GMBTA13
Abstract: No abstract text available
Text: GMBTA13 NPN Silicon Elektroni sche Bauelemente Epitaxial Transistor A suffix of "-C" specifies halogen & lead-free SC-59 A L DESCRIPTION S The GMBTA13 is designed for Darlington Amplifier Transistor. 2 3 Top View Dim Min Max B 1 D J C * Voltage VCES=30V •Collector-Emitter
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GMBTA13
SC-59
GMBTA13
01-Jun-2002
100mA
50MHz
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5n06v
Abstract: 5n06 TMOS E-FET AG3B CASE369A
Text: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER
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5N06V/curves
5n06v
5n06
TMOS E-FET
AG3B
CASE369A
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wacom
Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Text: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH2729-8SM
Sii255-24-f
wacom
3 w RF POWER TRANSISTOR 2.7 ghz
PH2729-8SM
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PH2729-65M
Abstract: No abstract text available
Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH2729-65M
Curren44)
2052-56X-02
PH2729-65M
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P77 transistor
Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Text: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry
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ECG5016A
PH1214-
P77 transistor
1.5 j63
.15 j63
BZ15
ECG5016A
l 9113
J4 81 diode
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NPN TRANSISTOR SC-70
Abstract: No abstract text available
Text: UMW12N/FMW12 h 7 > y ^ ^ /Transistors IIM 1 A M O N FMW12 r a T J U S - i - J U K h 7 > V * * / D u a l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor Ü Ü'/l&iBliffl/RF Amplifier • w* ^M ^j& B /D im en sio n s Unit : mm 1) UMT (SC-70), SMT (SC-59) tW\ —
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UMW12N/FMW12
FMW12
SC-70)
SC-59)
12N/FMW
NPN TRANSISTOR SC-70
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Untitled
Abstract: No abstract text available
Text: DTC363EK Digital transistor, NPN, with 2 resistors Features Dimensions Units: mm • • available in SMT3 (SMT, SC-59) package DTC363EK (SMT3) 19x02 package marking: DTC363EK; H27 J llD i 095 • in addition to standard features of digital transistor, this transistor has:
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DTC363EK
SC-59)
DTC363EK;
19x02
DTC363EK
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MPS6560
Abstract: audio transistor
Text: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage
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MPS6560
625mW
T-29-21
100piA,
100mA,
500mA,
30MHz
100KHz
audio transistor
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LT 5251
Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Text: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >
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02SD4711
cycleS50%
LT 5251
2s87
a1t transistor
TRANSISTOR A1t
Y500200
t430 transistor
transistor bc 541
5251 F ic
T440
2SB564
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QM15TB-24B
Abstract: A3102 QM15
Text: MITSUBISHI TRANSISTOR MODULES j QM15TB-24B MEDIUM POWER SWITCHING USE _ iNSULATED TYPE j f •i i i • Ic Collector current. 15A • V cex Collector-emitter voltage. 1200V • hFE DC current gain. 250
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QM15TB-24B
E80276
E80271
QM15TB-24B
A3102
QM15
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MDB Resistor
Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Text: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart
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MIL-S-19500/189B
2N1224
2N1225
MDB Resistor
2N1225
transistor equivalent table
IRC MMC carbon
marking "3AA"
410B
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qm75ha-h
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES j I QM75HA-H | HIGH POWER SWITCHING USE ! INSULATED TYPE j QM75HA-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 6 0 0 V DC current gain. 75
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QM75HA-H
E80276
E80271
qm75ha-h
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transistor military
Abstract: 2N1358
Text: h/ ttt _o_iflKnn/ioori X O O \-> J L Y U L A J - k j - A <7 U U U / A TV/TT?‘M T \ A/TTT XT TP x1 < n . 1 T A A J 1 1 x y X T 1 X J J l ^ JL 21 March 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTOR. PNP. GERMANIUM, HIGH-POWER TYPE 2N1358 This amendment forms a part of Military Specification MIL-S-19500/122C,
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2N1358
MIL-S-19500/122C,
transistor military
2N1358
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bd132
Abstract: transistor ALG 20
Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter
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BD132
OT-32
BD131.
bbS3T31
0D34251
BD131
BD132
bb53T31
transistor ALG 20
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blw95
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a
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bbS3T31
0DS1S14
blw95
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RCA Solid State Power Transistor
Abstract: 2n1700 RFT oscilloscope
Text: 01 G E SOLI» STATE 3875081 G E SOLID STATE DlF|3fl75Gûl □01734‘ì E 01E 17349 D / - J S '-'/J General-Purpose Power Transistors ' File Num ber 141 Silicon N -P -N * Pow er-Sw itching Transistor
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3fl75GÃ
2N1700
O-205AD
RCA-2N1700
2N1700
RCA Solid State Power Transistor
RFT oscilloscope
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Untitled
Abstract: No abstract text available
Text: 2N3822 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency amplifier applications. The 2N3822 features low gate leakage current and low input capacitance.
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2N3822
2N3822
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Untitled
Abstract: No abstract text available
Text: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA
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J200M
Abstract: No abstract text available
Text: h 7 'y UMC4N FMC4A • UM C4N/FM C4A 2 /Transistors /Dual Mini-Mold Transistor NPN/PNP v 'J3> Epitaxal Planar NPN/PNP Silicon Transistor Z -4 "J f - > ? Ulfe/Switching Circuit 1W f * \r ; ä E l /Dimensions Unit : mm « Ä 1) UMT (SC-70), SMT (SC-59) t |h] -
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SC-70)
SC-59)
J200M
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BFS22A
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE bbS3^31 DD5fl7ES Ifl? I IAPX BFS22A J> V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran
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BFS22A
D02fl7ET
BFS22A
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se5020
Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES
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2SA1464
2SC3739
se5020
marking R1L
mot-10
2SA1464
2SC3739
2SC373
MECM
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PDF
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BFW61
Abstract: No abstract text available
Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA
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BFW61
btj53T31
357T2
BFW61
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2N3904
Abstract: MPS6520 10v200
Text: SAMSUNG SEMICONDUCTOR INC 1_*»E D MPS6520 j ? ci { , 4 1 4 2 0007325 fl | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=250C) r
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MPS6520
625mW
T-29-21
2N3904
100/iA,
100KHz
10KHz
10v200
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PDF
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BST74A
Abstract: No abstract text available
Text: BST74A J _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and line-transformer
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BST74A
O-92s.
rnA/10
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