TL1451 Application note
Abstract: T1451A TL1451ACN TL1451 equivalent
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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TL1451A
SLVS024E
TL1451A
TL1451 Application note
T1451A
TL1451ACN
TL1451 equivalent
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PDF
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transistor 1BT
Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification
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Original
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M3D102
BC846W;
BC847W;
BC848W
OT323
BC856W,
BC857W,
transistor 1BT
1Ft SOT323
1Ft TRANSISTOR
transistor 1Ht
BC847CW1GT
transistor 1kt
BC846W
1Bt 65
1kt marking code
npn 1bt
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PDF
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2SD1328
Abstract: transistor marking 1Dt
Text: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 0.95 0.4 –0.05 2.9 –0.05 3 2 Symbol Ratings Unit VCBO
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2SD1328
2SD1328
transistor marking 1Dt
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PDF
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T1451A
Abstract: t1451
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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Original
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TL1451A
SLVS024E
TL1451A
T1451A
t1451
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PDF
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military part marking symbols triangle
Abstract: am/Uf 89
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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Original
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TL1451A
SLVS024E
military part marking symbols triangle
am/Uf 89
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PDF
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transistor 1BT
Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification
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Original
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M3D102
BC846W;
BC847W;
BC848W
OT323
BC856W,
BC857W,
transistor 1BT
transistor 1Ht
1Ft SOT323
1kt marking code
BC846BW
transistor 1BT 88
marking code 1gt
TRANSISTOR 1gt
BC846W
BC847W
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PDF
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TL1451ACN equivalent
Abstract: TL1451ACN TL1451ACD
Text: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK
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Original
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TL1451A
SLVS024E
PMP00-062
PMP009
PMP146
TL1451AEVM-166
TL1451ACN equivalent
TL1451ACN
TL1451ACD
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PDF
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2SD1328
Abstract: No abstract text available
Text: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 • Absolute Maximum Ratings 0.4±0.2 5° 0.65 1.9±0.1 2.90+0.20 -0.05 (Ta=25˚C) 10° Parameter
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Original
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2SD1328
2SD1328
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PDF
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2SD1328
Abstract: No abstract text available
Text: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 0.95 0.4 –0.05 2.9 –0.05 3 2 Symbol Ratings Unit VCBO
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Original
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2SD1328
2SD1328
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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PDF
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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TL1451
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
TL1451
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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Q100
Abstract: TL1451A TL1451A-EP TL1451AMDREP TL1451A-Q1 TL1451A equivalent
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
Q100
TL1451A
TL1451A-EP
TL1451AMDREP
TL1451A-Q1
TL1451A equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
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PDF
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scp soic
Abstract: TL1451A Q100 TL1451A-EP TL1451AMDREP TL1451A-Q1
Text: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support
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Original
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TL1451A-EP
SLVS614
scp soic
TL1451A
Q100
TL1451A-EP
TL1451AMDREP
TL1451A-Q1
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PDF
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marking code 1gt
Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
Text: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.
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OCR Scan
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BC846W;
BC847W;
BC848W
OT323
BC856W,
BC857W,
BC858W.
BC846W
BC846AW
BC846BW
marking code 1gt
transistor marking 1Dt
transistor 1kt
1Ft SOT323
1Gt transistor
BC847CW pin
1Ft TRANSISTOR
1GT MARKING
1Gt 27 marking code
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PDF
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KSA812
Abstract: KSC1623
Text: SAMSUNG S E M I C O N D U C T O R . INC KSC1623 14E D | ?TbMma □OQt.fl'm 1 | NPN EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY O SC SO T -2 3 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage
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OCR Scan
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KSC1623
KSA812
OT-23
KSA812
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^ tt-M O S V 2SK2782 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RdS ( O N ) -Û039O (Typ.)
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OCR Scan
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2SK2782
IDR--20A,
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PDF
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