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    TRANSISTOR COMPARABLE TYPES Search Results

    TRANSISTOR COMPARABLE TYPES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COMPARABLE TYPES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7373

    Abstract: JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004
    Text: Spring/Summer 1998 Bipolar Transistors by Carlton B. Mowry, Microsemi PPC, Inc., [email protected] Bipolar transistors have been used in Although only a few space applications for years. There is a examples have been history of device types that are furnished, there are many


    Original     		PDF O-254 O-254 1x105 O-254, 2N7373 JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004

    mosfet to ignition coil

    Abstract: scr speed control dc motor thyristor drive dc motor speed control AN7332 CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer
    Text: Harris Semiconductor No. AN7332.1 Harris Power MOSFETs May 1992 The Application Of Conductivity-Modulated Field-Effect Transistors Author: Jack Wojslawowicz Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer


    Original     		PDF AN7332 ED-31 CR17-20 CR9-12 mosfet to ignition coil scr speed control dc motor thyristor drive dc motor speed control CR8 thyristor equivalent thyristor motor speed control circuit thyristor family scr driver dc motor speed control mosfet structure Ignition Transformer

    BLV101A

    Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.


    Original     		PDF SC08b LLE18010X LLE18040X LLE18150X BGY1816 LFE18500X BLV101A BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99

    AN7332

    Abstract: thyristor family Ignition Transformer automotive thyristor intersil ignition mosfet structure
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement


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    mosfet to ignition coil

    Abstract: 12v DC motor speed control using scr AN-7503 Ignition Transformer dc motor speed control using scr driver ge motors ac 110v DC motor speed control circuit with SCR thyristor family speed control of dc motor using scr
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary bt he pliion nctivodued ldect antors utho eyrds terrpoon, minctor, er ) OCI O frk ge- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer


    Original     		PDF

    mosfet 7503

    Abstract: mosfet to ignition coil AN-7503 Ignition Transformer AN75 output characteristic of SCR GTO
    Text: The Application Of Conductivity-Modulated Field-Effect Transistors Application Note Summary Cretor DOCI FO dfark Page- The development of conductivity-modulated field-effect transistors, FETs, makes available to the system designer another solid-state device that can be used to implement


    Original     		PDF

    SS14 SOD123

    Abstract: SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection
    Text: AN10393 BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors Rev. 01.00 — 01 September 2005 Application note Document information Info Content Keywords BISS transistor, MEGA Schottky rectifier, DC/DC converter, Loadswitch,


    Original     		PDF AN10393 PBSS4240V, PBSS4350T, PBSS4320T, PMEG2010AEJ, PMEG1020EJ, PMEG6010AED, OD323F, OT666 SS14 SOD123 SS14 DIODE schottky SS14 DIODE dc-dc DC SS14 diode Silicon Schottky Diode sod123 SMA-DIODE SOD523 footprint SS14 DIODE AN1039 high power bipolar transistor selection

    mosfet equivalent

    Abstract: selection criteria of bipolar transistor totempole driver resonant converter
    Text: FEATURE ARTICLE Applications Dictate Bipolar or MOSFET Power Switch Choices Despite huge investments in MOSFET technologies over recent years, bipolar transistors have continued to be developed to rival or exceed MOSFET performance in many applications. It's therefore important


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    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    a02 Transistor rf

    Abstract: RF transistors with s-parameters stripline power combiner splitter transistor RF S-parameters Hall Siemens high power transistor s-parameters HPIB CONTROLLER RF Transistor s-parameter TRANSISTOR noise figure measurements application Transistor SP-30
    Text: Application Note No. 008 Discrete & RF Semiconductors G. Lohninger L. Musiol Measure 3 Types of Parameter and You’ll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation With the increasing need to reduce development time, RF Designers are


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    car airbag

    Abstract: mosfet firing circuit 62726 Si4410 gate firing of d.c drive depletion 60V power mosfet MOS Controlled Thyristor trench power mosfet bv27 mosfet triggering circuit
    Text: Complementary Trench Power MOSFETs Define New Levels of Performance Richard K. Williams, King Owyang, Hamza Yilmaz, Mike Chang, and Wayne Grabowski Introduction The vertical power MOSFET has become the preeminent switching device in modern power semiconductors, in part due to its capacity for low


    Original     		PDF

    stripline power combiner splitter

    Abstract: RF transistors with s-parameters HP6626 transistor RF S-parameters AN008 HPIB CONTROLLER 8970B
    Text: Application Note No. 008 Discrete & RF Semiconductors G. Lohninger L. Musiol Measure 3 Types of Parameter and You'll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation With the increasing need to reduce development time, RF Designers are


