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    TRANSISTOR J4S Search Results

    TRANSISTOR J4S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J4S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    ETK85-050

    Abstract: 10T2 B-28 B-30 B-31 M102 T151 Transistor B29
    Text: ETK85-050 75a '± '< 7 — • JU POWER TRANSISTOR MODULE : Features • 7 U— V .> 7 f f *( # —' F fiM t • h F E ^ f ljl' • Including F re e w h e e lin g Diode High D C Current Gain Insulated Type • ff iiÉ I A pplications • "j + 's V Power Sw itching


    OCR Scan     		PDF ETK85-050 E82988 11S19^ I95t/R89 10T2 B-28 B-30 B-31 M102 T151 Transistor B29

    2SD1809

    Abstract: hFE-15000
    Text: 2SD1809 Is ~7 > y Z- %/Transistors 2SD1809 x * V N P N y '; 3 > h 7 > y ^ Epitaxial Planar NPN Silicon Transistor Darlington ^ l l ^ ^ t i f f l / M e d i u m Power Amp. • 1) H fti 7 j- ;i@ /D im e n si°n s (U n it: mm) h>ig*KTi#ihFET'<fc&u hFE= 15000(Typ.)


    OCR Scan     		PDF 2SD1809 2SD1809 hFE-15000

    gl393

    Abstract: GL-393 GL-393-A avr shematic GL393A zero crossing detector GL 393
    Text: @ LG Semicon. Co. LTD._ GL393/393A LOW POWER, LOW OFFSET VOLTAGE DUAL COMPARATORS Description Pin Configuration The GL393 consists of two independent precision voltage comparators designed specifically to operate from a single power supply. Operation from split power supplies is also


    OCR Scan     		PDF GL393/393A GL393 10-Comparator GG0471M 300BSC 100BSC GL-393 GL-393-A avr shematic GL393A zero crossing detector GL 393

    Molectron Detector

    Abstract: molectron J3-09 J9119A molectron J3-05 J3S-10 Molectron j3 molectron J305 boxcar joulemeter
    Text: Features im iiiiiim J3/J4/J3S Series Pyroelectric/Silicon Joulemeter a Wide dynamic range fJ to J a High rep rate to 20 kHz a Large area to 1 cm2 a NIST traceable CAL in V/mJ and V/nJ a Spectral range UM, VIS, Far IR a Excellent EMI shielding a Use directly with oscilloscope


    OCR Scan     		PDF J3-05. JS25Q Molectron Detector molectron J3-09 J9119A molectron J3-05 J3S-10 Molectron j3 molectron J305 boxcar joulemeter

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


    OCR Scan     		PDF

    ED 47 EMI CHIP FILTER

    Abstract: microchannel
    Text: = = = '= Preliminary P/N IBM30CMTA5PRLQAAAT P/N IBM30CMTA5P0PLAAAT Token Ring 25Mbps PMD MODUL E I n t r o d u c t io n General Description This PMD Module is designed to be a direct replace­ ment for the previous IBM Token Ring PMD module, as well as to provide turther board component cost


    OCR Scan     		PDF IBM30CMTA5PRLQAAAT IBM30CMTA5P0PLAAAT 25Mbps ED 47 EMI CHIP FILTER microchannel

    schematic diagram tv sony kv 2197

    Abstract: scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76
    Text: HOW TO USE THIS BOOK If you know the MODEL NUMBER, Use the Model Index on the INSIDE FRONT COVER. If you know the PRODUCT TYPE, Use the TABBED TABLE OF CONTENTS on page v. Or, use the SELECTION GUIDE TABLES at the front of each tabbed section. If you know the M ODEL


    OCR Scan     		PDF TX712 TX811 schematic diagram tv sony kv 2197 scheme tv color tucson LOG100 ADC600 ISO106 sony ccd ADC-817 adc817 SDM857 SHC76

    m6258

    Abstract: transistor fst 239 MSM6258 ym22 SC2305 SC4M MSM6258VGSK B2N transistor
    Text: O K I Semiconductor M SM 6258/M SM 6258V ADPCM SPEECH PROCESSOR FOR SOLID STATE RECORDER GENERAL DESCRIPTION T h e M S M 6258 is a com p lex and high ly in te­ g rated A D P C M sp e ech p ro ce sso r, im p le ­ m en ted in C M O S tech n o log y for low pow er


    OCR Scan     		PDF 6258/M MSM6258/MSM6258V MSM80C85 m6258 transistor fst 239 MSM6258 ym22 SC2305 SC4M MSM6258VGSK B2N transistor