TS-L532A
Abstract: panasonic inverter dv 700 manual LP154W01-A3 insyde debug card code pcb circuit diagram of crt tv samsung LP154W01 MCEIR-210 4UR18650F-2-CPL-15 pentium m 740 Insyde bios
Text: Table of Contents Chapter 1 System Introduction 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 System Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
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25C945
Abstract: c945 c945 transistor c945 P c945 npn C945 NPN transistor NPN C945 transistor c945 c945 g dj rw
Text: 045 NPN Transistor« MÀXIMUM KAtlSCiS H nktf rrJgflnf rmulnr Ubttn^ CrJoOw-Ou* totogù EniTWf-B*M 1*4 * C-^lnctai Curmrl Contmuotia Slf mkJJ VCEO Vc b VÉ60 'C V * 50 ¡fi 5.D 1» Unti Ytt v« ViJc rtXA« O w rw rtw IitJG » TrtH D m » r>t 5JMl<n Ffl.fi B o,tc.;iJ
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25C945
c945
c945 transistor
c945 P
c945 npn
C945 NPN transistor
NPN C945
transistor c945
c945 g
dj rw
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electromatic s system sv 115 230
Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Text: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo gues. This innovation should facilitate your survey of our entire
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1N4002 MOTOROLA
Abstract: LM337MT Transistor dj rw 337MT
Text: M M O TO R O LA Three-Term inal Adjustable Output Negative Voltage Regulator The LM337M is an adjustable three-term inal negative voltage regulator capable of supplying in excess of 500 mA over an output voltage range of -1 .2 V to -3 7 V. This voltage regulator is exceptionally easy to use and
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LM337M
1N4002
1N4002 MOTOROLA
LM337MT
Transistor dj rw
337MT
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Untitled
Abstract: No abstract text available
Text: OM6516SC QM6520SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage
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OM6516SC
QM6520SC
O-258AA
OM652QSC
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Untitled
Abstract: No abstract text available
Text: .o«o»o»o»o»o»o A VAVA1xoxoxoxoxoxoxoxoxoxox •>xoxo: ¿xoxoxoxoxoxoxoxoxoxc 5257A 1 7A LDO 5-Pin Adjustable Linear Regulator Description This new very low dropout regula tor is designed to power the next generation of advanced micropro cessors. To achieve very low
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O-220
CS-5257A-1T5
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Untitled
Abstract: No abstract text available
Text: N P N Darlington T ra n sisto r •'!'>£Hi O utline Dimensions 4.6-?-2 ^ ^ 1 0 ]% Eq u ivalen t C ircuit 2.7+0.2 0.7±o .2 Unit ! mm Case ! ITO-220 A b so lu te M ax. R atin g s m Item a 15 Symbol ^ I | & Conditions - T stg Storage Temperature 3V ? Collector Current
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ITO-220
00014b?
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317L
Abstract: 317LB 317LD LM317LBZ VOLTAGE REGULATOR IC LM SERIES IC LM 317 LADJ
Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Three-Terminal Adjustable Output Positive Voltage Regulator The LM317L is an adjustable 3-terminal positive voltage regulator capable of supplying in excess of 100 mA over an output voltage range of 1.2 V to 37 V. This
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LM317L
LM317L
317L
317LB
317LD
LM317LBZ
VOLTAGE REGULATOR IC LM SERIES
IC LM 317
LADJ
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Untitled
Abstract: No abstract text available
Text: 2SD1795 TP10K40 llliSiSiflii " - r - N P N # —U > h > h ‘7 > > i^ iS f/N P N Darlington Transistor Outline Dimensions istillisi 4.6±o.2 Equivalent Circuit 2,7¿0.* 90 0.7 ±0.2 B o- Unit i mm C ase ! ITO-220 ^•220n *=120n ¿E Absolute Max. Ratings
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2SD1795
ITO-220
TP10K40)
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON M O T « ! T E A 7 1 05 VOLTAGE REGULATOR FOR CMOS MICROPROCESSOR BASED SYSTEMS O UTPUT CURRENT : 100 mA ON-CHIP CUR RENT LIMIT AND THERM AL PROTECTION RESETG ENERATOR WITH EXTERNALLY AD JUSTABLE DELAY REGULATOR INPUT VOLTAGE LEVEL DE
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DIP-16
TEA7105
TEA7105
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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diode 437 KZ
Abstract: No abstract text available
Text: 1DI3OOZ-14O 300a • O utline D ra w in g s POWER TRANSISTOR MODULE 13 21 ,29 8r T " 16 I« • 4# ' F e a tu r e s • m f H igh V o lta g e • 7 'J — KP*g/tt • A S O ^ /a I ' • Îfeifciïfc k BX m In c lu d in g Free W h e e lin g D io d e _ . .
