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    TRANSISTOR C118 Search Results

    TRANSISTOR C118 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C11892E

    Abstract: D12971E D1297 2SJ494 TEA-1035
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2


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    PDF 2SJ494 C11892E D12971E D1297 2SJ494 TEA-1035

    C11892E

    Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3


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    PDF 2SJ495 C11892E 2SJ495 TEA-1035 A3856 m30 tf 125

    transistor c124

    Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C124 E S W transistor IRGPC40FD2 C-123 C-118

    transistor c124

    Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118

    transistor c124

    Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor

    2SK129

    Abstract: PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC
    Text: データ・シート MOS形電界効果パワー トランジスタ MOS Field Effect Power Transistor 2SK1295 Nチャネル パワーMOS FET スイッチング用 工業用 外 形 図(単位:mm) 2SK1295は,Nチャネルエンハンスメント形パワーMOS


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    PDF 2SK1295 2SK1295MOS RDSon50 RDSon70 O-220MP-45F 108-0171NEC 46017NEC 54024NEC 2SK129 PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC

    2SK2478

    Abstract: No abstract text available
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2478 NチャネルパワーMOS FET スイッチング用 工業用 2SK2478はNチャネル縦型 パワー MOS FETで,スイッチング特性が優れており,各種スイッチング電源用途に最適


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    PDF 2SK2478 2SK2478N O-220MP-45F D10270JJ2V0DS00 108-0171NEC 46017NEC 54024NEC 2SK2478

    2SK2141

    Abstract: IEA-695 TEA-572
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2141 Nチャネル パワー MOS FET スイッチング用 工業用 2SK2141はNチャネル縦型 パワー MOS FETで,スイッチング特性が優れており,各種アクチュエータ駆動用途やス


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    PDF 2SK2141 2SK2141N O-220 MP-45F) D11388JJ3V0DS00 108-0171NEC 46017NEC 54024NEC 2SK2141 IEA-695 TEA-572

    PC1094C

    Abstract: 2SK2486 G13006J TEA-572 7824 MAX INPUT VOLTAGE pc1094
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2486 NチャネルパワーMOS FET スイッチング用 工業用 2SK2486はNチャネル縦型 パワー MOS FETで,スイッチング特性が優れており,各種スイッチング電源用途に最適


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    PDF 2SK2486 2SK2486N OP-3MP-88 D10282JJ2V0DS00 108-0171NEC 46017NEC 54024NEC PC1094C 2SK2486 G13006J TEA-572 7824 MAX INPUT VOLTAGE pc1094

    7824 3A

    Abstract: 2SK2480 voltage 10v vdss 150v Id 50A mos fet
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SK2480 NチャネルパワーMOS FET スイッチング用 工業用 2SK2480はNチャネル縦型 パワー MOS FETで,スイッチング特性が優れており,各種スイッチング電源用途に最適


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    PDF 2SK2480 2SK2480N O-220MP-45F D10272JJ2V0DS00 108-0171NEC 46017NEC 54024NEC 7824 3A 2SK2480 voltage 10v vdss 150v Id 50A mos fet

    Untitled

    Abstract: No abstract text available
    Text: OMNI8C RLU Remote Logic Annunciator Model C1180B and C1181B 8 Point Remote Annunciator Logic Modules. DATASHEET Features • • • • • • • • • • • Provides reliable alarm functions for critical alarms Small , compact, surface mounted and easy to use


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    PDF C1180B C1181B 24Vdc IEC61508 C1180 C1181 DSC1180BR01

    C1182

    Abstract: annunciator relay
    Text: OMNI16C RLU Remote Logic Annunciator Model C1182, C1478B and C1479B 16 Point Remote Annunciator Logic Modules. DATASHEET Features • • • • Provides reliable alarm functions for critical alarms Small , compact, surface mounted and easy to use 16 Potential Free Contact Inputs


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    PDF OMNI16C C1182, C1478B C1479B 24Vdc, 48Vdc 85-264Vac/dc C1182 C1478 C1479 C1182 annunciator relay

    TRANSISTOR D2102

    Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
    Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and


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    PDF TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


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    PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    SMD TRANSISTOR L6

    Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
    Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155


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    PDF STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor

    a4w SD transistor

    Abstract: transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1
    Text: Multifunction Preset Counter H7CX Counters • Highly visible display with backlit negative transmissive LCD. • Programmable PV color to visually alert when output status changes screw terminal block models . • Intuitive setting enabled using ergonomic up/down digit keys (4digit models) and DIP switch.


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    PDF NEMA4/IP66 /10kh= C-129 a4w SD transistor transistor PNP C124 diode a4W a4w transistor H7CX-AUD1 transistor NPN c115 omron h7cx C-107 C-118 H7CX-A114D1

    CA6V

    Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
    Text: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG


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    PDF

    IRGPC40FD2

    Abstract: ge c122 transistor c117
    Text: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    PDF IRGPC40FD2 10kHz) GPC40FD2 O-247AC 554S2 IRGPC40FD2 ge c122 transistor c117

    C11892E

    Abstract: TEA-1037 D1297
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.


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    PDF 2SJ495 C11892E TEA-1037 D1297

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3


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    PDF 2SJ494

    transistor c118

    Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
    Text: i?[M [5)y Tr -Jfotitron M ED IU M TO HIGH V O L T A G E Devices. Inc CHIP NUM BER 4 NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 49) CONTACT METALLIZATION B ase, Emitter and Collector Solder C oated 9 5 /5 % lead /tin. ASSEMBLY RECOMMENDATIONS .300” It is advisable that:


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    PDF 2N6258, 2N6259 C-118 transistor c118 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259

    2NG259

    Abstract: transistor c118 2n6258
    Text: 8368602 SOL ITRON DEVICES INC TS 95D 02909 D DE | A3t.At.0E OOOSTm 0 y - j 3 ^/5 - 1~ M ED IU M TO HIGH V O LT A G E CHIP NUMBER Devices, Ine IMPINI SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 49 CONTACT METALLIZATION E a se , Emitter an d Collector Solder C oated 95/5% lead /tin.


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    PDF 2N6258, 2NG259 C-118 2NG259 transistor c118 2n6258

    2SJ461

    Abstract: ITT DIODE W7 MARKING J1A C10535J C10943X marking JE FET D1073
    Text: • S /— h MOSJfê M O S Field Effect Transistor 2SJ461 MOS FET r§ jâ L - ^ "f y 2 S J 4 6 1 Ü 2 . 5 V H 2 Ì Ì J ^ i ' 7 ° C O P 5 1 + ^ ^ M i M O S F E T ? ' <fe U , t e l B E T ' l g l i l T # , U £ - t t A , 0 f f ii/ L r t i h A ' O h* 7 - f


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    PDF 2SJ461 D10730JJ4V0DS00 2SJ461 ITT DIODE W7 MARKING J1A C10535J C10943X marking JE FET D1073

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


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    PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361