2SK2477
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88 D1026
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2477 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
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2SK2477
2SK2477
IEI-1213
MEI-1202
MF-1134
MP-88
D1026
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2SK2476
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
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2SK2476
2SK2476
O-220
IEI-1213
MEI-1202
MF-1134
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D1026
Abstract: 2SK2477 MP-88 2SK24
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 1.0 Ω MAX. (VGS = 10 V, ID = 5.0 A)
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2SK2477
2SK2477
D1026
MP-88
2SK24
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2SK2476
Abstract: IEI-1213 MEI-1202 MF-1134
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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ultrasound transducer circuit driver
Abstract: MD1811 MD1811K6-G MO-220 TC6320 D1026
Text: Supertex inc. MD1811 High Speed Quad MOSFET Driver General Description Features ► ► ► ► ► ► ► ► ► ► ► The Supertex MD1811 is a high speed, quad MOSFET driver designed to drive high voltage P and N-channel MOSFETs for medical ultrasound applications and other applications requiring a
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MD1811
MD1811
DSFP-MD1811
D102610
ultrasound transducer circuit driver
MD1811K6-G
MO-220
TC6320
D1026
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD1811 High Speed Quad MOSFET Driver Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► General Description 6.0ns rise and fall time 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible 5.0 to 12V total supply voltage
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MD1811
MD1811
DSFP-MD1811
D102610
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2SK2477
Abstract: D1026 MP-88
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DVP-40EH
Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.
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113-API
API156
296-API
DVP-40EH
DVP-10SX
DVP28SV11R2
DVP-32EH
DVP14Ec
DVP80EH00R3
DVP40es
DVP-14SS
DVP-08SN
DVP64EH00R3
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Untitled
Abstract: No abstract text available
Text: Fractional-N/Integer-N PLL Synthesizer ADF4151 Data Sheet FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer RF bandwidth to 3.5 GHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Separate charge pump supply VP allows extended tuning
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ADF4151
ADF4151
ADF4350.
CP-32-7)
ADF4151BCPZ
ADF4151BCPZ-RL7
EVAL-ADF4151EB1Z
32-Lead
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Untitled
Abstract: No abstract text available
Text: Fractional-N/Integer-N PLL Synthesizer ADF4151 Data Sheet FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer RF bandwidth to 3.5 GHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Separate charge pump supply VP allows extended tuning
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ADF4151
ADF4151
ADF4350.
CP-32-7)
ADF4151BCPZ
ADF4151BCPZ-RL7
EVAL-ADF4151EB1Z
32-Lead
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Untitled
Abstract: No abstract text available
Text: Fractional-N/Integer-N PLL Synthesizer ADF4151 Data Sheet FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer RF bandwidth to 3.5 GHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Separate charge pump supply VP allows extended tuning
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ADF4151
ADF4151
CP-32-7)
ADF4151BCPZ
ADF4151BCPZ-RL7
EVAL-ADF4151EB1Z
32-Lead
CP-32-7
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transistor D2058
Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
Text: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY. AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do
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C2000
transistor D2058
K D2058 Y
transistor D2041
D2058 transistor
transistor K D2059
D2061 transistor
KPC-CC01
d2058
D2061
Transistor D2010
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potenciometro 100k lineal
Abstract: Linear Potentiometer 50k transformador chopper descargar vfd037e43a VFD015E43T VFD037E23A VFD075E43A como se mide un diodo transistor de induccion estatica
Text: Prefacio Gracias por elegir la Serie de alto rendimiento VFD-E de DELTA. La Serie VFD-E se fabrica con componentes y materiales de alta calidad e incorpora la más moderna tecnología disponible en microprocesadores. Se debe usar este manual para instalación, ajuste de parámetros, solución de problemas y
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10/CTL
X0XX1111
X0XX0000
X0XX1000
X1XX0000
0XXXX110
0XXXX01X
X01X0001
0XXXX111
potenciometro 100k lineal
Linear Potentiometer 50k
transformador chopper
descargar
vfd037e43a
VFD015E43T
VFD037E23A
VFD075E43A
como se mide un diodo
transistor de induccion estatica
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WPLSoft user manual
Abstract: VFD015E43T VFD007E21T VFD007E43T submersible motor winding formula VFD004E21T VFD015E43A manual VFD007E21A delta vfd-e with modbus communication vfd037e43a
Text: Preface Thank you for choosing DELTA’s high-performance VFD-E Series. The VFD-E Series is manufactured with high-quality components and materials and incorporate the latest microprocessor technology available. This manual is to be used for the installation, parameter setting, troubleshooting, and daily
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14/CTL
X0XX1111
X0XX0000
X0XX1000
X1XX0000
0XXXX110
0XXXX01X
X01X0001
0XXXX111
WPLSoft user manual
VFD015E43T
VFD007E21T
VFD007E43T
submersible motor winding formula
VFD004E21T
VFD015E43A manual
VFD007E21A
delta vfd-e with modbus communication
vfd037e43a
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2476 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.
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2SK2476
2SK2476
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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