TRANSISTOR MARKING P1 GHZ Search Results

TRANSISTOR MARKING P1 GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARKING P1 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BFR92 Abstract: BFR92A BFR92 transistor transistor p2 marking Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,	Original	BFR92 BFR92A OT-23 BFR92A BFR92 transistor transistor p2 marking	PDF
transistor s parameters noise Abstract: NPN planar RF transistor 929 marking 23marking Text: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings	Original	D-74025 transistor s parameters noise NPN planar RF transistor 929 marking 23marking	PDF
BFR92R Abstract: BFR92 transistor bfr92 Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23	Original	BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92	PDF
Transistor BFR 96 Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92 Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1	Original	BFR92 BFR92R D-74025 Transistor BFR 96 Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic	PDF
AT-41470 Abstract: NF50 S21E Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth	Original	AT-41470 AT-41470 RN/50 NF50 S21E	PDF
41470 Abstract: UHF transistor GHz AT-41470 NF50 S21E Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41470 AT-41470 RN/50 5965-8927E 5966-4946E 41470 UHF transistor GHz NF50 S21E	PDF
at-41470 Abstract: Silicon Bipolar Transistor Hewlett-Packard Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth	Original	AT-41470 AT-41470 5965-8927E 5966-4946E Silicon Bipolar Transistor Hewlett-Packard	PDF
Untitled Abstract: No abstract text available Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-45171 ATF-45171 5965-8734E	PDF
ATF-44101 Abstract: transistor marking P1 ghz Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-44101 ATF-44101 rugg03 5965-8727E transistor marking P1 ghz	PDF
5965-8734E Abstract: max 8734E ATF-45171 Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz	Original	ATF-45171 ATF-45171 5965-8734E max 8734E	PDF
Untitled Abstract: No abstract text available Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-45101 5965-8736E	PDF
P1 260 ATF Abstract: ATF-45101 Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-45101 ATF-45101 5965-8736E P1 260 ATF	PDF
Untitled Abstract: No abstract text available Text: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz Description	Original	ATF-46101 ATF-46101 5965-8731E	PDF
Untitled Abstract: No abstract text available Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-44101 5965-8727E	PDF

bc238c Abstract: mosfet marking code AL sot-23 S-691 Text: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier	OCR Scan	569-GS bc238c mosfet marking code AL sot-23 S-691	PDF
S790T Abstract: transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790 Text: c TELEFUNKEN ELECTRONIC filC D • D 0 DSM 3 S 5 ■ ALGG S 790 T TKLitFtLDKlKtitNl electronic Creative Technologies _ r - * M j Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier	OCR Scan	569-GS S790T transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790	PDF
S763T Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE Text: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm	OCR Scan	000543Q 569-GS S763T JY marking transistor TRANSISTOR SOT-23 marking JE	PDF
TRANSISTOR BC 136 Abstract: TRANSISTOR SOT-23 marking JE Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain	OCR Scan	JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE	PDF
TRANSISTOR BC 707 Abstract: CFK40 transistor bf 274 BF 273 transistor Text: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with	OCR Scan	0Q05M13 CFK40 569-GS TRANSISTOR BC 707 CFK40 transistor bf 274 BF 273 transistor	PDF
transistor bf 271 Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c Text: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with	OCR Scan	CFK30 569-GS transistor bf 271 CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c	PDF
BF 331 TRANSISTORS Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm	OCR Scan	BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c	PDF
CF300 Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222 Text: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;	OCR Scan	50B4DIN41867 569-GS CF300 CF-300 telefunken mosfet marking code g1s transistor bf 222	PDF
K 3699 transistor Abstract: 8120D MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk Text: I TELEFUNKEN ELECTRONIC 61C D • 8120D=lt 0005M01 T ■ ALGG 7 = 5 / - SS - ' ¡ n U M M i » electronic CFK12 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common source configuration;	OCR Scan	8120D 0005M01 CFK12 569-GS K 3699 transistor MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk	PDF
marking 5y transistor Abstract: transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244 Text: TELEFUNKEN ELECTRONIC fllC D • electronic 81200% 000537» S Markedwith;CF3 U r 51 I £. Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers and mixers up to 2 GHz in common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with	OCR Scan	569-GS marking 5y transistor transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244	PDF

TRANSISTOR MARKING P1 GHZ Search Results

TRANSISTOR MARKING P1 GHZ Result Highlights (5)

TRANSISTOR MARKING P1 GHZ Datasheets Context Search

BFR92

transistor s parameters noise

BFR92R

Transistor BFR 96

AT-41470

41470

at-41470

Untitled

ATF-44101

5965-8734E

Untitled

P1 260 ATF

Untitled

Untitled

bc238c

S790T

S763T

TRANSISTOR BC 136

TRANSISTOR BC 707

transistor bf 271

BF 331 TRANSISTORS

CF300

K 3699 transistor

marking 5y transistor