transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
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mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
mps 1049
JB marking transistor
Marking H11 sot
marking JB sot23
JB MARKING SOT-23
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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TO263 7 1 LAND PATTERN
Abstract: No abstract text available
Text: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • AP1122 is a low dropout positive fixed-mode regulator with 1A output current capability. The product is specifically designed to provide well-regulated supply for low voltage IC applications such
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AP1122
OT223-3L,
O252-3L,
OT89-3L,
O263-3L
O220-3L
OT223-3L
O252-3L:
AP1122
TO263 7 1 LAND PATTERN
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Untitled
Abstract: No abstract text available
Text: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • 1.3V maximum dropout at full load current Fixed 1.2V±2% output voltage Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection
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AP1122
OT223-3L,
O252-3L,
OT89-3L,
O263-3L
O220-3L
OT223-3L
O252-3L:
AP1122
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Untitled
Abstract: No abstract text available
Text: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • 1.3V maximum dropout at full load current Fixed 1.2V± 2% output voltage Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection
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AP1122
OT223-3L,
O252-3L,
OT89-3L,
O263-3L
O220-3L
OT223-3L
O252-3L:
AP1122
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AP1122EG-13
Abstract: AP1122EL-13 TO252-3L AP1122 AP1122DG-13 AP1122DG-U AP1122DL-13 AP1122DL-U AP1122EG-U AP1122EL-U
Text: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • 1.3V maximum dropout at full load current Fixed 1.2V± 2% output voltage Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection
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AP1122
OT223-3L,
O252-3L,
OT89-3L,
O263-3L
O220-3L
OT223-3L
O252-3L:
AP1122
AP1122EG-13
AP1122EL-13
TO252-3L
AP1122DG-13
AP1122DG-U
AP1122DL-13
AP1122DL-U
AP1122EG-U
AP1122EL-U
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jd 1803 IC
Abstract: jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR
Text: RT9167/A Low-Noise, Fixed Output Voltage, 200mA/500mA LDO Regulator General Description Features The RT9167/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor low noise micropower regulator suitable for portable z Low Dropout Voltage 220mV and 200mA
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RT9167/A
200mA/500mA
RT9167/A
220mV
200mA)
100mV
pas54
jd 1803 IC
jd 1803
jd 1803 4 pin
RT9167-33CB
20cb
jd 1803 b
ke marking transistor
marking RT9167
RT9167-20CB
RT9167-27CBR
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2SA1022
Abstract: 2SC2295
Text: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.
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2SC2295
2SA1022
2SA1022
2SC2295
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2SC3936
Abstract: No abstract text available
Text: Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features 0.3–0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SC3936
45MHz
2SC3936
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2SA1790
Abstract: 2SC4626
Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4626
2SA1790
100MHz
2SA1790
2SC4626
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2SC4655
Abstract: No abstract text available
Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment
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2SC4655
45MHz
2SC4655
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sc 107 transistor
Abstract: 2SC2778 npn, transistor, sc 107 b
Text: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 +0.2 0.65±0.15 1 0.95 2.9 –0.05 ● 0.65±0.15 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and
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2SC2778
45MHz
sc 107 transistor
2SC2778
npn, transistor, sc 107 b
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Untitled
Abstract: No abstract text available
Text: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk
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53b32Q
QQ175SS
23b320
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Untitled
Abstract: No abstract text available
Text: T e m ic S 897 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications High gain linear broadband RF amplifier. Features • • Small feedback capacitance Low noise figure • Low cross modulation Dimensions in mm i aoa • Marking: 897
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for
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023b3S0
001731e
T-35-11
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transistor marking c y um-1
Abstract: MU MARKING CODE siemens SD 222 M BSP 229 diode marking 226
Text: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type b -1.7 A BSP 171 VDS -60 V Type BSP 171 Ordering Code Q67000-S224 ^DS(on) Package Marking 0.35 n SOT-223
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OT-223
Q67000-S224
E6327
transistor marking c y um-1
MU MARKING CODE
siemens SD 222 M
BSP 229
diode marking 226
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SANYO sh2a027-1
Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Text: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead
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004A-DIP14TK
010A-DIP22
005A-DIP14T
011A-DIP24
3000B-NP
3006B-
T0126
SC-43
T0220M
T03PB
SANYO sh2a027-1
3116-SIP12S
ic 4040
MPP36S
SIP14H
3047a
3151-QIP100E
3149-DIP48S
3037A-DIP20H
3029A-DIP28S
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JB TRANSISTOR SMD MARKING CODE
Abstract: Q62702-S217
Text: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V
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VPTO5540
Q62702-S217
E6296
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
JB TRANSISTOR SMD MARKING CODE
Q62702-S217
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product sgee ification NPN general purpose transistor FEATURES BC817W; BC818W PIN CONFIGURATION • High current • S -m ini package. JBi_ EL 1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN 1 'op view
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BC817W;
BC818W
OT323
BC817-16W
BC817-25W
BC817-40W
BC817W
BC818W:
BC818-16W
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marking FR PNP SOT323
Abstract: BF824W
Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323
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OT323
BF824W
BF824W
UAU037
OT323)
marking FR PNP SOT323
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2755 RF AMP, FOR VHF TV TUNER SO T-23 • LOW NF, HIGH Gp« • NF=2.0dB Typ. Gpe=23dB Typ. f=200MHr • FORWARD AGC CAPABILITY TO 30 dB ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Rating Symbol Collector-Base Voltage
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KSC2755
200MHr)
400MHz
QQ247S1
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