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    TRANSISTOR MARKING CODE YR Search Results

    TRANSISTOR MARKING CODE YR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE YR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SG3081

    Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS


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    PDF SG3081J/883B SG3081 sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


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    PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    AD8212AL

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 12-02-08 C. SAFFLE Add device type 02 tested at low dose rate. Make changes to paragraphs 1.2.2, 1.5, 4.4.1c, 4.4.4.1, Table I and figure 1. - ro A REV SHEET REV A A A A SHEET 15 16 17 18 REV STATUS REV A


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    AD8212AL

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02 tested at low dose rate. Make changes to paragraphs 1.2.2, 1.5, 4.4.1c, 4.4.4.1, Table I and figure 1. - ro 12-02-08 C. SAFFLE B Add single event latchup (SEL) testing information. Delete device class M


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    smd TRANSISTOR H2 MARKING CODE

    Abstract: smd transistor h25 marking code H10 SMD Transistor SMD transistor MARKING CODE H25 smd transistor marking h10 smd marking H6 TRANSISTOR SMD MARKING CODE H2 MARKING CODE SMD IC marking h100 4953 ic 8 pin
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change for 1.3 collector-emitter voltage maximum limit. Change limits and conditions for base offset voltage, change in emitter-base offset, collector leakage, base leakage, current gain and gain match tests.


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    PDF CENTER701XA LM194H/883 smd TRANSISTOR H2 MARKING CODE smd transistor h25 marking code H10 SMD Transistor SMD transistor MARKING CODE H25 smd transistor marking h10 smd marking H6 TRANSISTOR SMD MARKING CODE H2 MARKING CODE SMD IC marking h100 4953 ic 8 pin

    qml-38535

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. Editorial changes throughout. – drw 01-01-16 Raymond Monnin The original first page of this drawing has been replaced. REV SHEET REV SHEET REV STATUS REV


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    marking A1 TRANSISTOR

    Abstract: 2PA1774 2PA1774Q 2PA1774R 2PA1774S 2PC4617 SC-75
    Text: 2PA1774 PNP general-purpose transistor Rev. 04 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features • Low current (max. 150 mA)


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    PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 marking A1 TRANSISTOR 2PA1774 2PA1774Q 2PA1774R 2PA1774S 2PC4617 SC-75

    marking A1 TRANSISTOR

    Abstract: 2PA1774 2PA1774Q 2PA1774R 2PA1774S 2PC4617 SC-75
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


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    PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S 2PA1774 marking A1 TRANSISTOR 2PA1774Q 2PA1774R 2PA1774S 2PC4617 SC-75

    stac2942

    Abstract: STAC2942B
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2942B 2002/95/EC STAC2942B STAC244B STAC2942 STAC2942BW

    transistor marking code QM

    Abstract: TRANSISTOR SMD MARKING CODE 5c transistor smd 24c QML-38535 E067 Transistors smd mark code QML38535 GDIP1-T16 HFA3127 MARKING CODE SMD IC
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R181-96. 96-07-10 M. A. FRYE B Drawing updated to reflect current requirements. - ro 01-12-03 R. MONNIN REV SHEET REV SHEET REV STATUS REV B B B B B B B B B OF SHEETS


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    PDF 5962-R181-96. 94-10-number HFA3127MJ/883 transistor marking code QM TRANSISTOR SMD MARKING CODE 5c transistor smd 24c QML-38535 E067 Transistors smd mark code QML38535 GDIP1-T16 HFA3127 MARKING CODE SMD IC

    transistor smd YR

    Abstract: SMD TRANSISTOR MARKING CODE YR yq smd transistor smd transistor marking lp TRANSISTOR SMD MARKING CODE X D marking code YR SMD ic TRANSISTOR SMD npn MARKING CODE YR 2PA1774QJ smd transistor marking Y.S transistor smd marking ys
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 2000 Dec 12 2001 Aug 03 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23


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    PDF M3D425 2PA1774J SCA73 613514/04/pp8 transistor smd YR SMD TRANSISTOR MARKING CODE YR yq smd transistor smd transistor marking lp TRANSISTOR SMD MARKING CODE X D marking code YR SMD ic TRANSISTOR SMD npn MARKING CODE YR 2PA1774QJ smd transistor marking Y.S transistor smd marking ys

    2SC5345SF

    Abstract: No abstract text available
    Text: 2SC5345SF NPN Silicon Transistor Description PIN Connection • RF amplifier Features 3 • High current transition frequency fT=550MHz Typ. , [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain


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    PDF 2SC5345SF 550MHz OT-23F KSD-T5C070-000 2SC5345SF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
    Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is


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    PDF MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes

    stac2942

    Abstract: No abstract text available
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


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    PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942BW STAC2942 DocID15501 stac2942

    OF IC 7909

    Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
    Text: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE


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    PDF BFG25AW BFG25AW/X; BFG25AW/XR OT343 OT343R BFG25AW/X BFG25AW/XR BFG25AW BFG25AW/X OF IC 7909 xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter marking code C1E marking c1e transistor BFG25W BFG25AWX

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information


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    PDF OT-223 Q67000-S215 E6327

    BF173

    Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages


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    PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40

    transistor marking CODE YR

    Abstract: transistor marking ac
    Text: Philips Semiconductors Preliminary specification PNP general purpose transistor FEATURES 2PA1774 PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification in


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    PDF 2PA1774 SC-75 2PC4617. MAM362 2PA1774Q 2PA1774R 2PA1774S SC-75) transistor marking CODE YR transistor marking ac

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    2PC4081

    Abstract: 2PC4081Q 2PC4081R 2PC4081S transistor ZR
    Text: N AMER P H ILIP S /D IS C R E TE b' î E 1^53^31 □□Sfilza 523 J> lÂPX Objectivespecification Philips Semiconductors 2PC4081 NPN general purpose transistor FEATURES • S-mini package • Low output capacitance, Cob = 2 pF typ. . DESCRIPTION NPN transistor in a plastic three lead


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    PDF 2PC4081 2PC4081Q 2PC4081R 2PC4081S 2PC4081 transistor ZR

    NPN transistor x11

    Abstract: RR2 marking C70 MARKING CODE
    Text: UM X11N Transistor, dual, NPN Features Dimensions Units : mm • available in UMT6 (UMT6) package • • package marking: X11 package contains two independent NPN transistors (2SC2059K) same size as UMT3 (UMT, C-70) so same placement machine can be used for both


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    PDF 2SC2059K) UMX11N UMX11N NPN transistor x11 RR2 marking C70 MARKING CODE

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


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    PDF 5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf

    GDIP1-T16

    Abstract: LM2595 qml38535 qml-38535
    Text: REVISIONS LTR DESCRIPTION APPROVED D A TE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A REV SHEET 8 PREPARED BY


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    PDF 5962-E051-97 T0047QÃ GDIP1-T16 LM2595 qml38535 qml-38535

    qml-38535

    Abstract: GDIP1-T16 S17 SMD TRANSISTOR SMD MARKING 2 HA BTA 612
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 4 5 PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE


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    PDF 5962-9e qml-38535 GDIP1-T16 S17 SMD TRANSISTOR SMD MARKING 2 HA BTA 612