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    TRANSISTOR IC 4A DATASHEET NPN Search Results

    TRANSISTOR IC 4A DATASHEET NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR IC 4A DATASHEET NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD5072

    Abstract: No abstract text available
    Text: KSD5072 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage (VCBO=1500V) • High Switching Speed (tF. max=0.4µs) ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage


    Original     		PDF KSD5072 KSD5072

    TRANSISTOR MJD122

    Abstract: TRANSISTOR tip122 MJD122 TIP122 NPN Transistor 8A
    Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP122


    Original     		PDF MJD122 TIP122 TRANSISTOR MJD122 TRANSISTOR tip122 MJD122 TIP122 NPN Transistor 8A

    MJD112

    Abstract: No abstract text available
    Text: MJD112 tm NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ


    Original     		PDF MJD112 MJD112

    Darlington NPN Silicon Diode

    Abstract: No abstract text available
    Text: MJD112 tm NPN Silicon Darlington Transistor Features • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ


    Original     		PDF MJD112 MJD112 Darlington NPN Silicon Diode

    transistor H 802

    Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
    Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 E800STU transistor H 802 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild

    Untitled

    Abstract: No abstract text available
    Text: KSC5024 NPN Silicon Transistor • High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage Ta = 25°C unless otherwise noted Parameter Ratings


    Original     		PDF KSC5024 KSC5024

    KSC5024

    Abstract: SC-65
    Text: KSC5024 NPN Silicon Transistor • High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol VCBO Collector-Base Voltage T a = 25°C unless otherwise noted Parameter Ratings


    Original     		PDF KSC5024 KSC5024 SC-65

    NPN Transistor 1500V 20a

    Abstract: No abstract text available
    Text: KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs Max. TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSD5707 NPN Transistor 1500V 20a

    transistor H 802

    Abstract: No abstract text available
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 transistor H 802

    solenold

    Abstract: No abstract text available
    Text: KSE5740/5741/5742 KSE5740/5741/5742 High Voltage Power Switching In Inductive Circuits • • • • • • High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control TO-220 1 1.Base NPN Silicon Darlington Transistor


    Original     		PDF KSE5740/5741/5742 O-220 KSE5740 KSE5741 KSE5742 150lders solenold

    MJE800

    Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
    Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 O-126 MJE802STU MJE800 TRANSISTOR S 802 MJE800/801/803 equivalent

    KSE3055

    Abstract: No abstract text available
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular KSE3055


    Original     		PDF KSH3055 KSE3055 500mA KSE3055

    mje3055

    Abstract: mje3055 data transistor MJE3055 MJD3055
    Text: MJD3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055


    Original     		PDF MJD3055 MJE3055 500mA mje3055 mje3055 data transistor MJE3055 MJD3055

    MJE3055T

    Abstract: MJE305
    Text: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector-Emitter Voltage


    Original     		PDF MJE3055T O-220 MJE3055T MJE305

    702 TRANSISTOR

    Abstract: kse800
    Text: KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 702 TRANSISTOR kse800

    MJE3055TTU

    Abstract: No abstract text available
    Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE3055T O-220 MJE3055TTU O-220

    KSE3055T

    Abstract: No abstract text available
    Text: KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSE3055T O-220 KSE3055T KSE3055TTU

    Untitled

    Abstract: No abstract text available
    Text: MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to MJE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF MJE800/801/803 O-126 MJE700/701/702/703 MJE800/801 MJE802/803

    transistor k 702

    Abstract: TRANSISTOR S 802 kse800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802

    TRANSISTOR tip122

    Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
    Text: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122


    Original     		PDF MJD122 TIP122 MJD127 TRANSISTOR tip122 QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn

    Untitled

    Abstract: No abstract text available
    Text: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for SurfaceMount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122


    Original     		PDF MJD122 TIP122 MJD127

    Untitled

    Abstract: No abstract text available
    Text: KSC5024 KSC5024 High Voltage and High Reliabilty • High Speed Switching • Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 800


    Original     		PDF KSC5024

    BDX33 application notes

    Abstract: bdx33c bdx33
    Text: BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BDX33/A/B/C BDX34/34A/34B/34C O-220 BDX33 BDX33A BDX33B BDX33C BDX33 application notes bdx33

    SOT89 transistor marking 4A

    Abstract: FJC1386 FJC2098 SOT89 MARKING CODE B2 camera strobe flash
    Text: FJC2098 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC1386 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 2 0 9 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC2098 FJC1386 OT-89 FJC2098 SOT89 transistor marking 4A FJC1386 SOT89 MARKING CODE B2 camera strobe flash