Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR FT 12 Search Results

    TRANSISTOR FT 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FT 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335

    BLF881

    Abstract: No abstract text available
    Text: A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D Objective data sheet D Rev. 00.02 — 23 January 2009 R R R R R UHF power LDMOS transistor D D D D D BLF881 D FT FT A A R R D D D 1. Product profile


    Original     		PDF BLF881 BLF881

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation


    Original     		PDF ENA1120A 2SC5646A 10GHz A1120-9/9

    2SC5015

    Abstract: 2SC5015-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation


    Original     		PDF 2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1

    617-70

    Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA


    Original     		PDF 2SA1977 617-70 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1118A 2SC5551A 300mA, 300mA) 250mm2 A1118-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1078A CPH6003A RF Transistor http://onsemi.com 12V, 150mA, fT=7GHz, NPN Single CPH6 Features • • • • High gain fT=7GHz typ High Current (IC=150mA) Ultraminiature and thin 6pin package Large Collector Disspation (800mW) Specifications


    Original     		PDF ENA1078A CPH6003A 150mA, 150mA) 800mW) 250mm2 A1078-7/7

    Silicon Bipolar Transistor

    Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor
    Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, | S21E |2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN


    Original     		PDF MP4T56800 MP4T568 MP4T56800, Silicon Bipolar Transistor MP4T56800 Medium Power Bipolar Transistors S21E S22E c 1685 transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1087A 2SC5347A RF Transistor 12V, 150mA, fT=4.7GHz, NPN Single PCP http://onsemi.com Features High-frequency medium output amplification VCE=5V, IC=50mA : fT=4.7GHz typ (f=1GHz) : ⏐S21e⏐2=8dB typ (f=1GHz) : NF=1.8dB typ (f=1GHz)


    Original     		PDF ENA1087A 2SC5347A 150mA, S21e2 900mm2 A1087-8/8

    2SA1969

    Abstract: ITR05045 ITR05046 ITR05047 ITR05048 ITR05049
    Text: Ordering number:ENN5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,MediumCurrent Ultrahigh-Speed Switching Applications Features Package Dimensions • High fT fT=1.7GHz typ . · Large current capacity (IC=–400mA).


    Original     		PDF ENN5098 2SA1969 400mA) 2SA1969] 25max 2SA1969 ITR05045 ITR05046 ITR05047 ITR05048 ITR05049

    Nec K 872

    Abstract: 517 E1 3007 NEC k 2134 transistor 2SC5668 k 3918 TRANSISTOR MARKING 702 6pin ic uPA892TC MARKING 702 6pin
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 21.0 GHz fT high-gain transistor fT = 21.0 GHz TYP., S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz


    Original     		PDF PA892TC S21e2 2SC5668) 2SC5668 PA892TC-T1 Nec K 872 517 E1 3007 NEC k 2134 transistor 2SC5668 k 3918 TRANSISTOR MARKING 702 6pin ic uPA892TC MARKING 702 6pin

    2038A

    Abstract: 2SA1969 17gh
    Text: Ordering number:5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,MediumCurrent Ultrahigh-Speed Switching Applications Features Package Dimensions • High fT fT=1.7GHz typ . · Large current capacity (IC=–400mA).


    Original     		PDF 2SA1969 400mA) 2SA1969] 2038A 2SA1969 17gh

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    Original     		PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1080A 2SC5415A RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP http://onsemi.com Features High gain : ⏐S21e⏐2=9dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF ENA1080A 2SC5415A 100mA, S21e2 250mm2 A1080-8/8

    2SD1875

    Abstract: 2Sd-1875
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1875L-x-T92-B 2SD1875G-x-T92-B 2SD1875L-x-T92-K 2SD1875G-x-T92-K 2SD1875L-x- T92-R 2SD1875G-x- 2SD1875 2Sd-1875

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B

    2SC5551

    Abstract: TA-2665 marking eb
    Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).


    Original     		PDF ENN6328 2SC5551 300mA) 2SC5551] 25max 2SC5551 TA-2665 marking eb

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 250mm2 QW-R208-024

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R

    2SA1201

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 QW-R208-024

    TO92NL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1

    2SA594

    Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178
    Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)


    OCR Scan     		PDF 2sa594 200MHz 2SC594 2SA594 FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178

    Untitled

    Abstract: No abstract text available
    Text: 17E D • 7ETfl7t.M 0000303 s “BIG IDEAS IN BIG POWER” ■ ■ ■ ■ PowerTecn POÙ1ERTECH INC 10Ü AMPERES FT-5 0 0 FT- 501 FT - 502 SILICON IMPIM TRANSISTOR ~ T - 33-/5 FEATURES: VCE sat . 'B E - . 0.6 V @ 50 A


    OCR Scan     		PDF T0-114P PT500 100KHz