MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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CP314
Abstract: MPS650 MPS651 CBCP68 CBCX68 CZT651
Text: PROCESS CP314 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS
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CP314
CBCP68
CBCX68
CZT651
MPS650
MPS651
CP314
MPS650
MPS651
CBCP68
CBCX68
CZT651
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transistor 936
Abstract: CBCP68 CBCX68 CP314 CZT651 MPS650 MPS651 chip die npn transistor
Text: Central TM Semiconductor Corp. PROCESS CP314 Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS
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CP314
CBCP68
CBCX68
CZT651
MPS650
MPS651
transistor 936
CBCP68
CBCX68
CP314
CZT651
MPS650
MPS651
chip die npn transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPS651 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Amplifier 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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MPS651
500mA
200mA
100mA
100MHz
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MPS751 equivalent
Abstract: MPS651 equivalent MPS751 to equivalent ic MPS651 MPS751
Text: SEMICONDUCTOR MPS751 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES A ᴌHigh Voltage : VCEO=-60V Min. . ᴌHigh Current : IC(Max.)=-1A. ᴌHigh Transition Frequency : fT=150MHz(Typ.). N ᴌComplementary to MPS651.
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MPS751
150MHz
MPS651.
MPS751 equivalent
MPS651 equivalent
MPS751 to equivalent ic
MPS651
MPS751
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MPS651 equivalent
Abstract: MPS651 MPS751
Text: SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES A ᴌHigh Voltage : VCEO=60V Min. . ᴌHigh Current : IC(Max.)=1A. ᴌHigh Transition Frequency : fT=150MHz(Typ.). N ᴌComplementary to MPS751.
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MPS651
150MHz
MPS751.
MPS651 equivalent
MPS651
MPS751
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MPS651
Abstract: MPS751 equivalent transistor mps651 MPS751
Text: SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES A High Voltage : VCEO=60V Min. . High Current : IC(Max.)=1A. High Transition Frequency : fT=150MHz(Typ.). N Complementary to MPS751.
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MPS651
150MHz
MPS751.
500mA,
MPS651
MPS751 equivalent
transistor mps651
MPS751
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driver transistor hfe 60
Abstract: MPS651 MPS751
Text: SEMICONDUCTOR MPS751 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES A High Voltage : VCEO=-60V Min. . High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). N Complementary to MPS651.
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MPS751
150MHz
MPS651.
-50mA
-500mA,
driver transistor hfe 60
MPS651
MPS751
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MPS651 equivalent
Abstract: 7121 MPS651
Text: MPS651 MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 80 Units V VCEO VEBO Collector-Emitter Voltage
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MPS651
MPS651 equivalent
7121
MPS651
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Untitled
Abstract: No abstract text available
Text: MPS651 MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Ratings 80 Units V V VCEO Collector-Emitter Voltage
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MPS651
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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2n3906 equivalent transistor
Abstract: 2N3906 samsung
Text: {SAMSUNG SEMICONDUCTOR INC MPS6517 14E 0 | 71fa.ima 0007354 t, | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Veto =40V * Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=250C) Characteristic
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MPS6517
625mW
T-29-21
2N3906
2n3906 equivalent transistor
2N3906 samsung
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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G7323
MPS6513
625mW
2N3904
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2N3906
Abstract: MPS6517
Text: [SAMSUNG SEMICONDUCTOR INC MPS6517 14E | 7 el b m M 2 Q0a73aM t, | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • C o lle cto r-E m itte r Voltage: Veto =40V • C o lle cto r D issipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°Cj
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71bmMe
MPS6517
625mW
2N3906
T-29-21
500/iA,
10/iA,
100mA,
100KHz
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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mps6514
Abstract: No abstract text available
Text: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO
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bb53T31
MPS6513
MPS6514
MPS6515
MPS6517
MPS6519.
NECC-C-002
mps6514
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