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    TRANSISTOR ML1 Search Results

    TRANSISTOR ML1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ML1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ML1825MJ Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 1.0M UV Lockout (Y/N)Yes Soft Start (Y/N)Yes Output ConfigTotem-Pole Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)


    Original     		PDF ML1825MJ Code16-1155 Pins16 NumberLN01601155

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain


    Original     		PDF BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.


    Original     		PDF RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band

    Transistor motorola 513

    Abstract: TP5002S TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor
    Text: MOTOROLA Order this document by TP5002S/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed


    Original     		PDF TP5002S/D TP5002S TP5002S TP5002S/D* Transistor motorola 513 TRANSISTOR ML1 MOTOROLA TRANSISTOR 726 MOTOROLA POWER TRANSISTOR 1N4148 BD136 motorola rf Power Transistor uhf amplifier design Transistor

    LLE103101

    Abstract: LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000
    Text: LLE Series Liquid level sensors DESCRIPTION The enhanced series of liquid level sensors incorporates a the dome to the photo-transistor. When liquid covers the photo-transistor trigger which provides a digital output that dome, the effective refractive index at the dome-liquid


    Original     		PDF 100437-EN LLE103101 LLE305000 LLE205100 honeywell 940 LLE101000 LLE102101 LLE101101 LLE102000 LLE103000 LLE105000

    XL1225 transistor

    Abstract: XL1225L XL1225 XL1225-T92-B XL1225-T92-K ML1225 XL1225L-T92-B XL1225 TO-92
    Text: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.


    Original     		PDF XL/ML1225 XL1225/ML1225 XL1225L/ML1225L XL1225-T92-B XL1225L-T92-B XL1225-T92-K XL1225L-T92-K ML1225-T92-B ML1225L-T92-B ML1225-T92-K XL1225 transistor XL1225L XL1225 XL1225-T92-B XL1225-T92-K ML1225 XL1225L-T92-B XL1225 TO-92

    XL1225 transistor

    Abstract: XL1225
    Text: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.


    Original     		PDF XL/ML1225 XL1225/ML1225 XL1225G-xx-AE3-R XL1225L-xx-T92-B XL1225G-xx-T92-B XL1225L-xx-T92-K XL1225G-xx-T92-K ML1225G-xx-AE3-R ML1225L-xx-T92-B ML1225G-xx-T92-B XL1225 transistor XL1225

    XL1225 transistor

    Abstract: XL1225L XL1225 XL1225 TO-92 MARKING Scr SOT23 ML1225 xl1225 scr
    Text: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.


    Original     		PDF XL/ML1225 XL1225/ML1225 XL1225G-x-AE3-R XL1225G-x-T92-B XL1225G-x-T92-K XL1225G-x-T92-R ML1225G-x-AE3-R ML1225G-x-T92-B ML1225G-x-T92-K ML1225G-x-T92-R XL1225 transistor XL1225L XL1225 XL1225 TO-92 MARKING Scr SOT23 ML1225 xl1225 scr

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 SCR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.


    Original     		PDF XL/ML1225 XL1225/ML1225 XL1225-x-AE3-R XL1225L-x-AE3-R XL1225-x-T92-K XL1225L-x-T92-K ML1225-x-AE3-R ML1225L-x-AE3-R ML1225-x-T92-K ML1225L-x-T92-K

    MRF941

    Abstract: lansdale KMFC545
    Text: ML13158 Wideband FM IF Subsystem For Dect and Digital Applications Legacy Device: Motorola MC13158 The ML13158 is a wideband IF subsystem that is designed for high performance data and analog applications. The ML13158 has and on–board grounded collector VCO transistor that may be used with a fundamental


    Original     		PDF ML13158 MC13158 ML13158 MRF941 lansdale KMFC545

    SIEMENS saw filter

    Abstract: LC resonant CIRCUIT OPERATION Wideband FM receiver MC13158FTB ML13158 ML13158-8P MRF941 MC13158 overtone butler oscillator siemens off saw filter
    Text: ML13158 Wideband FM IF Subsystem For Dect and Digital Applications Legacy Device: Motorola MC13158 The ML13158 is a wideband IF subsystem that is designed for high performance data and analog applications. The ML13158 has an on–board grounded collector VCO transistor that may be used with a fundamental


    Original     		PDF ML13158 MC13158 ML13158 SIEMENS saw filter LC resonant CIRCUIT OPERATION Wideband FM receiver MC13158FTB ML13158-8P MRF941 MC13158 overtone butler oscillator siemens off saw filter

