MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2002. 9. 12 Revision No : 2 1/2
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KTA1267
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.
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KTA1267
KTC3199.
-100mA,
-10mA
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KTA1267L
Abstract: KTC3199L
Text: SEMICONDUCTOR KTA1267L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B ᴌExcellent hFE Linearity A : hFE 0.1mA /hFE(2mA)=0.95(Typ.). O F ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.). ᴌComplementary to KTC3199L. H G
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KTA1267L
KTC3199L.
KTA1267L
KTC3199L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTA1267 TRANSISTOR PNP TO-92S FEATURES Power dissipation PCM: 1. EMITTER 0.4 W (Tamb=25℃) 2. COLLECTOR Collector current -0.15 A ICM: Collector-base voltage -50 V
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O-92S
KTA1267
O-92S
-100mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
KTA1267
KTC3199
-100mA
-10mA
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KTA1267
Abstract: KTC3199 KTA1267 GR
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.
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KTA1267
KTC3199.
KTA1267
KTC3199
KTA1267 GR
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transistor KTC3199
Abstract: KTA1267 KTC3199 transistor KTA1267
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G Complementary to KTC3199.
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KTA1267
KTC3199.
transistor KTC3199
KTA1267
KTC3199
transistor KTA1267
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KTA1267
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.
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KTA1267
KTC3199.
-100mA,
-10mA
O-92M
KTA1267
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to KTA1267 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92S
KTC3199
KTA1267
100mA
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Untitled
Abstract: No abstract text available
Text: KTA1267 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S 1.5±0.2 FEATURE 3.1±0.2 4.0±0.2 1.27 Typ. 0.76±0.1 1 Collector-base voltage V(BR)CBO = -50 V 2 3 15.3±0.2
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KTA1267
O-92S
01-Jun-2002
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KTA1267L
Abstract: KTC3199L
Text: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).
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KTC3199L
KTA1267L.
100Hz,
100mA,
KTA1267L
KTC3199L
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).
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KTC3199L
KTA1267L.
100Hz,
100mA,
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transistor KTC3199
Abstract: KTA1267 KTC3199 KTC3199 GR
Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ᴌHigh DC Current Gain : hFE=70~700. O F ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
transistor KTC3199
KTA1267
KTC3199
KTC3199 GR
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KTC3199 GR
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ・High DC Current Gain : hFE=70~700. O F ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ・Low Noise : NF=1dB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
100mA,
O-92M
KTC3199 GR
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KTA1267
Abstract: KTC3199
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1267 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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OCR Scan
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KTA1267
KTC3199.
T0-92M
KTA1267
KTC3199
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KTA1267L
Abstract: KTC3199L
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L.
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KTA1267L
KTC3199L.
T0-92M
KTA1267L
KTC3199L
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transistor wu1
Abstract: transistor wu1 5
Text: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)
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KTA1267L
KTC3199L.
transistor wu1
transistor wu1 5
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transistor KTC3199
Abstract: KTA1267 KTC3199 ktc3199 y
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.).
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KTC3199
KTA1267.
transistor KTC3199
KTA1267
KTC3199
ktc3199 y
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KTA1267L
Abstract: KTC3199L hFE transistor 200
Text: SEMICONDUCTOR TECHNICAL DATA KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent h FE Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.).
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OCR Scan
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KTC3199L
KTA1267L.
T0-92M
100mA,
100Hz,
KTA1267L
KTC3199L
hFE transistor 200
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KTC3199
Abstract: KTA1267 ktC3199 transistor
Text: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3199
KTA1267.
T0-92M
KTC3199
KTA1267
ktC3199 transistor
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