Untitled
Abstract: No abstract text available
Text: CM PA K -4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
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BFG424W
OT343R
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Untitled
Abstract: No abstract text available
Text: CM PA K-4 BFG424W NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
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BFG424W
OT343R
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MAT02-000C
Abstract: MAT02
Text: Low-Noise Matched Dual Monolithic Transistor MAT02 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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MAT02
MIL-PRF-38534,
com/MAT02
ASD0012815
6-JUN-2009
MAT02-000C
MAT02
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MAT03
Abstract: No abstract text available
Text: Low-Noise Matched Dual PNP Transistor MAT03 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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MAT03
MIL-PRF-38534,
com/MAT03
100uA.
ASD0012816
MAT03
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Untitled
Abstract: No abstract text available
Text: Tuesday, Mar 4, 2008 11:36 AM / Low-Noise Matched Dual PNP Transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified die manufactured on Analog Devices, Inc.’s QML certified line per MIL-PRF-38534 class K except as modified herein.
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MAT03
MIL-PRF-38534
com/MAT03
MIL-STD-883
ASD0012816
100uA.
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MAT02
Abstract: mat-02
Text: Thursday, Mar 13, 2008 2:14 PM / Low-Noise Matched Dual Monolithic Transistor MAT02 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as
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MAT02
MIL-PRF-38534,
com/MAT02
MIL-STD-883
ASD0012815
MAT02
mat-02
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Untitled
Abstract: No abstract text available
Text: D2 PA K PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified
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PSMN057-200B
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SD1492
Abstract: M 208
Text: SD1492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG. A A FULL R TJ .050 NOM. G H I J K
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SD1492
SD1492
M 208
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK6C1R5-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 5 August 2011 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and
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BUK6C1R5-40C
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MAT03-903H
Abstract: "Dual PNP Transistor" MAT03-903L GDFP1-F10 "PNP Transistor" Dual PNP Transistor MAT03 903h
Text: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
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MAT03
MIL-PRF-38535
com/MAT03
ASD0011414
MAT03-903H
"Dual PNP Transistor"
MAT03-903L
GDFP1-F10
"PNP Transistor"
Dual PNP Transistor
MAT03
903h
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GDFP1-F10
Abstract: MAT03
Text: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.
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MAT03
MIL-PRF-38535
com/MAT03
ASD0011414
GDFP1-F10
MAT03
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MSK5983RH
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY RAD HARD POSITIVE, 2.25A, LDO, SINGLE RESISTOR ADJ VOLTAGE REGULATOR 5983RH FEATURES: Manufactured using Space Qualified RH3083 Die MIL-PRF-38534 Class K Processing & Screening Total Dose Hardened to TBD Krads Si (Method 1019.7 Condition A)
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MIL-PRF-38534
5983RH
RH3083
310mV
MSK59833
MSK5983RH
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. RAD HARD POSITIVE, 2.8A, LDO, SINGLE RESISTOR ADJ VOLTAGE REGULATOR 5983RH FEATURES: Manufactured using Space Qualified RH3083 Die MIL-PRF-38534 Class K Processing & Screening Total Dose Hardened to TBD Krads Si (Method 1019.7 Condition A)
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MIL-PRF-38534
5983RH
RH3083
310mV
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. RAD HARD POSITIVE, 2.8A, LDO, SINGLE RESISTOR ADJ VOLTAGE REGULATOR 4707 Dey Road Liverpool, N.Y. 13088 5983RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH3083 Die MIL-PRF-38534 Class K Processing & Screening
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MIL-PRF-38534
5983RH
RH3083
300mV
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transistor k 385
Abstract: No abstract text available
