TRANSISTOR L Search Results

TRANSISTOR L Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.	Original	OT-363 QW-R218-024 DUAL TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network	Original	LDTA124EET1 SC-89	PDF
EE-125 Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor" Text: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor	Original	KDT5001A KDT5001A EE-125 photo transistor high current photo transistor PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.	Original	OT-26 QW-R218-018	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.	Original	OT-26 QW-R218-020	PDF
free IC npn transistor Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor	PDF
n24 transistor Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are	Original	MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017	PDF
2SA1743 Abstract: C11531E Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1743 2SA1743 C11531E	PDF
2SD1581 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is	Original	2SD1581 2SD1581	PDF
PA1476 Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134	PDF
2SA1742 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal	Original	2SA1742 2SA1742 O-220 O-220)	PDF
2SA1741 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1741 2SA1741	PDF
IC-3523 Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and	Original	PA1458 PA1458 PA1458H IC-3523 IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array	PDF

NEC 2sc4552 Abstract: 2SC4552 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4552 2SC4552 NEC 2sc4552	PDF
uPA1456H Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1456 PA1456 PA1456H uPA1456H IC-3521 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY	PDF
D1615 Abstract: transistor ab2 12 Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12	PDF
2SD2402 Abstract: transistor 2sD2402 Transistor Marking EY Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2403 2SD2403 2SB1572	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
2SC3603 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise	OCR Scan	2SC3587	PDF

TRANSISTOR L Search Results

TRANSISTOR L Result Highlights (5)

TRANSISTOR L Datasheets Context Search

DUAL TRANSISTOR

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EE-125

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free IC npn transistor

n24 transistor

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2SA1743

2SD1581

PA1476

2SA1742

2SA1741

IC-3523

NEC 2sc4552

uPA1456H

D1615

2SD2402

Untitled

MCT8 opto

mcl610

2SC3603

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