UMH15N
Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
Text: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.
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UMH15N
OT-363
DTC144T
026TYP
65TYP)
021REF
01-Jan-2006
100MHz
UMH15N
transistor H15
marking H15
multi emitter transistor
003 SOT363
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors UMH15N SOT-363 DIGITAL TRANSISTOR (NPN+NPN) FEATURES z Two DTC144T chips in a package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half.
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UMH15N
OT-363
DTC144T
100MHz
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manson
Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
Text: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/695
2N4033UE1
MIL-PRF-19500.
OT-23
O-236)
manson
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
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2N2907AUE1
Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
Text: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/686
2N2907AUE1
MIL-PRF-19500.
OT-23
O-236)
2N2907AUE1
award 686
qm marking code sot-23
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A113
MIL-PRF19500
MARKING code sot23 h15
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837T1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.
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L2SC3837T1G
SC-74
L2SC3837T1G
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IC ua 74
Abstract: L2SC3837T1G SC7461
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837T1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.
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L2SC3837T1G
SC-74
L2SC3837T1G
200MHz
IC ua 74
SC7461
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features L2SC3837T1G S-L2SC3837T1G 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.
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L2SC3837T1G
S-L2SC3837T1G
AEC-Q101
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2SJ204
Abstract: 2SK1582 marking h15
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
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2SJ204
2SJ204,
2SK1582
2SJ204
2SK1582
marking h15
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SC8810
Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
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SC-88,
SC-74
lea50
SC-88
SC8810
transistor h9
DTC124EK equivalent
DI-74
H9 transistor marking
DTC114TK
dtc143tk
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QCA30B40
Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Text: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.
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QCA30B/QCB3QA40/60
QCA30B
QCB30A
400/600V
QCA30B
UUE76102
QCB30A
QCA30B40
QCB30A40
500/i
QCA30B60
QCB30A60
711-1543
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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transistor marking T79 ghz
Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications
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2SC5508
2SC5508
2SC5508-T2
transistor marking T79 ghz
TT 2076 transistor
MARKING T79 "NPN Transistor"
transistor T79 ghz
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUH150/D SEMICONDUCTOR TECHNICAL DATA BUH 150 D esigner’s Data Sheet POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH150 has an application specific s ta te -o f-a rt die designed for use in
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BUH150/D
BUH150
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2SK458
Abstract: 2SK45
Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C
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2SK458
2SK458Ã
2SK458
2SK45
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MARKING toshiba TLP621-4
Abstract: TLP621 11-5B2 E67349 TLP621-2 TLP621-4 ul standards for relay
Text: T O S H IB A TLP621 ,TLP621-2,TLP621 -4 TOSHIBA PHOTOCOUPLER TL P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO GRAM M ABLE CONTROLLER AC /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor
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TLP621
TLP621-2
TLP621
TLP621,
TLP621-2,
TLP621-4
TLP621-4
MARKING toshiba TLP621-4
11-5B2
E67349
ul standards for relay
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transistor D 716
Abstract: No abstract text available
Text: IMH15A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMH15A; H15 IMH15A (SMT6) 2 .9 ± 0 .2 1. 9 2 0 . 2 u .a r fo.95 0.95Ì • • • package contains two independent
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IMH15A
SC-74)
IMH15A;
DTC144TKA)
SC-59)
IMH15A
transistor D 716
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113ZS
Abstract: DTA113Zs
Text: DTD113ZS Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in SPT (SC-72) package • a built-in bias resistor allows inverter circuit configuration without external input resistors • bias resistor consists of a thin-film
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DTD113ZS
SC-72)
DTA113ZS
113ZS
DTA113Zs
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ca3042
Abstract: RCA FM Receiver Circuits A3042 CA3042E schematic diagram fm tube Ca 3042 equivalent 12fx5
Text: Linear Integrated Circuits CA3042 Wide-Band Amplifier, FM Detector AF Preamplifier/Driver For Sound Sections of TV Receivers Using Transistor-Type AF Output Amplifiers Features: 14-Lead Quad-In-Line Plastic Package Q SUFFIX H-1596 High sensitivity - input lim iting
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CA3042
14-Lead
H-1596
A3042
500mV
ca3042
RCA FM Receiver Circuits
CA3042E
schematic diagram fm tube
Ca 3042 equivalent
12fx5
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Untitled
Abstract: No abstract text available
Text: Power Transistor Arrays PU3214, PU4214, PU4514 Silicon NPN Epitaxial Planar Type PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m 4.2max. 20.5max. I-h - n E o Power Amplifier, Switching Complementary Pair with PU3114, PU4114, PU4414 0.8+0.25IF
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PU3214,
PU4214,
PU4514
PU3214
PU3114,
PU4114,
PU4414
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B1238
Abstract: 2SB1238 transistor 2sb1238
Text: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications
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2SB1238
2SD1859
2SB1238
B1238
transistor 2sb1238
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PU3119
Abstract: PU3219 PU4119 PU4219 PU4419 PU4519
Text: Power Transistor Arrays PU3119, PU4119, PU4419 PU3119, PU4119, PU4419 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3119 U n i t ’. m m 4.2max. 20.5max. Power Amplifier, Switching Domplementary Pair with PU3219, PU4219, PU4519 Iflililí If IfIf °-8±0'S
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PU3119,
PU4119,
PU4419
PU3219,
PU4219,
PU4519
PU3119:
PU3119
PU3219
PU4119
PU4219
PU4419
PU4519
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PU4424
Abstract: PU4124 PU3124
Text: Power Transistor Arrays PU3124, PU4124, PU 4424 PU3124, PU41.24, PU4424 Package Dimensions P U 3124 Unit! mm 4.2max. 20.5max. Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching 0.8 ±0.25 4 ^0.5 + 0 .15 1.0±0.25 2.54 + 0.2 I 0 .5 + 0 .1 5
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PU3124,
PU4124,
PU4424
PU3124:
PU4124:
-12mA
PU4424
PU4124
PU3124
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE T> • 7*1=10741 0000*160 433 H S A K J Silicon NPN Triple Diffused Planar ☆High Speed Switching Transistor 2SC4298 e Outline Dewing 5 . . FM100 Application Example : General Purpose Electrical Characteristics A bsolu te M a x im u m Ratings
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2SC4298
FM100
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ic ma 8910
Abstract: PU4117 PU3117 PU4417
Text: Power Transistor Arrays PU3117, PU4117, PU4417 PU3117, PU4117, PU4417 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3 117 Unit !m m 4 2ma\ 20 5 m a \ Power Amplifier, Switching • Features 0 8= 0 2 | _ • H igh DC c u r re n t gain h FE
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PU3117,
PU4117,
PU4417
PU3117:
PU4117:
ic ma 8910
PU4117
PU3117
PU4417
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