HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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CMPT2222
Abstract: CMPT2222A CMPT2222AE X10-4
Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222AE
CMPT2222A
OT-23
150mA,
X10-4
CMPT2222
X10-4
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CMPT2222A
Abstract: C1P TRANSISTOR
Text: Central TM Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and
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CMPT2222A
CMPT2222A
OT-23
150mA,
x10-4
C1P TRANSISTOR
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C1P TRANSISTOR
Abstract: marking C1P CMPT2222A marking codes transistors sot-23 26 marking r4 diode on semiconductor marking code sot transistor marking c transistor c1p 4 npn transistor ic NPN transistors sot-23 26
Text: CMPT2222A NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching
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CMPT2222A
CMPT2222A
OT-23
150mA,
X10-4
C1P TRANSISTOR
marking C1P
marking codes transistors sot-23 26
marking r4 diode
on semiconductor marking code sot
transistor marking c
transistor c1p
4 npn transistor ic
NPN transistors sot-23 26
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C1P TRANSISTOR
Abstract: c1P sot marking C1P CMPT2222A transistor c1p X10-4
Text: CMPT2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general
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CMPT2222A
OT-23
150mA,
X10-4
C1P TRANSISTOR
c1P sot
marking C1P
CMPT2222A
transistor c1p
X10-4
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Untitled
Abstract: No abstract text available
Text: CMPT2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general
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CMPT2222A
OT-23
150mA,
X10-4
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CMPT2222A
Abstract: CMPT2222AE X10-4
Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface
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CMPT2222AE
CMPT2222A
OT-23
150mA,
X10-4
CMPT2222AE
X10-4
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Untitled
Abstract: No abstract text available
Text: CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface
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CMPT2222AE
CMPT2222A
OT-23
150mA,
X10-4
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CMPT2222
Abstract: CMPT2222A CMPT2222AE X10-4
Text: Central CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR ENHANCED SPECIFICATION MAXIMUM RATINGS: TA=25°C ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature
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CMPT2222AE
CMPT2222AE
CMPT2222A
OT-23
150mA,
X10-4
CMPT2222
X10-4
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K1P DIODES
Abstract: MMBT2222AQ-7-F K1P single transistor NPN K1P transistor marking 1p Z K1P SOT23
Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
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MMBT2222A
MMBT2907A)
AEC-Q101
J-STD-020
MIL-STD202,
DS30041
K1P DIODES
MMBT2222AQ-7-F
K1P single transistor
NPN K1P
transistor marking 1p Z
K1P SOT23
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"dummy load"
Abstract: C1005X5R0J105K C1005X5R1E104K C1608X5R0J106M C3216X5R1C106M C3216X7R1H105K MAX8784
Text: 19-0787; Rev 0; 3/07 MAX8784 Evaluation Kit The MAX8784 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thin-film transistor (TFT) liquid-crystal display (LCD) panels in
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MAX8784
MAX8784
"dummy load"
C1005X5R0J105K
C1005X5R1E104K
C1608X5R0J106M
C3216X5R1C106M
C3216X7R1H105K
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HIGH-VOLTAGE OPERATIONAL AMPLIFIER
Abstract: No abstract text available
Text: 19-0737; Rev 0; 1/07 KIT ATION EVALU E L B AVAILA Step-Up Regulator, Internal Charge Pumps, Switch Control, and Operational Amplifier for TFT LCDs The MAX8784 generates supply rails for the thin-film transistor TFT liquid-crystal display (LCD) panels in TVs
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MAX8784
HIGH-VOLTAGE OPERATIONAL AMPLIFIER
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C1005X5R0J105K
Abstract: C1608X5R0J106M C3216X5R1C106M CMS02 MAX8784 MMBD4148SE Diode, Dual Schottky, 30A, 45-V TFT TCON 4.5V TO 100V INPUT REGULATOR
Text: 19-0737; Rev 0; 1/07 KIT ATION EVALU E L B AVAILA Step-Up Regulator, Internal Charge Pumps, Switch Control, and Operational Amplifier for TFT LCDs The MAX8784 generates supply rails for the thin-film transistor TFT liquid-crystal display (LCD) panels in TVs
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MAX8784
C1005X5R0J105K
C1608X5R0J106M
C3216X5R1C106M
CMS02
MMBD4148SE
Diode, Dual Schottky, 30A, 45-V
TFT TCON
4.5V TO 100V INPUT REGULATOR
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diode FBL 030
Abstract: MMBD4148SE C1608X5R0J106M CMS02 MAX8753 MAX8753ETI diagram Converter 24v to 12v 3.3v dc-dc converter toshiba VOLTAGE REGULATOR MARKing c2n C1N27
Text: 19-3919; Rev 0; 1/06 KIT ATION EVALU E L B A AVAIL TFT LCD DC-DC Converter with Integrated Charge Pumps The MAX8753 quadruple-output DC-DC converter provides the regulated voltages required by active-matrix, thin-film transistor TFT , liquid-crystal displays (LCDs).
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MAX8753
300mA
diode FBL 030
MMBD4148SE
C1608X5R0J106M
CMS02
MAX8753ETI
diagram Converter 24v to 12v
3.3v dc-dc converter toshiba
VOLTAGE REGULATOR MARKing c2n
C1N27
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Untitled
Abstract: No abstract text available
Text: Central" CMPT2222AE Sem iconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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CMPT2222AE
CMPT2222A
OT-23
150mA,
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Untitled
Abstract: No abstract text available
Text: Central“ CMPT2222AE Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications,
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OCR Scan
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CMPT2222AE
CMPT2222A
OT-23
100mA,
150mA,
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C1P TRANSISTOR
Abstract: CMPT2222A LB-215
Text: Central Semiconductor Corp. CMPT2222A DESCRIPTION: NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal,
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CMPT2222A
OT-23
150it
150mA,
26-September
C1P TRANSISTOR
LB-215
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and
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OCR Scan
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T2222A
CMPT2222A
OT-23
150mA'
150mA,
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Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CMPT2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R C M P T2222Atype is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and
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CMPT2222A
OT-23
T2222Atype
150mA,
150mA
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CMPT2222A
Abstract: ja ctb
Text: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and
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OCR Scan
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CMPT2222A
OT-23
CMPT2222A
150mA,
ja ctb
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pt2222a
Abstract: MARKING code oJ sot23 PT2222
Text: TM C C M PT2222A e n t r a l Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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PT2222A
CMPT2222A
OT-23
pt2222a
MARKING code oJ sot23
PT2222
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Philips FA 291
Abstract: BUV28AF BUV28F
Text: PHILIPS INTERNATIONAL 45E D a 711002b DD31DTS 2 C1PHIN BUV28F BUV28AF T-33-W SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters,' inverters, switching regulators, motor control
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711002b
DD31DTS
BUV28F
BUV28AF
OT186
D0031100
T-33-n
Philips FA 291
BUV28AF
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V27AF
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control
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BUV27F
BUV27AF
OT186
OT186.
711GflBh
0G310TD
T-33-07
V27AF
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