Untitled
Abstract: No abstract text available
Text: Click on Series name for product info on aimtec.com Series AMLDP-Z Up to 1000mA | LED Driver FEATURES: • • • • Models Single output Model Input Voltage V AMLDP-1630Z AMLDP-1635Z AMLDP-1650Z AMLDP-1660Z AMLDP-1670Z AMLDP-16100Z 7-16 7-16 7-16 7-16
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1000mA
AMLDP-1630Z
AMLDP-1635Z
AMLDP-1650Z
AMLDP-1660Z
AMLDP-1670Z
AMLDP-16100Z
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance
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BLF8G09LS-400PW;
BLF8G09LS-400PGW
BLF8G09LS-400PW
8G09LS-400PGW
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.
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BLF8G09LS-400PW;
BLF8G09LS-400PGW
BLF8G09LS-400PW
8G09LS-400PGW
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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BLF8G09LS-270W;
BLF8G09LS-270GW
BLF8G09LS-270W
8G09LS-270GW
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0
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MMPQ3467
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Untitled
Abstract: No abstract text available
Text: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
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AOC2800
AOC2800
716EF
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Untitled
Abstract: No abstract text available
Text: AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2802 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
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AOC2802
AOC2802
716EF
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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BLF8G09LS-270W;
BLF8G09LS-270GW
BLF8G09LS-270W
8G09LS-270GW
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MAX749CPA
Abstract: No abstract text available
Text: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digit a lly Adjust a ble LCD Bia s Supply _Applic a t ions Notebook Computers _Fe a t ure s ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:
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MAX749CPA
MAX749CSA
1-0043A
101mm
004in.
1-0041A
MAX749CPA
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ztx750 equivalent
Abstract: DAC IC 0808 749 MOSFET TRANSISTOR motorola SMD10P05L DAC ic 0808 pin diagram MAX749CPA dac IC 0808 circuit diagram MAX749 MAX749CSA MAX749EPA
Text: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digitally Adjustable LCD Bias Supply _Applications Notebook Computers _Features ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:
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MAX749CPA
MAX749CSA
MAX749C/D
1-0043A
101mm
004in.
1-0041A
ztx750 equivalent
DAC IC 0808
749 MOSFET TRANSISTOR motorola
SMD10P05L
DAC ic 0808 pin diagram
MAX749CPA
dac IC 0808 circuit diagram
MAX749
MAX749CSA
MAX749EPA
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MAX715CWG
Abstract: MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 MAX716EVKIT TO-213
Text: 19-4507; Rev. 1 ;3 /9 2 / l/ l/ J X I/ l/ l B attery-P ow ered Supply System s G e n e ra l D e s c rip tio n F e a tu re s ♦ Four Logic-Controlled +5V Regulators The MAX716 com bines circuitry for four low-dropout linear
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MAX714/715/716
MAX716
InpuMAX716C/D
MAX716EPI
MAX716EWI
MAX716MJI
MAX716EVKIT
MAX715CWG
MAX714
motorola transistor 2N2907A
Bt 35 transistor
Bt 35 F transistor
HX749
coil 2n2222a
MAX715
TO-213
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2N2222A zetex
Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Text: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down
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MAX714/715/716
MAX716
inpu40Â
MAX716MJI
MAX716EVKIT
2N2222A zetex
MAX715CNG
motorola b6n
MAX714
MAX715CWG
MAX716CWI
MAX716EWI
MAX714CPE
MAX714CWE
MAX715
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TRANSISTOR BC 206 PNP
Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V
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MDC03
TRANSISTOR BC 206 PNP
Transistor BhD
Transistor BhD 15
bc 201 transistor
A 1908 transistor
SA 5881
eltec
R/transistor bc 813
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transistor bc 577
Abstract: transistor bc 103
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
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Q62702-2372
OT-363
flE35bDS
BC847S
EHP00365
fl235b05
transistor bc 577
transistor bc 103
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2TX749
Abstract: 2N2222A zetex MAX715CWG E4QN 10P05L
Text: 19-4507; Rev. 1;3/92 v V M X I / l / l B attery-P ow ered Supply System s The MAX716 com bines circuitry for four low-dropout linear regulators, three DC-DC switching regulators, and powersupervisory functions on a single IC. All but one regulator output is logic controlled so that loads may be shut down
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AX714/715/716
MAX716
MAX716EVKIT
2TX749
2N2222A zetex
MAX715CWG
E4QN
10P05L
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transistor RJH 30
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM75TX-HB • lc • Vcex • hFE Collector current. 75A Collector-emitter voltage. 600V DC current gain. 750
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QM75TX-HB
E80276
E80271
11-M4
transistor RJH 30
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1N06CLE
Abstract: zener diode 9CA transistor D 716
Text: a RLP1N06CLE h a r r is January 1994 Voltage-Clamping Current-Limited ESD-Protected N~Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 1A, 55V r DS O N . . 0.75Ì1 • 'L im it.
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RLP1N06CLE
150OC
RLP1N06CLE
1N06CLE
zener diode 9CA
transistor D 716
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749 MOSFET TRANSISTOR motorola
Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly
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MAX749
-100V
500kHz)
1178mm)
749 MOSFET TRANSISTOR motorola
749PC
GE DC 300 ADJUSTABLE SPEED DRIVE
4151d
MAX749CA
MAX749EA
zetex 749
MAX749CPA
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749 MOSFET TRANSISTOR motorola
Abstract: MAX749CPA
Text: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly
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MAX749
-100V
500kHz)
1178m
2032m
749 MOSFET TRANSISTOR motorola
MAX749CPA
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transistor D 716
Abstract: S10007
Text: D iffused Junction S ilicon Type FEATURES • • • • V O LT A G E C U R R EN T C H A R A C T E R IS T IC S Universal standard, replacos many different part numbers. Diffused junction type In molded epoxy resin. N onpolarized. High reliability for com m unication use.
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H--11--
transistor D 716
S10007
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HA20
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode FREDFET Type ^ DS Id ^D S o n BUZ 382 400 V 12.5 A 0.4 i i M axim um Ratings Parameter - Continuous drain current, Tc = 30 "C Pulsed drain current. Tc = 25 C Drain-source voltage
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O-218
C67078-A3207-A2
HA20
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BSS52
Abstract: BSS51 BSS50
Text: Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51 ; BSS52 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2 base 3 collector, connected to case DESCRIPTION
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BSS61
BSS62.
BSS50;
BSS51
BSS52
BSS50
BSS51
BSS52
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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stetron
Abstract: No abstract text available
Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode
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VT60D\SICVAR
SDL-080-131
SDL-098-231
100mA:
stetron
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