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    TRANSISTOR LN 1B Search Results

    TRANSISTOR LN 1B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LN 1B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Magnetic card reader writer schematics

    Abstract: transistor marking code SOT-23 2FX Ferrite core 13.56 MHz RFID tag inductor antennas an710 cross reference HF RFID loop antenna design planar spiral coil up/AN707 RFID IRl510 125khz RFID schematic oscilloscope schematic EAS 200
    Text: microID 13.56 MHz RFID System Design Guide NEW CUSTOMER NOTIFICATION SYSTEM Register on our web site www.microchip.com to receive the most current information on our products.  2004 Microchip Technology Inc. DS21299E DATA SHEET MARKINGS Microchip uses various data sheet markings to designate each document phase as it relates to the product development stage. The markings appear at the bottom of the data sheet, between the copyright and document and page


    Original     		PDF DS21299E p34-8870 DS21299E-page Magnetic card reader writer schematics transistor marking code SOT-23 2FX Ferrite core 13.56 MHz RFID tag inductor antennas an710 cross reference HF RFID loop antenna design planar spiral coil up/AN707 RFID IRl510 125khz RFID schematic oscilloscope schematic EAS 200

    aslk pro kit

    Abstract: J201 spice model disadvantages of monostable multivibrator diode db3 c209 DC-DC Converter Burr-Brown 700 ANALOG SYSTEM LAB KIT PRO HD145 TL082 opamp
    Text: Analog System Lab Kit PRO MANUAL Table of contents Introduction 9 Analog System Lab 10 Organization of the Analog System Lab Course 11 Lab Setup 12 System Lab Kit ASLK PRO - An overview 13 Hardware 13 Software 13 Getting to know ASLK PRO 14 Organization of the Manual


    Original     		PDF

    lm7805cv

    Abstract: METAL DETECTOR PROGRAM PIC16F84 planar spiral coil Ferrite core 13.56 MHz RFID tag inductor antennas 5043cx100r0j PSK reader RFID FSK RFID reader SOURCE CODE ,microchip PG103001 DS00680C 4-henry choke
    Text: microID 125 kHz RFID System Design Guide  2004 Microchip Technology Inc. DS51115F DATA SHEET MARKINGS Microchip uses various data sheet markings to designate each document phase as it relates to the product development stage. The markings appear at the bottom of the data sheet, between the copyright and document and page


    Original     		PDF DS51115F full34-8870 DS51115F-page lm7805cv METAL DETECTOR PROGRAM PIC16F84 planar spiral coil Ferrite core 13.56 MHz RFID tag inductor antennas 5043cx100r0j PSK reader RFID FSK RFID reader SOURCE CODE ,microchip PG103001 DS00680C 4-henry choke

    YTFP452

    Abstract: No abstract text available
    Text: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 0017Tflb YTFP452 IDSS-250uA VDS-500V Ijj-250uA Te-25Â RGSm20kfi) Vddn210V VGS-10V Ta-25< YTFP452

    k118

    Abstract: 2SK118 condenser microphone 20hz
    Text: TO SH IBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS • High Breakdown Voltage VG D S = - 50V • High Input Impedance Í G S S - - ln A Max. (V q s = -3 0 V )


    OCR Scan     		PDF 2SK118 100kn, k118 2SK118 condenser microphone 20hz

    TRANSISTOR 1300 1b

    Abstract: No abstract text available
    Text: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR


    OCR Scan     		PDF YTFP452 IDSS-250uA VDS-500V 250uA Ta-25Â IDR-12A 00A/us TRANSISTOR 1300 1b

    MG25N2YS1

    Abstract: mg25n2
    Text: TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA D IS C R E T E / O P T O TO SH IBA P E I ‘ìCHTgSO 0 0 1blfc,5 D I 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG25N2YS1 \S03G05 EGA-MG25K MG25N2YS1 mg25n2

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


    OCR Scan     		PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    dallas 2501

    Abstract: transistor d2624 ULN2003A application relay driver ULN2003A ULN2006A ULN2003A relay driver sn75465 d2624 DARLINGTON ARRAYS transistor d2624 ok
    Text: ULN2001A THRU ULN2005A DARLINGTON TRANSISTOR ARRAYS D 2 6 2 4 , D E C E M B E R 1 9 7 6 - R E V IS E D S E P T E M B E R 1 9 8 6 HIG H-VO LTAG E HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output D OR N P AC KA G E {TO P V IE W )


    OCR Scan     		PDF ULN2001A ULN2005A D2624, 1976-REVISED 500-mA ULN2001A, ULN2002A, ULN2003A, ULN2004A, dallas 2501 transistor d2624 ULN2003A application relay driver ULN2003A ULN2006A ULN2003A relay driver sn75465 d2624 DARLINGTON ARRAYS transistor d2624 ok

    LN2004A IC

    Abstract: LN2004 LN2004A LN 2003a LN2003A
    Text: ULN2001A THRU ULN2005A DARLINGTON TRANSISTOR ARRAYS D 2 6 2 4 , DECEMBER 1 9 7 6 REVISED SEPTEMBER 1986 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 5 0 0-m A Rated Collector Current Single Output D OR N PACKAGE (T O P V IE W ) High-Voltage Outputs . . . 5 0 V


    OCR Scan     		PDF ULN2001A ULN2005A ULN200SA ULN2003A ULN2005A ULN2004A LN2004A IC LN2004 LN2004A LN 2003a LN2003A

    74LSxx

    Abstract: No abstract text available
    Text: FEB 2 4 P relim in ary P ro d u ct S p e c ific a tio n s L in ear In teg rated C ircu R L D A 80 Raytheon RLDA80 Analog Digital Macrocell Array General Features • ■ ■ ■ ■ ■ ■ ■ 8 Analog Macrocells


