9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
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AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
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h7d marking
Abstract: No abstract text available
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W4EHB:M?:;8;IJ/ =L"a`#?D1, W EM;IJ<?=KH;E<C;H?J/,+N.Y V !08M\_Sj .) O R =L"a`#%_Sj )'*-) -1 `< Q Y%fkb W2BJH7BEM=7J;9>7H=; W"NJH;C;:L :JH7J;:
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IPA50R140CP
97F78
799EH:
h7d marking
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7H diode
Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO
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IPA50R140CP
799EH
7H diode
IPA50R140CP
DIODE marking ED X9
diode marking BEM
LM7m
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transistor marking hy
Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY
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STT3PF20V
OT23-6L
OT23-6L
transistor marking hy
PHV6
KDu TRANSISTOR
7L SOT23
MARKING QV sot23
7L Marking
990L
marking hu sot23
STT3PF20V
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SD42524
Abstract: No abstract text available
Text: SD42524 1A High Power LED Driver with 6～36V Input DESCRIPTION The SD42524 is a step-down PWM control LED driver with a built-in power MOSFET. It achieves 1A continuous output current in 6~36V input voltage range. It provides thermal shutdown circuit, current limit
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SD42524
SD42524
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MARKING SMD npn TRANSISTOR DJ
Abstract: smd transistor marking dj marking DJ SMD 2SD2098 SMD Transistor dj DJ SMD DJ* marking 2SD2098
Text: Transistors SMD Type Low VCE sat Transistor 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1
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2SD2098
OT-89
-50mA,
100MHz
MARKING SMD npn TRANSISTOR DJ
smd transistor marking dj
marking DJ SMD 2SD2098
SMD Transistor dj
DJ SMD
DJ* marking
2SD2098
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1
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2SD2098
OT-89
-50mA,
100MHz
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transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
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IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
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TRANSISTOR D 2627
Abstract: AEDZ150 AEDZ180 AEDZ250 AEDZ330 AEDZ475 AEDZ500 AME8817 AME8817AEDZ150
Text: Analog Microelectronics, Inc. INARY PRELIM AME8817 n General Description 1.5A CMOS LDO n Features The AME8817 family of positive, linear regulators feature low quiescent current 35µA typ. with low dropout voltage, making them ideal for battery applications.
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AME8817
AME8817
1000pF
2013-doc-006-0806
TRANSISTOR D 2627
AEDZ150
AEDZ180
AEDZ250
AEDZ330
AEDZ475
AEDZ500
AME8817AEDZ150
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RN2912AFS
Abstract: RN2913AFS
Text: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2912AFS,
RN2913AFS
RN1912AFS/RN1913AFS
RN2912AFS
RN2913AFS
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Untitled
Abstract: No abstract text available
Text: RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2912AFS,
RN2913AFS
RN1912AFS/RN1913AFS
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MAX3805
Abstract: MAX3805ETE PRBS231 diagram fr 310
Text: 19-2936; Rev 1; 3/06 KIT ATION EVALU E L B AVAILA 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
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MAX3805
RG-188A/U
95Gbps
MO220
MAX3805ETE
PRBS231
diagram fr 310
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MAX3805
Abstract: MAX3805ETE PRBS231 FR4 dielectric constant vs temperature
Text: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
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MAX3805
RG-188A/U
95Gbps
MO220
MAX3805ETE
PRBS231
FR4 dielectric constant vs temperature
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fr4106
Abstract: 10ghz variable attenuator
Text: 19-2936; Rev 1; 3/06 10.7Gbps Adaptive Receive Equalizer The MAX3805 is designed to provide up to 30in 0.75m reach on 6-mil differential FR-4 transmission line, or up to 24ft (8m) on RG-188A/U type coaxial cable, for PRBS data from 9.95Gbps to 10.7Gbps. The
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MAX3805
RG-188A/U
95Gbps
MAX3805ETE
21-0136I
T1633FH-3*
fr4106
10ghz variable attenuator
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RN2112ACT
Abstract: RN2113ACT
Text: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm
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RN2112ACT
RN2113ACT
RN1112CT,
RN1113CT
RN2113ACT
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electromatic s system sv 115 230
Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Text: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo gues. This innovation should facilitate your survey of our entire
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2N705
Abstract: I960 ARMv Germanium mesa
Text: MIL-S-19500/86A 20 March 19o4_ SUPERSEDING MII/-S-19500/86 NAVY 6 June I960 ' MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPE 2N705 This specification has been approved bv the Department of Defense agd is mandatory for use by the Department^ of the Armv. the Navv.
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MH/-S-19500/86A
I/-S-19500/86
2N705
MIL-S-19500
T0-18)
MIL-S-19500.
ruL-S-19500
2N705
I960
ARMv
Germanium mesa
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2SD1627
Abstract: transistor DJ 30 at n430
Text: Ordering num be-:E N 2 0 1 6 A 2SD1627 NO.2016A I NPN Epitaxial Planar Silicon Transistor SA%YO Driver Applications II Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hpg^OOO . Wide ASO
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2SD1627
250mm
500mA
600mA
600lnA
0-15mA
5277KI/N255KI
2SD1627
transistor DJ 30 at
n430
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2SD1627
Abstract: 60AA
Text: Ordering number:EN 2016A 2SD1627 N0.2OI6A SANYO NPN Epitaxial Planar Silicon Transistor Driver Applications i Applications . Motor drivers, hammer drivers, relay drivers, voltage regulator control Features . High DC current gain hFE^4000 . Wide ASO . Very small size making it easy to provide high-density,
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2SD1627
60AA
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M O SII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8
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TPC8303
27mfl
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Untitled
Abstract: No abstract text available
Text: GP1A73A/GP1A73A1 SHARP GP1A73A/GP1A73A1 Compact OPIC Photointerrupter with Connector I Outline Dimensions • Features U n it : m m 1. Com pact type Í5ÍL 2. TTL com patible owing to OPIC output 3. Snap-in m ounting type &Ï 4. 3 kinds o f m ounting plate thickness
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GP1A73A/GP1A73A1
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