Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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2SK3079A
Abstract: transistor HD marking 1350D
Text: 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm • Output power: Po = 33.50dBmW 2.2 W (min) · Gain: Gp = 13.50dB (min) · Drain Efficiency: ηD = 50.0% (min) Maximum Ratings (Ta = 25°C)
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2SK3079A
50dBmW
2SK3079A
transistor HD marking
1350D
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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transistor equivalent table
Abstract: NPN PNP sot-563 sc74a A6 MARKING SC-74 BD NPN transistors transistor fg 680 gd marking H6 sot 23 SOT-353 MARKING G2 SC-88A npn SC-74 H2
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA Saturation Voltage Bias Collector to Resistor
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CHEMG11PT
CHDTC124E
CHDTC144E
CHDTC114Y
CHDTC143Z
CHDTC114E
transistor equivalent table
NPN PNP sot-563
sc74a
A6 MARKING SC-74
BD NPN transistors
transistor fg 680 gd
marking H6 sot 23
SOT-353 MARKING G2
SC-88A npn
SC-74 H2
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TRANSISTOR 2n697
Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
Text: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
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MIL-S-19500/99E
2N696,
2N697,
2N696S
2N697S
MIL-S-19500/99E,
MIL-S-19500/99E
TRANSISTOR 2n697
2N697S
2N697
2N696
TRANSISTOR 2n696
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Untitled
Abstract: No abstract text available
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857
2N2857.
T4-LDS-0223,
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2N2857
Abstract: 2N2857 JANTXV
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTXV
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2N2857 JANTX
Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTX
2n2857 common base amplifier
2N2857 JANTXV
TO72 package
2N2857 JAN
SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
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2SK3475
Abstract: 0480F
Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min · Gain: GP = 14.9dB (min) · Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C) Characteristics
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2SK3475
SC-62
2SK3475
0480F
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2SK3476
Abstract: No abstract text available
Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 7.0 W min · Gain: GP = 11.4dB (min) · Drain efficiency: ηD = 60% (min) Maximum Ratings (Ta = 25°C) Characteristics
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2SK3476
2SK3476
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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Transistor k163
Abstract: A6006 K229A L9112 3225 K30 transistor k72 t8 RA53 thermistor CN701 c828 transistor working H9014
Text: ORDER NO. CPD0010001C0 Notebook Computer CF-72 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-72 series are numbered in accordance with the types of the CPU, LCD
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CPD0010001C0
CF-72
CF-72
CN703
BLM21A121
SW702
EVQPLDA15
SW703
Transistor k163
A6006
K229A
L9112
3225 K30
transistor k72 t8
RA53 thermistor
CN701
c828 transistor working
H9014
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lg r40 MOTHERBOARD CIRCUIT diagram
Abstract: I7 motherboard circuit diagram intel i5 MOTHERBOARD pcb CIRCUIT diagram schematic diagram converter fdd to usb MC3064 SW801 317 jrc VOLTAGE REGULATOR ATI RAGE mobility m1 CN603 C144* transistor REPLACEMENT
Text: ORDER NO. CPD0010002C0 Notebook Computer CF-48 This is the Service Manual for the following areas. M .for U.S.A. and Canada E .for U.K. G .for Germany F .for France S .for Sweden T .for Italy P .for Spain Model Number Reference The models in the CF-48 series are numbered in accordance with the types of the CPU, LCD
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CPD0010002C0
CF-48
CF-48
CN601
MMZ2012R102A
JK601
CN503
FH12-8S-1SH
lg r40 MOTHERBOARD CIRCUIT diagram
I7 motherboard circuit diagram
intel i5 MOTHERBOARD pcb CIRCUIT diagram
schematic diagram converter fdd to usb
MC3064
SW801
317 jrc VOLTAGE REGULATOR
ATI RAGE mobility m1
CN603
C144* transistor REPLACEMENT
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Untitled
Abstract: No abstract text available
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
O-205AD)
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
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handheld scope leader
Abstract: microvision ISL59885ISZ-T7
Text: Auto-Adjusting Sync Separator for HD and SD Video ISL59885 Features The ISL59885 video sync separator extracts sync timing information from both standard and non-standard video inputs in the presence of Macrovision pulses. The ISL59885 provides horizontal, vertical, and composite sync outputs as well as
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ISL59885
ISL59885
5m-1994.
MS-012.
FN7442
handheld scope leader
microvision
ISL59885ISZ-T7
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Untitled
Abstract: No abstract text available
Text: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.
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NJF6510
MX2N3822.
MIL-PRF-19500
MIL-PRF-19500
O-206AF)
T4-LDS-0260,
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Untitled
Abstract: No abstract text available
Text: NJF6510 N-CHANNEL, J-FET DEPLETION MODE TRANSISTOR Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6510 is ideal for functioning as a VHF and a small signal amplifier. This part number is also an equivalent to the MX2N3822. Important: For the latest information, visit our website http://www.microsemi.com.
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NJF6510
MIL-PRF-19500
NJF6510
MX2N3822.
MIL-PRF-19500
O-206AF)
T4-LDS-0260,
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2n3440 equivalent
Abstract: JAN 2N3439 UA 2N3439 JANTX
Text: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
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2N3439
2N3440
MIL-PRF-19500/368
2N3440
LDS-0022,
2n3440 equivalent
JAN 2N3439 UA
2N3439 JANTX
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Untitled
Abstract: No abstract text available
Text: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
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2N3439L
2N3440L
MIL-PRF-19500/368
2N3440L
LDS-0022-1,
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Untitled
Abstract: No abstract text available
Text: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
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2N3439L
2N3440L
MIL-PRF-19500/368
2N3440L
LDS-0022-1,
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF4N01 HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M M S F 4N 01H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Single N -C hannel Field E ffect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MMSF4N01
MMSF4N01HD/D
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2sc3052
Abstract: MARKING HRA MARKING XL
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.
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2SC3052
2SC3052
100mA,
270Hz
MARKING HRA
MARKING XL
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET
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DF2C01HD/D
MMDF2C01HD/D
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transistor HD marking
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN3C14F
transistor HD marking
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