Text: CSB1626 CSD2495 CSB1626 PNP Plastic Power Darlington Transistor CSD2495 NPN Plastic Power Darlington Transistor OIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 t ,15 1,40 3.75 3,68 2.29 2.79 2.54 3.43 0,56 12,70 14,73 6,35 2.92 2.03 31.24 7 DEG 14.42
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CSB1626
CSD2495
transistor k 385
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transistor k 385
Abstract: No abstract text available
Text: CSB1626 CSD2495 CDIL CSB1626 PNP Plastic Power Darlington Transistor CSD2495 NPN Plastic Power Darlington Transistor & 0 —J g - a. DiM A B C D E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1.15 1.40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73
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CSB1626
CSD2495
CSD2495
transistor k 385
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Untitled
Abstract: No abstract text available
Text: h7 > y UMS1N/FMS1A $ / T ransistors U M S1N F M S 1A x o. T^U S i - ; u K h 7 > V * £ /D u a l Mini-Mold Transistor pnp Epitaxial Planar PNP Silicon Transistor —Jß'J'it-Si-ititSffl/General Small Signal Amp. • ^HBrfsiBl/Dimensions U nit: mm 1) x — / f — S — i
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HCPL-6531
Abstract: HP optocoupler
Text: ¥hn\ H E W L E T T m LKM P A C K A R D Transistor Output, Hermetically Sealed Optocoupler Technical Data Features • Manufactured and Tested on a MIL-STD-1772 Certified Line • QML-MIL-H-38534 • Performance Guaranteed Over -55°C to +125C Ambient Temperature
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MIL-STD-1772
QML-MIL-H-38534
MIL-STD-883
6N135/6,
HCPL-2530/31
1430-CMO
D-7030
HCPL-6531
HP optocoupler
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OC40 PHOTO COUPLER GENERAL DESCRIPTION The 0 0 4 0 is a photo coupler, which combines a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package. With a response as fast as 100ns. FEATURES
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100ns.
Outpu18
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Untitled
Abstract: No abstract text available
Text: C 7 SGS-THOMSON * 7 /. « f ô t m iC T M SD1275 Q ! RF & MICROWAVE TRANSISTOR S VHF MOBILE APPLICATIONS . . . . 160 MHz 13.6 VOLTS COMMON EMITTER Pout = 40 W MIN. WITH 9.0 dB GAIN PIN CONNECTION 1 k- 4 2 - I DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon
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SD1275
SD1275
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Transistor C1061
Abstract: NPN Transistor C1061 C1061 transistor transistor c1047 power Transistor C1061 C1061 npn c1050 transistor C1057 EL 4N35 035 MCT8 opto
Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR
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MCT210
MCT26
MCT66
Transistor C1061
NPN Transistor C1061
C1061 transistor
transistor c1047
power Transistor C1061
C1061 npn
c1050 transistor
C1057
EL 4N35 035
MCT8 opto
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DIODE a40
Abstract: No abstract text available
Text: *57 4 40 4 40 SGS-THOMSON iL iO M K I TYPE STP4NA40 STP4N A40FI stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS on Id 400 V 400 V < 2a < 2a 4 A 2.8 A • T Y P IC A L Ros(on) = 1-7 . . ■ ■ . ■ ± 30V GATE TO SOURCE VOLTAGE RATING
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STP4NA40
A40FI
DIODE a40
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2SC497
Abstract: 2sc498 2SA497 2sc97 2SC497-R 2SA498 2SC49 Produced by Perfect Crystal Device Technology
Text: 97 98 o ’ k ^ j 3 y N P N x ^ ^ p i v m ^ S IL IC O N NPN EPITAXIAL ^ y v 2 .5 > P C T 75^ TRANSISTOR (PCT Medium Pow er A m p l i f i e r A p p l i c a t i o n s . U n it VCEO = Ü5 i t £E ~C-to 80V ( 2 S C 4 9 7 ) VCE ( s a t ) = 0 .2 V (T y p ,)
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2SC497)
2SA497,
2SA498
2SA497
2SA498.
2SC498
2SC497
la39UAX.
a25MAX.
2sc498
2sc97
2SC497-R
2SA498
2SC49
Produced by Perfect Crystal Device Technology
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8c 617 transistor
Abstract: STK400-280 stk401-290 MG-200 STK400-200 STK401 STK401-050 STK400-020 A0037B
Text: Ordering number: EN & 5305 Thick Film Hybrid 1C I ' ! no. *5 385 II S T K 4 0 1 -2 9 0 / / 2ch AF Power Amplifier Split Power Supply 50W + 50W,THD = 0.08% Preliminary Overview Package Dimensions The STK 401-290 is a 2-channel audio power amplifier IC that supports 6/3Q output load impedances. It is fully pin
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STK401
STK401-290
STK400-X00
STK401-X00
8c 617 transistor
STK400-280
MG-200
STK400-200
STK401-050
STK400-020
A0037B
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