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    TRANSISTOR LNW SMD Search Results

    TRANSISTOR LNW SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LNW SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor lnw smd

    Abstract: No abstract text available
    Text: Pulse-load Battery Monitor D escription T h e C S -2 5 1 6 is d e s ig n e d fo r u s e in b a t­ te ry p o w e re d m e d ic a l, s e c u r ity , o r e n v ir o n m e n ta l s y s te m s w h e r e p r io r n o tific a tio n o f im p e n d in g p o w e r


    OCR Scan     		CS-2516 CS-2516N8 CS-2516D8 transistor lnw smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		HX84050 1x106 1x101 1x109 0GD1755 PDF