    Original     		PDF

    IPA50R500CE

    Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
    Text: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02


    Original     		PDF ED-29, IPA50R500CE DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C

    SIPMOS

    Abstract: smd transistors list smd transistor equivalent table Small Signal MOSFETs BSP 220 equivalent Transistor comparable types smd transistors
    Text: Small Size, High Performance: Switching with Modern SIPMOS Small-Signal Transistors According to conventional definitions, the limit values given in data sheets are absolute figures in their own right. If they are exceeded, destruction of the component or sustained


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    S7201

    Abstract: D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701
    Text: SuperFlash EEPROM Technology Technical Paper November 2001 SuperFlash EEPROM Technology INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The SuperFlash technology and memory cell have a number of important


    Original     		PDF S72019-00-000 S7201 D701 EEPROM cross NAND read disturb SST superflash picture of d701 TRansistor 701

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


    Original     		PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier

    CR10

    Abstract: No abstract text available
    Text: SuperFlash EEPROM Technology Technical Paper 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The


    Original     		PDF

    transistor c1c

    Abstract: floating-gate injector CR10
    Text: SuperFlash EEPROM Technology Technical Paper Revised March 1999 1.0 INTRODUCTION The following paper describes the patented and proprietary Silicon Storage Technology, Inc. SST CMOS SuperFlash EEPROM technology and the SST field enhancing tunneling injector split-gate memory cell. The


    Original     		PDF

    NBB-500

    Abstract: NDA-412 AN0013 NBB300 NBB-300 NBB-302 NBB-400 NBB-502 NDA-212 NDA-312
    Text: AN0013 15 AN0013 NBB Series and NDA Series Reliability NBB Series and NDA Series Reliability This application note provides additional information on component reliability with varying device junction temperature, and the effect of the package used on junction temperature. This information is provided for the NBB Series HBT Broadband Feedback Amplifiers and NDA Series HBT Distributed Amplifiers.


    Original     		PDF AN0013 NBB-500 NDA-412 AN0013 NBB300 NBB-300 NBB-302 NBB-400 NBB-502 NDA-212 NDA-312

    geiger apd

    Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector
    Text: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5


    Original     		PDF MIL-STD-750, 1x10-8 geiger apd SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector

    IXAN0039

    Abstract: New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A D-86161 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode
    Text: IXAN0039 A new generation of 600V GaAs Schottky diodes for high power density PFC applications Stefan Steinhoff1, Manfred Reddig2 and Steffen Knigge3 1 IXYS Berlin GmbH, Max-Planck-Strasse 5, D-12489 Berlin, Germany; [email protected] 2 Institute of Power Electronics, Dept. of Electrical Engineering of University of Applied Sciences,


    Original     		PDF IXAN0039 D-12489 D-86161 IXAN0039 New Generation of 600V GaAs Schottky Diodes for High Power Density PFC Applications Schottky diode TO220 diode schottky 600v MOSFET and parallel Schottky diode schottky diode 100A 300V dc dc boost converter Diode schottky 29 schematic with a schottky diode

    2n2222 npn transistor footprint

    Abstract: 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2N2222 2n2222 sot323 JAPANESE TRANSISTOR 2SC
    Text: Discrete Product Lines Understanding D evice Prefixes Off-the-shelf surface mount products include most popular small-signal U. S., European and Asian types. Most U. S. standard Motorola SOT-23 devices will have a common alpha prefix, “MMB,” a fourth alpha character which


    OCR Scan     		PDF OT-23 2N2222 MMBT2222. OT-143 2n2222 npn transistor footprint 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2n2222 sot323 JAPANESE TRANSISTOR 2SC

    transistor D1133 EQUIVALENT number

    Abstract: D1133 transistor D1133 EQUIVALENT CIRCUIT TTL 74-series IC LIST D1133 transistor IC 7493n and pin diagram of IC 7491 transistor D1133 TTL 74-series IC Inverter Gates
    Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7442N 7450N 7451N 7453N Mullard types Type No. Mullard types FJH131 FJH231 FJH311


    OCR Scan     		PDF 7400N 7401N 7402N 7403N 7403AN 7404N 7405N 7405AN 7420N 7430N transistor D1133 EQUIVALENT number D1133 transistor D1133 EQUIVALENT CIRCUIT TTL 74-series IC LIST D1133 transistor IC 7493n and pin diagram of IC 7491 transistor D1133 TTL 74-series IC Inverter Gates

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300