI-546, HI-547, HI-548, HI-549 HI-548: HI-549: I-548 K/HI-548 Hi1-0548 PDF

    Untitled

    Abstract: No abstract text available
    Text: That H E W L E T T fttfC J P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 200 MHz Technical Data UTO/UTC 221 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 221 Series is a thin-film highgain, low-noise, RF cascade


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    Applic53 PDF

    Avantek amplifier UTC

    Abstract: avantek utc 523 AVANTEK utc utc 1509 Avantek amplifier 12.5 sa
    Text: AVANTEK INC 4ME D • lim ib b 0007^4]! 2 MAVA u to /u tc 221 series 1NM AN TBBC' ' I Thlri-Film Cascadable Amplifier Module 10 to 200 MHz .^ - '7 4 '0 ^ - 0 FEATURES APPLICATIONS • • • • • • • High Gain iF Stages • Front End Amplifier Frequency Range: 10 to 200 MHz


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    PDF

    Avantek uto 1504

    Abstract: AM/SSC 9500 ic data
    Text: AVANTEK ING M ME D AVANTEK B1 llMlSbb 000000=1 Ô B I A V A UTO/UTC 545 Series Thln-Filrri Cascadable Amplifier 10 to 500 MHz ' T 7 4 - 0 c?'O| FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; +19.0 dBm Typ


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    9503S Avantek uto 1504 AM/SSC 9500 ic data PDF

    Untitled

    Abstract: No abstract text available
    Text: bq2004H j^ B E N C H M A R Q Fast Charge IC Features General Description >- Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004H Fast Charge IC provides comprehensive fast charge control functions together with high-speed


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    bq2004H 150-mil bq2004 16-pin PDF

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


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    BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B PDF

    THT bsc 25

    Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
    Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS


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    BUT15 THT bsc 25 but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode PDF

    c 4977 transistor

    Abstract: UTC 2003 SSC 9500 7107 GP Avantek amplifier UTC transistor 11027 UTC 1098 CA 4977 AVANTEK utc AVANTEK TO-8
    Text: 4 ME D A V A N T E K INC A V A N T n m ' imiSbb OODôOtn Ô BIAVA UTO/UTO 545 Series Thln-Film Cascadable Amplifier 10 to 500 MHz . FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; . +19.0 dBm (Typ


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    packag700 c 4977 transistor UTC 2003 SSC 9500 7107 GP Avantek amplifier UTC transistor 11027 UTC 1098 CA 4977 AVANTEK utc AVANTEK TO-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: m 7*^5^537 OOMb O i q 76T •SGTH _ r s 7 SGS-THOMSON STK2N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N60 ■ ■ . . . V d ss RoS on Id 600 V < 8 Î2 1 .7 A TYPICAL RDS(on) = 5.7 £2 AVALANCHE RUGGED TECHNOLOGY


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    STK2N60 OT-82 OT-194 PDF

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 PDF

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    2SC4228 2SC4228 transistor NEC D 822 P PDF