marking 6d
Abstract: IPP147N12N
Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )*( K R - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB144N12N3
IPI147N12N3
IPP147N12N3
marking 6d
IPP147N12N
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marking 9D
Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )( K R - @ ?>2 I.) .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB06CN10N
IPI06CN10N
IPP06CN10N
8976BF6
marking 9D
sd marking 8H
PG-TO220-3
A6c DIODE
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IPP05CN10N
Abstract: No abstract text available
Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB05CN10N
IPI05CN10N
IPP05CN10N
8976BF6
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marking 6d
Abstract: IPD110N12N3 G
Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R U @ A6C2 E:?8 E6>A6C2 E
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IPD110N12N3
IPS110N12N3
8976BF6
marking 6d
IPD110N12N3 G
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IPP054NE8N
Abstract: FX23L-100S-0.5SV
Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB051NE8N
IPI05CNE8N
IPP054NE8N
8976BF6
FX23L-100S-0.5SV
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marking J6c
Abstract: marking 6C marking 09D marking 6c 7
Text: IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I 0- K R - @ ?>2 I.) 0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB08CNE8N
IPI08CNE8N
IPP08CNE8N
marking J6c
marking 6C
marking 09D
marking 6c 7
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marking 6d
Abstract: IPP04CN10N G diode 6e
Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB04CN10N
IPI04CN10N
IPP04CN10N
marking 6d
IPP04CN10N G
diode 6e
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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Untitled
Abstract: No abstract text available
Text: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays
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MAX17102
450mA
MAX17102
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IRGPC40F
Abstract: No abstract text available
Text: PD - 9.693A IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V
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IRGPC40F
10kHz)
O-247AC
IRGPC40F
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IRGPC40F
Abstract: mosfet 600V 7A N-CHANNEL TO
Text: Previous Datasheet Index Next Data Sheet PD - 9.693A IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC40F
10kHz)
O-247AC
IRGPC40F
mosfet 600V 7A N-CHANNEL TO
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MAX17119EVKIT
Abstract: max17119E Q1/C84-8
Text: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),
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MAX17119
MAX17119
10-channel,
MAX17119EVKIT
max17119E
Q1/C84-8
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AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
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marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
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smd transistor yc
Abstract: transistor SMD yc smd tr yc AN-994 D-12 IRGBC20K-S SMD-220 C858 c856
Text: Previous Datasheet Index Next Data Sheet PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC20K-S
SMD-220
C-860
smd transistor yc
transistor SMD yc
smd tr yc
AN-994
D-12
IRGBC20K-S
SMD-220
C858
c856
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: International HjgRectifter PD - 9.693A IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC40F
10kHz)
O-247AC
5S452
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TRANSISTOR C86
Abstract: No abstract text available
Text: -âdlitron Devices, Inc « © y © ? © Äüm VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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250mm
203mm)
350pF
350pF
SDT02353.
SDT02354,
TIP528
TRANSISTOR C86
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TRANSISTOR C86
Abstract: No abstract text available
Text: .Ætttron [^ © yj©!! ©ÄTFÄd© Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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250mm
l-62mm
203mm)
350pF
350pF
SDT02353,
SDT02354.
TIP528
TRANSISTOR C86
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transistor smd MJ 145
Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858
Text: P D - 9.1130 International [iÖR1Rectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features 10 • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating inciudes all "tail* losses • Optimized for high operating frequency over 5kHz
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IRGBC20K-S
SMD-220
C-860
transistor smd MJ 145
g10 smd transistor
transistor smd bh
SMD Transistor 502
c858
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Untitled
Abstract: No abstract text available
Text: P D - 9.1132 bitemational [ÎQR 1Rectifier IRGBC30K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz
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IRGBC30K-S
IRQBC30K-S
SMD-220
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Untitled
Abstract: No abstract text available
Text: P D - 9.1130 International ^R ectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c r • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGBC20K-S
C-859
S54S5
SMD-220
C-860
465S4S2
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C869
Abstract: transistor C870 irectifier c872
Text: P D - 9.1134 kitemational IÎÔRIRectifier IRGBC40K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-ioss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz
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IRGBC40K-S
SMD-220
C-872
C869
transistor C870
irectifier
c872
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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