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    TRANSISTOR D 718 Search Results

    TRANSISTOR D 718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A 120MHz CA3146A) an5296 CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN

    jfs series

    Abstract: lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5
    Text: INSTRUCTION MANUAL JFS0500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 LAMBDA ELECTRONICS INCOPORATED 3055 DEL SOL BOULEVARD , SAN DIEGO , CA 92154-3474 • TEL: 619-575-4400 • FAX: 619-575-7185 IMJFS05 – REV D


    Original     		PDF JFS0500 IMJFS05 JFS0500: jfs series lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5

    BUX20

    Abstract: bux 716 transistor BUX
    Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection


    OCR Scan     		PDF BUX20 CB-159 BUX20 bux 716 transistor BUX

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    bux21

    Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
    Text: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t


    OCR Scan     		PDF CB-159 bux21 emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance

    2N2297

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 □□eaD'U 2=56 2N 2297 ;v SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. QUICK REFERENCE DATA v CBO max. 80 V Collector-emitter voltage open base


    OCR Scan     		PDF bbS3T31 2N2297

    2N2297

    Abstract: LB 124 transistor
    Text: N AMER PHILIPS/DISCRETE t.'ìE ]> m □□200^1 2=50 2N2297 I SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended fo r large signal h.f. and v.h.f. am plifier applications. Q UICK REFERENCE D A T A Collector-base voltage open em itter v CBO max.


    OCR Scan     		PDF S3T31 2N2297 2N2297 LB 124 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    BUX40

    Abstract: No abstract text available
    Text: rz 7 ^ 7 # SCS-THOMSON it m D ÏÏM K S B U X 40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX40 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military e


    OCR Scan     		PDF BUX40 120ration

    2SC 968 NPN Transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5007 2SC 968 NPN Transistor

    Transistor BFR 96

    Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
    Text: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar


    OCR Scan     		PDF fl235bD QQQMb70 BFR34A 2N6620. Q62702-F346-S1 Q68000-A4668 0Q0Mb73 Transistor BFR 96 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99

    CA3600E

    Abstract: RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual
    Text: G E SOLID STATE D I D È I 3Ô7SDÛ1 0G14ti57 i | ^ ^ 3 ^ 3 :_ Arrays CA3600 CM O S Transistor Array For Linear Circuit Applications Features: • High in p u t resistance.1 0 0 G f i t y p .


    OCR Scan     		PDF CA3600 CA3600E RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual

    MRD300

    Abstract: 716 Motorola MRD310 light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor
    Text: ROLA SC D I O D E S / O P T O L4E T> b 3 b ? Z 5 5 OOflb77b TIT • MOT? MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RD300 M R D 310* P h o to D e te c to rs Transistor Output •Motorola Preferred Device The MRD300 and MRD310 are designed fo r applications re qu irin g radiation sensitivity


    OCR Scan     		PDF b3b72SS MRD300 MRD310 MRD300) b3t72ss MRD300, MRD310 716 Motorola light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor

    2N2297

    Abstract: transistor 2N2297 transistor w 431
    Text: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF 2N2297 711002b 00425T4 D04S5 2N2297 transistor 2N2297 transistor w 431

    2SK2235

    Abstract: DDS3400 44t transistor DDS34
    Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF DDS3400 2SK2235 300juA 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 44t transistor DDS34

    smd transistor 718

    Abstract: 42AL bss 97 transistor
    Text: SIEMENS B U Z 102A L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL VÒS 50 V b 42 A


    OCR Scan     		PDF O-220 102AL C67078-S1356-A2 smd transistor 718 42AL bss 97 transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK1357 00232flb 20kfi) 0023b43 O-220SM Q023b44

    2SK2089

    Abstract: 00E3b D0233
    Text: C1DC]72SG TOSHIBA D0233bf l TO SHIBA FIELD EFFECT TRANSISTOR 130 2SK2089 SILICON N CHANNEL M OS TYPE tt-M O SII.5 2SK2089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S TO-22QFL CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE


    OCR Scan     		PDF D0233bfl 2SK2089 T0-220FL 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 00E3b D0233

    Untitled

    Abstract: No abstract text available
    Text: h ’7 > y X ^ / T ransistors 2SD1943 2SD1943 NPN '> • ; = ! > i£ J i> J t ^ ± illiffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor h FE V 'm i' Vr>4 V 'A ''J| "r • ^JB 'ri'iilS /D im en sio ns Unit: mm 1) 4. 5 ± 0 . 2 : h FE =


    OCR Scan     		PDF 2SD1943

    2SK2222

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2222 «Î0T7250 00233Û1 b74 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt-M O SII 5 2SK2222 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE


    OCR Scan     		PDF 0T7E50 2SK2222 300/iA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM TDT725Q

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .


    OCR Scan     		PDF FCX718