Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
RN2909FS
RN2908FS
RN1907FS
RN1909FS
RN2908FSesented
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
RN2909FS
RN2908FS
RN1907FS
RN1909FS
RN2908FS
RN2907FS
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RN2909FS
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LDTC115TET1G
Abstract: transistor h6 marking H6 SC-89 H6100
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC115TET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTC115TET1G
SC-89
100MHz
463C-01
463C-02.
LDTC115TET1G
transistor h6
marking H6
SC-89
H6100
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Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 R2 2 5 3 4 +0.02
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RN2907FS
RN2909FS
RN2908FS
RN2907FS
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RN1907FS
RN1909FS
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Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more
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RN2907FS
RN2909FS
RN2908FS
RN2908FS
RN2907FS
RN1907FS
RN1909FS
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EM7164SU16
Abstract: No abstract text available
Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision
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EM7164SU16
1Mx16
690-7t
100ns
120ns
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2907FS
RN2909FS
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RN2909FS
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS marking h8
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more
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RN2907FS
RN2909FS
RN2908FS
RN2907FS
RN2908FS
RN1907FS
RN1909FS
RN2909FS
marking h8
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Application Notes
Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the
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transistor BC 339
Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
transistor BC 339
TRANSISTOR BC 629
339 marking code transistor
PG-SOT363-6-1
MA000849564
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Siemens 1736
Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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0235bG5
Q004312
BCY66
Q60203-Y66
TcaseS45Â
fi23Sb05
Q0QM31?
120Hz
Siemens 1736
2sc 1740 TRANSISTOR equivalent
QS 100 NPN Transistor
101S
BCY66
Q60203-Y66
10-lmA
Scans-00145246
Q004312
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ht4 marking
Abstract: TRANSISTOR MARKING TE SOT363
Text: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor
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MAM380
SCA64
5002/00/03/pp8
ht4 marking
TRANSISTOR MARKING TE SOT363
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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MARKING CODE ht9
Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2
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SCA64
15002/00/01/pp8
MARKING CODE ht9
MARKING ht9 sot363
h9 marking
OT363
SOT363 marking code H9
transistor h9
MARKING HT9
SC88 SOT363 plastic package Ht9 MARKING CODE
hT9 marking
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60w af applications Sanyo
Abstract: No abstract text available
Text: Ordering n um ber: ENN6960 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 Is m I yo i 140V / 12A, AF 60W Output Applications Features Package Dimensions . Wide ASO because of’ on-chip ballast resistance.
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ENN6960
2SB1683
2SD2639
2SB1683
2010C
60w af applications Sanyo
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53c
Oai45b3
BUZ50B
Q0145b7
T-39-11
bbS3T31
00145bfl
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ALY TRANSISTOR
Abstract: transistor ALY 8 transistor ALY
Text: POSITIVE THERMISTORS "Posi-R" • nichicon For Overcurrent Protection Characteristic of ZPC4MCE100D When som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor
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ZPC4MCE100D
ALY TRANSISTOR
transistor ALY 8
transistor ALY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SB775
Abstract: 2SD895
Text: O rdering num ber: EN 679F 2SB775/2SD895 N0.679F 2SB775: PN P E pitaxial P lanar Silicon Transistor 2SD 895: NPN Triple Diffused P lan ar Silicon Transistor 85V/6A, AF 35W Output Applications F e a tu re s •Wide ASO because of on-chip ballast resistance.
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2SB775/2SD895
2SB775:
2SD895:
2SB775
2SB775
2SD895
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TT7100
Abstract: IR2416
Text: 7-U nit 150mA Transistor Array IR2416 • IR2416 7-Unit 150mA Transistor Array Pin Connections Description T he IR2416 is a 7-circuit driver. T he internal clamping diodes enable the IC to drive the inductive load directly. IN, H ■ IN2 Features in 3 1. Low output saturation voltage
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150mA
IR2416
IR2416
16-pin
130mA
TT7100
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BUZ356
Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUZ356
T0218AA;
0D14flEb
T-39-13
tbS3T31
bb53c
BUZ356
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