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    TRANSISTOR C1237 Search Results

    TRANSISTOR C1237 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C1237 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    BUX21

    Abstract: SGS-Thomson BUX21
    Text: • I 7 ^ 2 3 7 o p a a ^ B ? a ■ H ~ " - 3 3 - i s _ r = 7 SCS-THOMSON * 7# B U X 21 S G S- TH OMSON 3ÜE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX21 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, inten­


    OCR Scan     		BUX21 BUX21 10HHz SGS-Thomson BUX21 PDF

    transistor c1237

    Abstract: TSD250N05V
    Text: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250


    OCR Scan     		c1237 Q03QLi02 TSD250N05F TSD250N05V TSD250N05F/V O-240) PC-029« transistor c1237 TSD250N05V PDF

    Untitled

    Abstract: No abstract text available
    Text: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE


    OCR Scan     		IRFK6H450 SCM720 O-240) PC-029« PDF

    SGSP579

    Abstract: No abstract text available
    Text: 3QE D • T ^ E a? 0030071 4 ■ -\3 ^ s r- SGS-THOMSON HLiÊTTMôÊi s 6 S TH0MS0N SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 VDSS 500 V f*DS on 0.7 Q •d 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE -9A FOR UP TO 350WSMPS


    OCR Scan     		SGSP579 350WSMPS 100KHZ SGSP579 PDF

    STHV82

    Abstract: STHV82FI
    Text: T'îS'îaS? £ t7 0 0 4 5 ^ 0 357 • S G T H SGS-THOMSON L i « ! STHV82 STHV82FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV82 STHV82FI ■ . . . . . ■ V dss R DS on Id 800 V 800 V <2Q < 2 Ü 5.5 A 3.6 A TYPICAL RDS(on) = 1.65 £2


    OCR Scan     		STHV82 STHV82FI 7T5T237 STHV82/FI STHV82 STHV82FI PDF

    23N05

    Abstract: stk 0055 23n06 23N05L
    Text: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V


    OCR Scan     		STK23N05L STK23N06L STK23N OT-82 OT-194 TK23N05L TK23N06L 0S970 7T2R237 23N05 stk 0055 23n06 23N05L PDF

    Untitled

    Abstract: No abstract text available
    Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STB6NA60 O-262) O-263) O-262 O-263 PDF

    A80N

    Abstract: No abstract text available
    Text: / I T * 7# S G S -T H O M S O N M œ m iO T tM O iË S S T V 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STV3NA80 • . . . . . . V dss RDS on Id 800 V < 4 .5 Q 3.1 A TYPICAL Rc>s(on) = 3.5 Cl ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STV3NA80 BMCRQBLBC7R68ICS SO-10 0068039-C A80N PDF

    STP11N06

    Abstract: D073434 Vk-10V
    Text: r Ä T z S G S -T H O M 7 # S O N KülD gl3 l [ L I C T i B ! I B ® S S T P 1 1 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP11N06 60 V • . . . . . . . RDS(on < 0.25 Id a 11 A TYPICAL RDS(on) = 0.21 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP11N06 STP11N06 O-220 7T2T237 0D73437 O-220 P011C 7C12C1237 D07343Ã D073434 Vk-10V PDF

    tcm600

    Abstract: STD8N10L tcm600-400 DIODE OA-200
    Text: f Z ^ 7 7 S C S - T H O M S O N / r a n e ^ iiL iC T i iD B i S T D 8 N 1 0 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD8N10L V dss R D S (o n Id 100 V < 0.33 n 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STD8N10L STD8N10L O-251) O-252) 0068771-E 072b3 O-252 7ci2c1237 0072fc tcm600 tcm600-400 DIODE OA-200 PDF

    STP8N50

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 £ Z T * 7# QD4b33b SD Ì • SGTH S G S -T H O M S O N [M tM tiL IO T « ! S T P 8 N 5 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP8N50XI . ■ . . . ■ . dss 500 V R D S {on Id < 0.85 n 4.5 A TYPICAL RDS on) = 0.74 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		QD4b33b STP8N50XI 150aC STP8N50 PDF

    Diode SMD ED 7ca

    Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
    Text: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.


    OCR Scan     		STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C PDF

    Untitled

    Abstract: No abstract text available
    Text: £=7 SGS-THOMSON * 7 lü W 1 . iilIJ iC T W I l g ê _ L 6 2 0 4 DMOS DUAL FULL BRIDGE DRIVER ADVANCE DATA • SUPPLY VOLTAGE UP TO 48V ■ R ds on 1.2Q (25°C) . CROSS CONDUCTION PROTECTION . THERMAL SHUTDOWN ■ 0.5A DC CURRENT


    OCR Scan     		L6204 L6204 c1237 PDF

    scs thyristor

    Abstract: thyristor firing circuits scr firing gas ignition Thyristor 220V FLC02-200D lighter ignitor capacitor discharge ignition scr IDT Thailand Transistor k2 thyristor pin diagram
    Text: r z T SG S-TH O M SO N FLC02-200D rao œ o iL iieT rœ m ei Application Specific Discretes A.S.D. FIRE LIGHTER CIRCUIT FEATURES • SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION ■ DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION


    OCR Scan     		FLC02-200D FLC02 scs thyristor thyristor firing circuits scr firing gas ignition Thyristor 220V FLC02-200D lighter ignitor capacitor discharge ignition scr IDT Thailand Transistor k2 thyristor pin diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON STV7778 DEFLECTION PROCESSOR FOR MULTISYNC MONITOR HORIZONTAL • DUAL PLL CONCEPT ■ SELF-ADAPTIVE 30 TO 65kHz ■ X-RAY PROTECTION INPUT ■ DC ADJUSTABLE DUTY-CYCLE ■ INTERNAL 1st PLL LOCK/UNLOCK IDENTIFI­ CATION ■ WIDE RANGE DC CONTROLLED H-POSITION


    OCR Scan     		STV7778 65kHz) theSTV7778 D7H331 SDIP42 PDF

    C1237

    Abstract: LA 4972 c1237 ha MKT 10uf 63v L4970 L4972 L4972D S020 h89a ui35
    Text: 7=12^237 DD225MM 3 H T S 8 - ll- 3 > l L4972 L4972D S G S - T H O M S O N D O ^ O iK L d O I F lH lO lM D O i S G S-THOMSON 30E » 2A SWITCHING REGULATOR A D VA N C E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE


    OCR Scan     		L4972 L4972D 200KHz V/12V L4970. 33BpF L497B 330pF C1237 LA 4972 c1237 ha MKT 10uf 63v L4970 L4972D S020 h89a ui35 PDF

    L6234D

    Abstract: transistor ti p80 copper pcb l6234 AN467 AN668 AT25 L6234PD MO-166 Application Note AN467
    Text: SGS-THOMSON L6234 ;y THREE PHASE MOTOR DRIVER ADVANCE DATA SUPPLY VOLTAGE FROM 7 TO 52V 5A PEAK CURRENT Rds o n 0.3£2 TYP VALUE AT25°C CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVER OPERATING FREQUENCY TO 50KHz THERMAL SHUTDOWN INTRINSIC FAST FREE WHEELING DIODES


    OCR Scan     		L6234 50KHz L6234 7121S37 L6234D transistor ti p80 copper pcb AN467 AN668 AT25 L6234PD MO-166 Application Note AN467 PDF

    c1237 ha

    Abstract: No abstract text available
    Text: SGS-1H0 MS0 N M » ilL Iig T O [ l] < g S _ L 6 2 3 4 ^ 7/. THREE PHASE MOTOR DRIVER ADVANCE DATA SUPPLY VOLTAGE FROM 7 TO 52V 5A PEAK CURRENT Rds o n 0.3i2 TYP VALUE AT 25°C CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVER OPERATING FREQUENCY TO 50KHz


    OCR Scan     		50KHz L6234 L6234 c1237 ha PDF

    SD1487

    Abstract: No abstract text available
    Text: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO


    OCR Scan     		SD1487 SD1487 D070541 PDF

    L9824D

    Abstract: 4b2 zener diode DIP20 L9824 S020
    Text: ¿ 7 7 S G S -1H 0 M S 0 N ^ 7 # . R ilK g M ilL llg T r M K g L9824 OCTAL PARALLEL LOW SIDE DRIVER ADVANCE DATA • OPERATING DC SUPPLY VOLTAGE RANGE 5 V TO 25V ■ SUPPLY OVERVOLTAGE PULSE UP TO 40V ■ VERY LOW STANDBY QUIESCENT CUR­ RENT 100|xA ■ EIGHT BIT PARALLELSTRUCTURE WITH ME­


    OCR Scan     		L9824 350mA DIP20 DIP20) L9824D L9824 7T2T23? L9824D 4b2 zener diode S020 PDF

    F463 transistor

    Abstract: IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463
    Text: 7 ^ 2 3 7 QPS^SQTg SGS-THOMSON iL iO T * ! SGSF463 SGSIF463-SGSF563 S G S - T H O M S ON 3QE ]> FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH SWITCHING SPEED NPN POWER TRANSISTORS . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		02ci2Q? H33-I3 SGSF463 SGSIF463-SGSF563 70kHz ISOWATT218 500ms F463 transistor IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463 PDF

    L4925

    Abstract: No abstract text available
    Text: ¿ = 7 *7 t. S G S -T H O M S O N M M IIllLlig'B liM D Igi_ L4925 VERY LOW DROP VOLTAGE REGULATOR • OPERATING DC SUPPLY VOLTAGE RANGE 6VT028V ■ TRANSIENT SUPPLY VOLTAGE UP TO 40V ■ EXTREMELY LOW QUIESCENT CURRENT ■ HIGH PRECISION OUTPUT VOLTAGE


    OCR Scan     		L4925 6VT028V 500mA L4925 PowerS020 L4925PD PowerS020) Q0b77S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿ = 7 SG S-THO M SO N “ •/Ä., UA776 RäD g |[LI(gra©[fflD(gi PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS ■ MICROPOWER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ WIDE PROGRAMMING RANGE ■ HIGH SLEW RATE ■ SHORT-CIRCUIT PROTECTION


    OCR Scan     		UA776 UA776I UA776M UA776C UA776CN, UA776CD UA776 0G7bb23 PDF