    OCR Scan     		PDF RLDA80 kQ/100 10/91-H-2 1/92-G-5M 74LSxx

    ULN2003 ac

    Abstract: ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration
    Text: MARCH 1982 ANALO G DIVISION ULN2001/03/04 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEMATICS PIN CONFIGURATION These high-voltage, h ig h -cu rre n t D arling ­ ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on


    OCR Scan     		PDF ULN2001/03/04 600mA ULN-2001 ULN2003 ac ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration

    zsao 341

    Abstract: BSP124 zsa1 PCA1070 PCA1070P PCA1070T N-Channel depletion mos piezo microphone preamplifier diode PJ 41 MG ll-41 diode
    Text: Preliminary specification Philips Semiconductors Multistandard Programmable Analog CMOS Transmission 1C PCA1070 FEATURES • Line interface with: - Voltage regulator with programmable DC voltage drop - Programmable set impedance - Output to control an external switching MOS


    OCR Scan     		PDF PCA1070 711062b zsao 341 BSP124 zsa1 PCA1070 PCA1070P PCA1070T N-Channel depletion mos piezo microphone preamplifier diode PJ 41 MG ll-41 diode

    uln buffer

    Abstract: ic. uln 2003 Darlington pair IC single Darlington pair IC high current ULN2003 PIN configuration high current Darlington pair IC ULN2003 ULN2003 ac VLN 2003 uln series
    Text: ANALO G DIVISION MARCH 1982 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEM ATICS These high-voltage, h ig h -cu rre n t D arling ­ ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on


    OCR Scan     		PDF ULN2001/03/04 600mA ULN-2001 ULN-2003 ULN-2003 ULN-2004 ULN2003 ULN2004 uln buffer ic. uln 2003 Darlington pair IC single Darlington pair IC high current ULN2003 PIN configuration high current Darlington pair IC ULN2003 ULN2003 ac VLN 2003 uln series

    transistor LN 1B

    Abstract: 1B transistor
    Text: T e m ic TELEFUNKEN Semiconductors Switching Characteristics By using a transistor as a switch, it has to be kept in mind that in the transition from off-state to on-state the signal does not respond instantaneously even with abrupt changes in control values. The output signal is not only


    OCR Scan     		PDF

    JB marking transistor

    Abstract: transistor marking JB MMBT5550 marking JB
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic


    OCR Scan     		PDF MMBT5550 10/iA, JB marking transistor transistor marking JB marking JB

    2N4237

    Abstract: 2N4237 MOTOROLA 2n4239
    Text: MOTOROLA SC XSTRS/R F 12E D I fc»3b7ES4 □Gflb4G5 1 | M A X I M U M R A T IN G S Sym bol 2N4237 2 N 4 23 8 2 N 4 23 9 Unit Collector-Emitter V oltage VCEO 40 60 80 V dc Collector-Base Voltage Vc b o 50 80 100 R ating Emitter-Base V oltage Vebo V dc Ib c


    OCR Scan     		PDF 2N4237 2N4237 2N4239 O-205AD) 2N4237 MOTOROLA 2n4239

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN 2966B _ i SAKYO 2 SC 3895 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i F e a tu re s • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V).


    OCR Scan     		PDF 2966B 100ns 2039D 62695TS /N291MI1/8049MO, GEQ354 2SC3895

    3578am

    Abstract: Pnp transistor smd ba rn 3578AN transistor smd ba rn D1950 1n5819 smd lm1570
    Text: Semiconduc 0 T L M 1 578A /LM 2578A /LM 3578A S w itching R eg u lato r F eat ur es The LM1578A is a switching regulator which can easily be set up tor such DC-to-DC voltage conversion circuits as the buck, boost, and inverting contigurations. The LM1578Afea1ures a unique comparator input stage which not only has


    OCR Scan     		PDF 78A/LM2578A/LM3578A LM1578A LM1578Afea1ures 3578am Pnp transistor smd ba rn 3578AN transistor smd ba rn D1950 1n5819 smd lm1570

    Diode SY 345

    Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
    Text: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­


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    TCA220

    Abstract: TCA770D lg washing machine circuit diagram TCA770A SAA1114 SAK150BT TCA410A tda1540 TEA1016 tba915
    Text: F U N C T IO N A L A N D N U M E R IC A L IN D EX M A IN T E N A N C E T Y P E L IS T INDEX 7 V SELECTION GUIDE BY FUNCTION type number page function OPERATIONAL AMPLIFIERS TCA220 TCA520B; D TEA1016 35 41 47 triple operational amplifier operational amplifier


    OCR Scan     		PDF TCA220 TCA520B; TEA1016 TBA673 TCA240; TBA915G TCA980G TCA770A; TDB1080 TEA1039 TCA220 TCA770D lg washing machine circuit diagram TCA770A SAA1114 SAK150BT TCA410A tda1540 TEA1016 tba915

    WESTINGHOUSE transistor

    Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
    Text: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3


    OCR Scan     		PDF 2N2757-78+ 30-ampere for2N2760, 2N2766, 2N2772 2N2778. C/2116/DB; C/2117 WESTINGHOUSE transistor Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse

    BUV89

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E » bbSB'lBl DDBflMTO TBS BUV89 IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended fo r use in AC m otor control systems from three-phase mains.


    OCR Scan     		PDF BUV89 bb53T31 7Z88401 BUV89

    1B47

    Abstract: SD1463
    Text: T SGS-THOMSON *7#. mW IUiOT@«i SD1463 TCC0204-125 rz RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ ■ ■ ■ 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION ■ P o u t = 125 W MIN. WITH 7.0 dB GAIN PIN CONNECTION 2 1 1 2 DESCRIPTION


    OCR Scan     		PDF SD1463 TCC0204-125) SD1463 1B47