transistor d412
Abstract: No abstract text available
Text: XL-25 with Li-98 Ceramic Heat Spreader with Thermal Tape XL-25 Features Large contact area Low weight High breakdown voltage Excellent heat spreader Custom shapes possible Applications LED / Notebook PC / M/B / Power Transistor / Power Module / CPU / Chip IC
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XL-25
Li-98
Li98C
20x20xt2
XL-25
transistor d412
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M61511FP
Abstract: 80P6N 2427D N675 D44 8PIN
Text: MITSUBISHI SOUND PROCESSORS M61511FP AUDIO SIGNAL PROCESSOR 6ch Electric Volume with 10 Input Selector APPLICATION AV Amp, Receiver, Mini Compo etc. FEATURE • 6ch Independent Electric Volume with High Voltage Transistor 97 Step ; 0~-95dB/1dB Step, -∞ , Maximum Input Voltage 4Vrms
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M61511FP
-95dB/1dB
0/6/12dB)
80P6N
M61511FP
80P6N
2427D
N675
D44 8PIN
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9
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OT-23-3L
OT-23-3L
2SD780/2SD780A
2SD780
2SD780A
300mA
300mA,
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transistor D55
Abstract: 2SD780 d54 marking 2SD780A marking D53 2SD78 TRANSISTOR D54 D51 marking
Text: 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.3 A Collector-base voltage 60 V 2SD780 V(BR)CBO: 80
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2SD780/2SD780A
OT-23-3L
2SD780
2SD780A
300mA
300mA,
transistor D55
2SD780
d54 marking
2SD780A
marking D53
2SD78
TRANSISTOR D54
D51 marking
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PDF
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55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
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IPB036N12N3
65AE5
55B5
IPB036N12N
marking eb5
Diode 9H
diode 1D
marking G9
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IPB025
Abstract: IPB025N08N3 G
Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD
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IPB025N08N3
IPB025
IPB025N08N3 G
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diac d83
Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
Text: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example
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FX3U-48M
Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)
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D-40880
168590-E
FX3U-48M
FX3U-32M
a6tbxy36
FX3U-64M
FX2N 64mr manual
FX3U-80M
pid temprature controller
FX2N-16EX
JY997D16901
FX3U-128M
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BUF600X1
Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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KD421K10
Abstract: No abstract text available
Text: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power
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KD421K10_
Amperes/1000
EIC20-
KD421K10
KD421K10
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PDF
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transistor D55
Abstract: No abstract text available
Text: m m oEK Powerex, Inc., 200 Hfflis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K10 Dual Darlington Transistor Module 100 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature
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KD421K10
Amperes/1000
transistor D55
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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2SD780
Abstract: 7802S
Text: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe in m illim eters 2 .8 + 0 2
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2SD780
2SD780A
2S0780,
2SD780A
2SB736,
2SB736A
Diss50
--84M
7802S
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)
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OT-89)
BCX53
I70CP-C0LLECT0R
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KC224575
Abstract: KT224515 KT224510 KC224503 pj 1339 KC-224575 KC324510 KR224505 ke721k03 KR224503
Text: m N E R E X Powerex, Inc., 200 Hillis St reet, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42t Avenue Ci Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Powerex Darlington Transistor Modules are in wide use in inverter and power supply circuits. The last
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BP107,
KET24505HB
KE921205HB
KET24575HB
KET24510HB
KC224575
KT224515
KT224510
KC224503
pj 1339
KC-224575
KC324510
KR224505
ke721k03
KR224503
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transistor b54
Abstract: b54 marking
Text: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at
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OT-89)
BCX53
BCX56,
170CP-C0LLECT0R
transistor b54
b54 marking
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Untitled
Abstract: No abstract text available
Text: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown
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OT-89)
BCX56
BCX53,
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2SD780
Abstract: d53 pnp transistor marking D53 MARKING D53 5L 2SD780A 1264B J22686
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S D 7 8 0 .2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD780, 2SD780A are designed for use in small type equipments espe in millimeters
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2SD780,
2SD780A
2SD780A
2SB736,
2SB736A
2SD780
J22686
--84M
d53 pnp transistor
marking D53
MARKING D53 5L
1264B
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PDF
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transistor c37
Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22
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OT-23)
OT-323)
OT-89)
2N2925
2N3703
2N3704
2N3706
2N3711
2N3860
2N3903
transistor c37
a38 TRANSISTOR
2N3904 A38
2N3904 A31
TRANSISTOR a32
c104 TRANSISTOR
2n3904 c33
TRANSISTOR a31
2N3904 A32
2N3904 b11
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NEC D780
Abstract: 2SD78 d780 nec 2sd780 D780A 780a
Text: SILICON TRANSISTORS 2 S D 7 8 0 ,2 S D 7 8 0 A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTIO N P A C K A G E D IM EN SIO N S The 2SD780, 2S D 780 A are designed fo r use in small ty p e equipm ents espe- in m illim eters
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2SD780,
2SD780A
2SB736,
B736A
NEC D780
2SD78
d780 nec
2sd780
D780A
780a
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5413C
Abstract: d54 marking 2SB736 2SB736A 2SD780 2SD780A 1h3-e
Text: NEC i j Í ? r / \ f 7 S ilico n T ra n sisto rs 2 S D 7 8 0 ,7 8 0 A N P N x Id * b 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier í# f i / FEATURES P ACK AG E DIMENSIONS O jg / h ^ ^ - C * W U n it - mm) 7"'J -y KICffl t L T t l t t .
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2SD780,
2SD780A
2SB736,
2SB736A
2SD780
2SD780A
5413C
d54 marking
2SB736
1h3-e
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PDF
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M/8323
Abstract: No abstract text available
Text: Contents Features. Applications. Block Diagram. Selection Guide.
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S-8327B30
S-8327B50
CD105
47nFx2)
M/8323
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PDF
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n5822
Abstract: variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY MAX770-MAX773 MAX773
Text: y k iy jx iy i/i 5 V / 1 2 V / 1 5 V or A d j u s t a b l e , Hi gh-Effici ency, Low IQ, St ep- Up DC- DC Controll ers T hese ICs use tiny external co m p o n e n ts. T he ir high sw itch in g fre q u e n cie s up to 300kH z a llo w surfacem ount m agnetics of 5mm height and 9mm diameter.
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MAX770-MAX773
110pA
300kH
AX770/M
AX771
AX772
MAX773
MAX773
n5822
variable resistor 727M
5V712
3055el
tp3055
TP3055EL
TP3055E
941ODY
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PDF
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transistor 2SA
Abstract: SA1362 LB Nichicon S-8323C A720 transistor 2sd 5200
Text: Contents Applications. 1 Block Diagram. 1 Selection
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S-8327B50
S-8323/8327
transistor 2SA
SA1362
LB Nichicon
S-8323C
A720 transistor
2sd 5200
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