TRANSISTOR D882 P Search Results

TRANSISTOR D882 P Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR D882 P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 40V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	PDF
Untitled Abstract: No abstract text available Text: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 40V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO	Original	PDF	-89-3L OT-89-3L 100mA 10MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	PDF	O-251 O-251 10MHz
TRANSISTOR D882 Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-251 O-251 10MHz TRANSISTOR D882 D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
D882 TRANSISTOR Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	PDF	OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
d882 to-92 Abstract: TRANSISTOR br D882 d882 y Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	100mA 10MHz d882 to-92 TRANSISTOR br D882 d882 y
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40	Original	PDF	O-126 O-126 100mA 10MHz
TRANSISTOR D882 Abstract: D882 PNP TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR PNP transistor D882 datasheet D882 D882 pnp D882 -TO-92 d882 equivalent D882 datasheet Text: PNP TRANSISTOR D882 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage	Original	PDF
D882 TRANSISTOR Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-126 O-126 10MHz D882 TRANSISTOR transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
D882 TRANSISTOR Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-252 O-252 10MHz D882 TRANSISTOR d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	PDF	O-126 O-126 10MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage	Original	PDF	OT-89 OT-89 100mA 10MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM : 1. EMITTER 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	PDF	O-126 O-126 100mA 10MHz

D882 TRANSISTOR Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range	Original	PDF	O-126 O--126 Coll00 290TYP 090TYP D882 TRANSISTOR transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
D882 Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range	Original	PDF	O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
TRANSISTOR D882 input Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25	Original	PDF	OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
D882 Abstract: D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã	Original	PDF	O-251/252 O-251 O-252-2 100mA 10MHz D882 D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882
D882 PNP TRANSISTOR Abstract: No abstract text available Text: 2SD882 NPN MEDIUM POWER TRANSISTOR PRELIMINARY DATA Features • HIGH CURRENT ■ LOW SATURATION VOLTAGE ■ COMPLEMENT TO 2SB772 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH ■ AUDIO POWER AMPLIFIER ■ DC-DC CONVERTER 3 2 1 SOT-32	Original	PDF	2SD882 2SB772 OT-32 O-216) 2SB772. D882 PNP TRANSISTOR
D882 CIRCUIT DIAGRAM Abstract: D882 PNP TRANSISTOR 2SD882 complement 2sd882 transistor D882 datasheet D882 TRANSISTOR br d882 D882 TRANSISTOR PNP D882 tp TRANSISTOR D882 Text: 2SD882 NPN MEDIUM POWER TRANSISTOR Features • HIGH CURRENT ■ LOW SATURATION VOLTAGE ■ COMPLEMENT TO 2SB772 Applications ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH ■ AUDIO POWER AMPLIFIER ■ DC-DC CONVERTER 3 2 1 SOT-32 TO-216 Description	Original	PDF	2SD882 2SB772 OT-32 O-216) 2SB772. D882 CIRCUIT DIAGRAM D882 PNP TRANSISTOR 2SD882 complement 2sd882 transistor D882 datasheet D882 TRANSISTOR br d882 D882 TRANSISTOR PNP D882 tp TRANSISTOR D882
D882 TRANSISTOR PIN Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet Text: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics	Original	PDF	C848T3-H BTD882T3/S BTB772T3/S BTD882T3 O-126 UL94V-0 D882 TRANSISTOR PIN D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet
TRANSISTOR D882 Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882 Text: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics	Original	PDF	C848D3-H BTD882D3 200mA BTB772D3 O-126ML UL94V-0 TRANSISTOR D882 transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	PDF	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
N E C D882 Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882 Text: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E	OCR Scan	PDF	O-126 O-126 N E C D882 br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882

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TRANSISTOR D882 P Search Results

TRANSISTOR D882 P Result Highlights (5)

TRANSISTOR D882 P Datasheets Context Search

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TRANSISTOR D882

D882 TRANSISTOR

d882 to-92

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TRANSISTOR D882

D882 TRANSISTOR

D882 TRANSISTOR

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D882 TRANSISTOR

D882

TRANSISTOR D882 input

D882

D882 PNP TRANSISTOR

D882 CIRCUIT DIAGRAM

D882 TRANSISTOR PIN

TRANSISTOR D882

Y2 transistor

N E C D882