    SIEMENS saw filter

    Abstract: BETA-100 variable inductor "if amplifier" siemens LANSDALE SEMICONDUCTOR murata crystal filter 10.7 MC13158 MC13158FTB ML13158 ML13158-8P
    Text: ML13158 Wideband FM IF Subsystem For Dect and Digital Applications Legacy Device: Motorola MC13158 The ML13158 is a wideband IF subsystem that is designed for high performance data and analog applications. The ML13158 has an on–board grounded collector VCO transistor that may be used with a fundamental


    Original     		PDF ML13158 MC13158 ML13158 SIEMENS saw filter BETA-100 variable inductor "if amplifier" siemens LANSDALE SEMICONDUCTOR murata crystal filter 10.7 MC13158 MC13158FTB ML13158-8P

    Untitled

    Abstract: No abstract text available
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156

    TOKO 7mc8128z

    Abstract: 455 khz if transformer MPS901 TOKO CERAMIC FILTER 455 TOKO rlc variable INDUCTANCE HP8640B 455 ceramic filter carrier detect phase shift variable inductor Wavetek 164
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156 TOKO 7mc8128z 455 khz if transformer MPS901 TOKO CERAMIC FILTER 455 TOKO rlc variable INDUCTANCE HP8640B 455 ceramic filter carrier detect phase shift variable inductor Wavetek 164

    HP8640B

    Abstract: MMBV909L HP3780A J340 MPS901 751E MC13156 MC13156DW MC13156FB ML13156
    Text: ML13156 Wideband FM IF System Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in


    Original     		PDF ML13156 MC13156 ML13156 HP8640B MMBV909L HP3780A J340 MPS901 751E MC13156 MC13156DW MC13156FB

    Untitled

    Abstract: No abstract text available
    Text: OPI 3000P Optically Coupled Isolator 30kV Isolation The OPI 30000P Optically Coupled Isolator consist of a Infrared emitter coupled to a silicon photo transistor. The series is designed for applications requiring high voltage isolation between input & output.


    Original     		PDF 3000P 30000P OPI30000MC OPI3000P OPI110 OPI1264 OPI1000L OPI2000M OPI2000MK

    OPI2000MK

    Abstract: OPI3000P OPTO ISOLATOR 30KV OPI110 OPI30000MC infrared emitter ATEX 064 opto coupler
    Text: OPI 3000P Optically Coupled Isolator 30kV Isolation The OPI 30000P Optically Coupled Isolator consist of a Infrared emitter coupled to a silicon photo transistor. The series is designed for applications requiring high voltage isolation between input & output.


    Original     		PDF 3000P 30000P OPI30000MC OPI3000P OPI110 OPI1264 OPI1000L OPI2000M OPI2000MK OPI3000P OPTO ISOLATOR 30KV infrared emitter ATEX 064 opto coupler

    H24A4

    Abstract: H24A1 H24A2 H24A3 opto isolator IC 004 opto isolator
    Text: H24A1, H24A2 H24A3, H24A4 4 PIN OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm DESCRIPTION The H24A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a plastic package. 1


    Original     		PDF H24A1, H24A2 H24A3, H24A4 H24A1 75kVRMS 100pps H24A4 H24A1 H24A2 H24A3 opto isolator IC 004 opto isolator

    Untitled

    Abstract: No abstract text available
    Text: OPI 3000MC Optically Coupled Isolator 30kV Isolation The OPI 30000P Optically Coupled Isolator consist of a Infrared emitter coupled to a silicon photo transistor by a polymer fibre. The series is designed for applications requiring high voltage isolation between input & output.


    Original     		PDF 3000MC 30000P OPI30000P PG-R-FB3000 OPI3000MC 250mA000P OPI110 OPI1264 OPI1000L OPI2000M

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    k 3683 transistor

    Abstract: MJ-13080
    Text: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,


    OCR Scan     		PDF fc3b75S4 Ml13080 MJ13080 k 3683 transistor MJ-13080

    A100D

    Abstract: TP5002S
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Linear Pow er Transistor The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C.


    OCR Scan     		PDF TP5002S A100D

    2SC3616

    Abstract: PA33 ScansUX881
    Text: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA


    OCR Scan     		PDF 2SC3616 PWS10 Cycled50 SC-43B 03---in-----in 000--i PA33 ScansUX881

    Untitled

    Abstract: No abstract text available
    Text: 45E D ISOCOM COMPONENTS LTD L X >!• 'Û S ■ MfifibSlO 0 0 GD570 2 m i S O IS-201X, IS-202X, IS-203X, Hn, ¡-a"" f i 11 ft *1 ' Ml1;'1’!!1' ‘i i W ' M “» ,Vi-i! H f M ^ W "’WÜ-tiENil 'li 11 »*»■ OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT


    OCR Scan     		PDF GD570 IS-201X, IS-202X, IS-203X, IS201X IS202X IS203X IS-203X