mark G1 SOT-23
Abstract: 2N5551 g1 2N5551 KST5551
Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 Mark: G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KST5551
350mW
OT-23
2N5551
mark G1 SOT-23
2N5551 g1
KST5551
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Untitled
Abstract: No abstract text available
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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FFB2227A
Abstract: FFB2222A FFB2907A FMB2227A SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
FFB2222A
FFB2907A
FMB2227A
SC70-6
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Untitled
Abstract: No abstract text available
Text: FFB2227A / FMB2227A FMB2227A FFB2227A E2 B2 C1 SC70-6 Mark: .AA Dot denotes pin #1 C2 TRANSISTOR TYPE pin #1 E1 B1 C2 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 SuperSOTä-6 Mark: .001 pin #1 B1 E2 B2 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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FFB2227A
FMB2227A
FFB2227A
SC70-6
FFB2222A
FFB2907A
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audio transistor 274
Abstract: MJ*15033 thermaltrak NJL1302D NJL3281D mje15033 MJL1302A MPSa06 equivalent 1N4148 MJE15032
Text: AND8196/D ThermalTrakt Audio Output Transistors Prepared by: Mark Busier ON Semiconductor http://onsemi.com APPLICATION NOTE Each of the ThermalTrak audio output devices incorporates Ultrafast diode technology as the temperature sensing device along with the audio output transistor.
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AND8196/D
O-220)
audio transistor 274
MJ*15033
thermaltrak
NJL1302D
NJL3281D
mje15033
MJL1302A
MPSa06 equivalent
1N4148
MJE15032
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KSC1815YTA
Abstract: ksc1815
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
KSC1815YTA
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Untitled
Abstract: No abstract text available
Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
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KSC1815
KSA1015
KSC1815YTA
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KSA1015YTA
Abstract: No abstract text available
Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1015GRTA
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KSA1015
KSC1815
KSA1015GRTA
KSA1015YTA
KSA1015YTA
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Untitled
Abstract: No abstract text available
Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBT5401
OT-23
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MMBT5401
Abstract: mark B1 sot23
Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBT5401
OT-23
MMBT5401
mark B1 sot23
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mmbt5401
Abstract: No abstract text available
Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBT5401
OT-23
mmbt5401
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y 331 Transistor
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
y 331 Transistor
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PN918
Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol
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MMBT918
PN918
OT-23
PN918
MMBT918
mark 3b
RF TRANSISTOR SOT23 5
P431
PN918 transistor
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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CBVK741B019
Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
CBVK741B019
F63TNR
MMBT918
PN2222N
RF 107
transistor tc 144
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mmbt918
Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
mmbt918
Intermediate frequency Semiconductor RF
CBVK741B019
F63TNR
PN2222N
npn transistor wc
14inch
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MPSH10
Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
MMBTH10 Spice Model
NPN power transistor spice
y-parameter
MMBTH10
TRANSISTOR C 3223
MPS-H10
MPSH10 s parameters
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MPSH10 fairchild transistor
Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
MPSH10 fairchild transistor
MMBTH10 Spice Model
MPS-H10
MMBTH10
TRANSISTOR C 3223
1358p
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TRANSISTOR C 3223
Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
TRANSISTOR C 3223
MMBTH10 Spice Model
NPN power transistor spice
MMBTH10
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Untitled
Abstract: No abstract text available
Text: FMB1020 FMB1020 C2 E1 C1 pin #1 B1 E2 B2 TRANSISTOR TYPE SuperSOTä-6 Mark: .004 Dot denotes pin #1 C1 B1 E1 NPN C2 B2 E2 PNP NPN & PNP General Purpose Amplifier This complementary device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10
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FMB1020
FMB100
FMB200
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Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
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MMBT918
PN918
OT-23
400il,
PN918
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PN918 transistor
Abstract: No abstract text available
Text: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol
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PN918
MMBT918
PN918
PN918 transistor
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