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1DI3OOZ-14O
diode 437 KZ
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M53242P
Abstract: M53242 M53290P m53290 zenor diode m5324 M58479P M58482P RC oscillator in inverter circuit diagram M5329
Text: MITSUBISHI LSIs M58479P, M58482P CMOS COUNTER/TIMERS GENERAL DESCRIPTION The M58479P and M58482P are electronic tim er ICs PIN CONFIGURATION TOP VIEW developed by aluminum-gate CMOS technology. Use of these ICs makes possible tim er devices w ithout mechanical
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M58479P,
M58482P
M58479P\
9VIM58482P/
M58479P
M58482P
m58479p
M53242P
M53242
M53290P
m53290
zenor diode
m5324
RC oscillator in inverter circuit diagram
M5329
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BFN15
Abstract: No abstract text available
Text: Ordering number :EN ^6190 CMOS LSI LC651204N/F/L, LC651202N/F/L No. *5 1 9 0 4-Bit Single-Chip Microcontrollers for SmallScale Control Applications Preliminary Overview The LC651204N/F/L and LC651202N/F/L are small-scale application microcontroller products in Sanyo's LC6500
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LC651204N/F/L,
LC651202N/F/L
LC651204N/F/L
LC6500
30-pin
BFN15
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Untitled
Abstract: No abstract text available
Text: B U R R - BROW N« [ XTR104 ] 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS • LESS THAN ±1% TOTAL ADJUSTED ERROR, —40°C TO +85°C • INDUSTRIAL PROCESS CONTROL • BRIDGE EXCITATION AND LINEARIZATION • SCADA
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XTR104
4-20mA
50ppm/Â
110dB
XTR104
4-20mA,
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M53242P
Abstract: M53290P M53242 m53290 zenor diode 5.6 zenor diode l51s m5324 M58479P M58482P
Text: M ITSUBISHI LSIs M58479P, M58482P CM O S C O U N T E R /T IM E R S GENERAL DESCRIPTION The M58479P and M58482P are electronic tim e r ICs developed by alu m inu m -ga te CMOS technology. PIN CONFIGURATION TOP VIEW Use o f these ICs makes possible tim e r devices w ith o u t m echanical
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M58479P,
M58482P
M58479P
M5g482Pj
M58482P
M53242P
M53290P
M53242
m53290
zenor diode
5.6 zenor diode
l51s
m5324
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SO45
Abstract: No abstract text available
Text: CS-2516 W SCS-2516 Pulse-load Battery Monitor D e sc r ip t io n The CS-2516 is designed for use in bat tery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous moni
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SCS-2516
CS-2516
CS-2516N8
CS-2516D8
SO45
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S9004
Abstract: SOT-26 ci
Text: s TAIWAN SEMICONDUCTOR b RoHS COMPLIANCE S O T-26 654 Pin Definition; TS9004 Series 300mA CMOS LDO Adjustable Voltage with Enable & Power Good SOT-25 1. Input 5 2. Ground 3. Enable 1 23 4. Power Good 5. Adjustable 6. Output 4 Pin Definition: 1. Input 2. Ground
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TS9004
300mA
OT-25
S9004
SOT-26 ci
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Untitled
Abstract: No abstract text available
Text: DATA SHEET M Ff / PHOTOCOUPLER / PS2562-1 ,-2, PS2562L-1,-2 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T h e P S 2 5 6 2 -1 , -2 and P S 2 5 6 2 L -1 , -2 are o p tically cou ple d iso la to rs con tain ing a G aA s light em ittin g diode and an
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PS2562-1
PS2562L-1
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2PS25
Abstract: LC-2228
Text: DATA SHEET M Ff / PHOTOCOUPLER / PS2566-1 ,-2, PS2566L-1 ,-2 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T h e P S 2 5 6 6 -1 , -2 and P S 2 5 6 6 L -1 , -2 are o p tica lly cou ple d iso la to rs con tain ing G aA s light em itting dio d e s and an
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PS2566-1
PS2566L-1
2PS25
LC-2228
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NDS8928
Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT Dual N & P-Channel MOSFET
Text: July 1996 N N D S8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese dual N -a n d P -C hannel en h an c em en t m ode p o w er field effect transistors are produ ced using N ational's proprietary, high cell density, DMOS
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NDS8928
NDS8928
0D33347
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
Dual N & P-Channel MOSFET
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BEL 1240
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division RC4200 A n a lo g M u ltip lie r Features Multiply, divide, square, square root, RMS-to-DC conversion, AGC and modulate/demodulate Wide bandwidth - 4 MHz Signal-to-noise ratio - 94 dB • High accuracy • Nonlinearity-0 .1 %
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RC4200
RC4200
250jlA
RC4200N
RC4200AN
RM4200D
RM4200AD
RM4200AD/883B
ci73LiO
BEL 1240
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SL3046
Abstract: SL3046C SL3086 Monolithic Transistor Pair SL3045
Text: SL3045/SL3046/SL3086 PLESSEY Semiconductors SL3045C SL3046C SL3086C GENERAL PURPOSE NPN TRANSISTOR ARRAY T h e S L 3 0 4 5 C , S L 3 0 4 6 C and S L 3 0 8 6 C a re m o n o lith ic arra ys o f fiv e g e n e ra l p u rp o s e tra n s is to rs a rra n g e d as a
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Untitled
Abstract: No abstract text available
Text: CS-5203A Features Description The CS-5203A series of linear regu lators provides 3A at adjustable and fixed voltages of 1.5V, 3.3V, and 5V with an accuracy of + / - 1%. The adjustable version uses two external resistors to set the output voltage within a 1.25V to 18V
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CS-5203A
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