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    TRANSISTOR C5122 Search Results

    TRANSISTOR C5122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    C5122 TRANSISTOR

    Abstract: C5122 2SC5122 transistor c5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MOD C5122 TRANSISTOR C5122 2SC5122 transistor c5122

    Untitled

    Abstract: No abstract text available
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MOD

    C5122 TRANSISTOR

    Abstract: transistor c5122 2SC5122 C5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 C5122 TRANSISTOR transistor c5122 2SC5122 C5122

    C5122 TRANSISTOR

    Abstract: C5122 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • • Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MODlled C5122 TRANSISTOR C5122 2SC5122

    C5122 TRANSISTOR

    Abstract: 2SC5122
    Text: 2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5122 O-92MOD C5122 TRANSISTOR 2SC5122

    calculation of line diSTANCE relay REL 670

    Abstract: siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100
    Text:  Measuring and monitoring relays CM and C5xx range 2 Content Benefits and advantages . 2/ 2 Monitoring features and application ranges . 2/ 4


    Original     		PDF F0206 F0b06 2CDC110004C0207 calculation of line diSTANCE relay REL 670 siemens EN 60947 VDE 0660 IEC 947 Siemens KTY 84 PTC UMC100-FBP pt1000 thermistor curve 1svr450071r0000 1SVR450065R0000 Siemens kty84 temperature sensor 1SVR430811R1300 1SAR477000R0100