Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K3568 Search Results

    TRANSISTOR K3568 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K3568 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor compatible k3568

    Abstract: k3568 transistor k3568 K3568 data 2SK3568 K3568 equivalent 2SK3568 equivalent k3568 transistor 2sk3568 datasheet
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3568 transistor compatible k3568 k3568 transistor k3568 K3568 data 2SK3568 K3568 equivalent 2SK3568 equivalent k3568 transistor 2sk3568 datasheet PDF

    2sk3568

    Abstract: transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 2sk3568 transistor k3568 K3568 K3568 equivalent 2SK3568 equivalent k3568 transistor K3568 data K3568 DATASHEET k356 Field Effect Transistor Silicon N Channel MOS Typ PDF

    transistor k3568

    Abstract: k3568 2SK3568 K3568 data k3568 transistor
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 k3568 2SK3568 K3568 data k3568 transistor PDF

    K3568 data

    Abstract: transistor k3568 k3568 toshiba k3568 k3568 transistor
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 data transistor k3568 k3568 toshiba k3568 k3568 transistor PDF

    transistor k3568

    Abstract: k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 k3568 2SK3568 K3568 equivalent k3568 transistor 2SK3568 equivalent K356 2sk3568 datasheet PDF

    K3568

    Abstract: transistor k3568 2SK3568 K3568 equivalent
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 transistor k3568 2SK3568 K3568 equivalent PDF

    K3568 data

    Abstract: transistor k3568 K3568 toshiba k3568 2SK3568 k356 k3568 transistor
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 K3568 data transistor k3568 K3568 toshiba k3568 2SK3568 k356 k3568 transistor PDF

    transistor k3568

    Abstract: No abstract text available
    Text: 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3568 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3568 transistor k3568 PDF