MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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IPW65R660CFD
Abstract: ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.1, 2011-06-22 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD
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IPx65R660CFD
IPD65R660CFD
IPB65R660CFD,
IPP65R660CFD
IPA65R660CFD
IPW65R660CFD
ipa65r
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TRANSISTOR SMD MARKING CODE 604
Abstract: 65F660 MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor M3 smd diode marking B3 MOSFET TRANSISTOR SMD MARKING A1 ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD
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IPx65R660CFD
IPD65R660CFD
IPB65R660CFD,
IPP65R660CFD
IPA65R660CFD
TRANSISTOR SMD MARKING CODE 604
65F660
MOSFET TRANSISTOR SMD MARKING CODE A1
smd transistor M3
smd diode marking B3
MOSFET TRANSISTOR SMD MARKING A1
ipa65r
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65F6080
Abstract: ipw65r080
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
ipw65r080
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65F6080
Abstract: ipw65r080 IPW65R080CFD 65F608 coolmos cfd ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R080CFD
65F6080
ipw65r080
IPW65R080CFD
65F608
coolmos cfd
ipw65r
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65F6080
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor 1 IPW65R080CFD Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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65F6080
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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cfl lighting dc 1.5v
Abstract: ST13005N
Text: ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMP CFL
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ST13005N
O-220
cfl lighting dc 1.5v
ST13005N
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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M57950L
Abstract: 10 100 1000 base T Transformer module m57950l 01r QM50DY HL 100 Transistor
Text: MITSUBISHI HYBRID ICs M57950L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57950L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due
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M57950L
M57950L
QM30DY,
QM50DY,
10-pin
29MAX.
20MAX.
2500Vrms
1/2QM50DY
10 100 1000 base T Transformer module
m57950l 01r
QM50DY
HL 100 Transistor
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cfl lighting dc 1.5v
Abstract: ST13005N
Text: ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ COMPACT FLUORESCENT LAMP CFL
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ST13005N
O-220
cfl lighting dc 1.5v
ST13005N
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transistor BUJ100
Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V
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BUJ100
transistor BUJ100
cfl circuits
cfl Self-Oscillating
Philips cfl
buj100 equivalent
BALLAST low loss philips
buj100 transistor
BEP transistor
cfl circuit
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CF001-03
Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate
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CF001-03
CF001-03
MIL-STD-750
CF001-03-000X
CFA0103A
low noise x band hemt transistor
cfb0103
CFB0103-B
CFB0103B
CFS0103-SB
CFA0103-A
Mimix Broadband
CF001
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NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2SC3604
2SC3604
15obots
NEC K 2500
N transistor NEC K 2500
2SC1223
transistor marking S00
2SC2367
NEC marking b
NEC PART NUMBER MARKING
2SC3603
2SC2150
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transistor NEC D 586
Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise
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2SC3587
2SC3587
transistor NEC D 586
nec a 634
NEC D 586
NEC K 2500
NEC 3500
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transistor BR A 94
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114TE
DTC114TE
transistor BR A 94
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BLV21
Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
Text: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran
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711002b
BLV21
OT-123.
7Z68949
BLV21
transistor L6
Sss-5
2222 123 capacitor philips
B20-4
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BSD12
Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.
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BSD12
7Z907
a03ST0t.
BSD12
depletion MOSFET
Mosfet n-channel switching transistor
N-Channel depletion mos
gbs transistor
free transistor
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BUK427-400A
Abstract: BUK427-400B UNC20
Text: N AMER □ □ 2 0 2 bS 4 SSE D PHILIPS/DISCRETE PowerMOS transistor BUK427-400A BUK427-400B r-rh }} GENERAL DESCRIPTION SYMBOL Cfl G > N-channef enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
UNC20
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BUK446
Abstract: BUK446-1000A BUK446-1000B bu 508
Text: N AMER PHILIPS/DISCRETE 2SE D bbS3 1 3 1 Q02042S 0 WÊ PowerMOS transistor BUK446-1000A BUK446-1000B r - 3 cf ‘ 0 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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T-37-Ã
BUK446
-1000A
-1000B
BUK446-1000A
BUK446-1000B
bu 508
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Untitled
Abstract: No abstract text available
Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .
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MAT-03
DAC-08,
992mA
992rnA,
008mA
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MMBA812M5
Abstract: MMBT5086
Text: SAMSUNG SEM ICO N D U CT O R . IN C MMBA812M5 l^ E D J 7^4142 00G7234 S | PNP EPITAXIAL SILICON TRANSISTOR ast-cft T - GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage
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MMBA812M5
MMBT5086
OT-23
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