TRANSISTOR HE8050S Search Results

TRANSISTOR HE8050S Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR HE8050S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HE8050S Abstract: transistor he8050s HE8050SC equivalent of HE8050S HE6110 Text: HI-SINCERITY Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. Absolute Maximum Ratings	Original	PDF	HE6110 HE8050S HE8050S 25hibited transistor he8050s HE8050SC equivalent of HE8050S HE6110
HE8050S Abstract: equivalent of HE8050S MARKING CODE H1 transistor he8050s h2 marking SOLID POWER CORP transistor h2a HE6110 Text: HI-SINCERITY Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings	Original	PDF	HE6110 HE8050S HE8050S 183oC 217oC 260oC equivalent of HE8050S MARKING CODE H1 transistor he8050s h2 marking SOLID POWER CORP transistor h2a HE6110
HE8550S Abstract: HE8050S Text: HI-SINCERITY Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92	Original	PDF	HE6129 HE8550S HE8550S 150mA HE8050S 183oC 217oC 260oC HE8050S
HE8550S Abstract: HE8050S Text: HI-SINCERITY Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2002.03.05 Page No. : 1/4 MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92	Original	PDF	HE6129 HE8550S HE8550S 150mA HE8050S HE8050S
H66T19AA Abstract: H66T19BA H66T32AA H66T32BA H66T68AA ha2002 64not Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200220 Issued Date : 1998.04.08 Revised Date : 2002.12.20 Page No. : 1/4 H66T19/32/68 Series Description The H66T19/32/68 series is a CMOS LSI designed for use in door bell, telephone and toy applications. It is an on-chip ROM program-med for	Original	PDF	HA200220 H66T19/32/68 H66T19/32-/68 64-Note H66T19XA, H66T32XA, H66T68XA H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA ha2002 64not
equivalent of HE8050S Abstract: H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA HE8050S transistor j 127 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 1998.04.08 Revised Date : 1999.08.01 Page No. : 1/4 H66T19/32/68 Series Description The H66T19/32/68 series is a CMOS LSI designed for use in door bell, telephone and toy applications. It is an on-chip ROM	Original	PDF	H66T19/32/68 64-Note equivalent of HE8050S H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA HE8050S transistor j 127
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	PDF	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212