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    TRANSISTOR MV SOT23 Search Results

    TRANSISTOR MV SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MV SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1F2

    Abstract: ZXTP25020DFLTA TS16949 ZXTN25020DFL ZXTP25020DFL
    Text: ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Complementary part number ZXTN25020DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTP25020DFL 350mW ZXTN25020DFL ZXTP25020DFLTA D-81541 MARKING 1F2 ZXTP25020DFLTA TS16949 ZXTN25020DFL ZXTP25020DFL

    marking 1A3

    Abstract: ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA
    Text: ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020DFH ZXTN25020DFH marking 1A3 ZXTN25020DFH ZXTP25020DFH ZXTP25020DFHTA

    marking 1a8

    Abstract: ZXTN25015DFH ZXTN25015DFHTA ZXTP25015DFH ZXTN
    Text: ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC cont = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m⍀ PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25015DFH ZXTP25015DFH marking 1a8 ZXTN25015DFH ZXTN25015DFHTA ZXTP25015DFH ZXTN

    ZXTN25020BFH

    Abstract: ZXTN25020BFHTA ZXTP25020BFH
    Text: ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC cont = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m⍀ PD = 1.25W Complementary part number ZXTP25020BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25020BFH ZXTP25020BFH ZXTN25020BFH ZXTN25020BFHTA ZXTP25020BFH

    Zetex T 705

    Abstract: ZXTN25020CFH ZXTN25020CFHTA ZXTP25020CFH TR88 ts266
    Text: ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC cont = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m⍀ PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25020CFH ZXTP25020CFH Zetex T 705 ZXTN25020CFH ZXTN25020CFHTA ZXTP25020CFH TR88 ts266

    865 IC marking

    Abstract: ZXTN25060BFH ZXTN25060BFHTA ZXTP25060BFH h 033
    Text: ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m⍀ PD = 1.25W Complementary part number ZXTP25060BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25060BFH ZXTP25060BFH 865 IC marking ZXTN25060BFH ZXTN25060BFHTA ZXTP25060BFH h 033

    ZXTN25040DFH

    Abstract: ZXTN25040DFHTA ZXTP25040DFH
    Text: ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m⍀ PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25040DFH ZXTP25040DFH ZXTN25040DFH ZXTN25040DFHTA ZXTP25040DFH

    RBE 215 RELAY

    Abstract: ZXTN25020DFH ZXTN25020DFHTA ZXTP25020DFH relay driver
    Text: ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV BR CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN25020DFH ZXTP25020DFH RBE 215 RELAY ZXTN25020DFH ZXTN25020DFHTA ZXTP25020DFH relay driver

    ZXTN2018F

    Abstract: ZXTN2018FTA ZXTP2027F marking 851
    Text: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN2018F ZXTP2027F ZXTN2018F ZXTN2018FTA ZXTP2027F marking 851

    CM12A

    Abstract: br 2222 npn ZX5T651F
    Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		PDF ZX5T651F ZX5T651FTA CM12A br 2222 npn ZX5T651F

    transistor n53

    Abstract: ZX5T653F h 033 Marking N53
    Text: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS


    Original     		PDF ZX5T653F ZX5T653FTA transistor n53 ZX5T653F h 033 Marking N53

    marking P53 transistor

    Abstract: ZX5T753F
    Text: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		PDF ZX5T753F -120V -100V marking P53 transistor ZX5T753F

    marking P51 transistor

    Abstract: ZX5T751F 1A SOT23
    Text: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		PDF ZX5T751F ZX5T751FTA marking P51 transistor ZX5T751F 1A SOT23

    OUTLINE DIMENSIONS in inche

    Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F OUTLINE DIMENSIONS in inche marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA

    TS16949

    Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F D-81541 TS16949 ZXTN2018F ZXTP2027F ZXTP2027FTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F D-81541

    Untitled

    Abstract: No abstract text available
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW

    20MHZ

    Abstract: FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23

    Untitled

    Abstract: No abstract text available
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW

    vbe 10v, vce 500v NPN Transistor

    Abstract: L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23
    Text: FMMT459 500V Silicon NPN high voltage switching transistor Summary V BR CEV > 500V V(BR)ECV > 6V Ic(cont) = 150 mA Vce(sat) = 70 mV @ 50 mA Description This new high voltage transistor provides users with very efficient performance, combining low VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use


    Original     		PDF FMMT459 150mA 625mW vbe 10v, vce 500v NPN Transistor L 10M marking 20MHZ FMMT459 FMMT459TA FMMT459TC npn high voltage transistor 500v sot23 NPN VCEO 500V sot23

    ZXTN25012EFL

    Abstract: TS16949 ZXTN25012EFLTA
    Text: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse


    Original     		PDF ZXTN25012EFL 350mW ZXTN25012EFLTA D-81541 ZXTN25012EFL TS16949 ZXTN25012EFLTA

    TK70403

    Abstract: TK70403MTB TOKO voltage regulators
    Text: TK70403 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Internal Shutdown Control (Off Current, 0.1 µA max) Low Dropout Voltage [30 mV (typ.) at 2 mA]


    Original     		PDF TK70403 OT-26) TK70403 lo375 IC-216-TK70001 0798O0 TK70403MTB TOKO voltage regulators

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23