TRANSISTOR N 332 AB Search Results

TRANSISTOR N 332 AB Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR N 332 AB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor bc 7-25 014 Abstract: transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR Text: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous	Original	TN3904 O-237 mm/20 transistor bc 7-25 014 transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR	PDF
DMILL Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector Text: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision	Original	10MRAD D-85386 I-20157 DMILL RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector	PDF
transistor Bc 540 Abstract: TN2222 TN2222A TRANSISTOR BC 237 transistor bc icbo nA npn TR BC 237 B transistor bc 7-25 transistor Bc 540 pin Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC For use as a Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage	Original	ISO/TS16949 TN2222A O-237 C-120 TN2222ARev080304E transistor Bc 540 TN2222 TN2222A TRANSISTOR BC 237 transistor bc icbo nA npn TR BC 237 B transistor bc 7-25 transistor Bc 540 pin	PDF
MRF1150MA Abstract: mrf1150 mrf1150m Text: Order this document by MRF1150MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1150MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc	Original	MRF1150MA/D MRF1150MA MRF1150MA mrf1150 mrf1150m	PDF
PK 120 Abstract: MRF1090MA transistor J132 Text: Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc	Original	MRF1090MA/D MRF1090MA PK 120 MRF1090MA transistor J132	PDF
Triac/TRIAC TAG 92 Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90 Text: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc	Original	24Vac/dc 2-30Vac/dc 95-121Vac/dc 195-253Vac/dc 30Vac/36Vdc Triac/TRIAC TAG 92 TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)	OCR Scan	MJE3055T	PDF
JE2955T Abstract: JE2955 Text: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 \| PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )	OCR Scan	MJE2955T G0077Gfl GQG77fe JE2955T JE2955	PDF
d 331 TRANSISTOR equivalent Abstract: C 3311 transistor la 4142 74143 Text: SA MSUNG SEM ICO NDUCTOR INC 14E D \| 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)	OCR Scan	7Tb4142 KSD5010 GQG77fe d 331 TRANSISTOR equivalent C 3311 transistor la 4142 74143	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D \| 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage	OCR Scan	KSB596 KSD526 GQG77fe	PDF
samsung 217 Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002 Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR	OCR Scan	0QQ7t41 KSD5002 GQG77fe samsung 217 samsung tv NPN Transistor 1A 800V to - 92 ksd5002	PDF
Untitled Abstract: No abstract text available Text: SAM SUN G SE MI C O N D U C T OR INC MJE172 D \| 7^145 ÛÛQîtTB *f \| PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage \| CoBector-Emitter Voltage	OCR Scan	MJE172 T-33-17	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 \| QOG?^^ 2 \| PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage	OCR Scan	MJE171 T-33-17 GQG77fe	PDF
Untitled Abstract: No abstract text available Text: / = 7 *7 M S G S - T H O M S O N s L IÈ T O « T D A 8 1 7 9 FS TV VERTICAL DEFLECTION BOOSTER • POWER AMPLIFIER ■ FLYBACK SUPPLY VOLTAGE SEPARATED ■ THERMAL PROTECTION DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able	OCR Scan	TDA8179FS TDA8179FS	PDF

BT 816 transistor Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	12//S BT 816 transistor transistor bt 808 BT 815 transistor 2SD807 BT 812	PDF
616A TRANSISTOR Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2SD586A 2SD736A 2SD738A 2SD743A 2SD968A 616A TRANSISTOR 2sD586A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a	PDF
BA6212 Abstract: No abstract text available Text: Driver, 8-channel, high current BA6212 The BA6212 consists of an array of eight transistor circuits each of which has built-in input resistors. Dimensions U n its: mm BA6212 (DIP20) low voltage equipment. 20 )0 Features I • available in a DIP20 package	OCR Scan	BA6212 BA6212 DIP20) DIP20	PDF
2SB700 Abstract: 2SD717 2SB695 2SB697 2SB699 2SB702/A 2SB688 2SB691 2SB696 2SB706 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2sb700 2SB702 Tc-25 7c-25-C7 2SB703 2SB705 2SB706 2SD717 2SB695 2SB697 2SB699 2SB702/A 2SB688 2SB691 2SB696 2SB706	PDF
QM50DY-H Abstract: transistor B A O 331 Text: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB . • Ic Collector c u rre n t. BOA • V cex C ollector-em itter v o lta g e 600V • hre DC current g a in . 750	OCR Scan	QM50DY-HB E80276 E80271 QM50DY-H transistor B A O 331	PDF
Untitled Abstract: No abstract text available Text: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.	OCR Scan	2SB1388/2SD2093 2SB1388 2SD2093 00V/10A T03PML c17D7b 3720-l/4	PDF
transistor B A O 331 Abstract: mje340 equivalent d 331 TRANSISTOR equivalent Text: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J \| 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350	OCR Scan	MJE340 MJE350 0QG77fe transistor B A O 331 mje340 equivalent d 331 TRANSISTOR equivalent	PDF
Depletion MOSFET Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion	PDF
transistor 2TH Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)	OCR Scan	BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH	PDF
BF970A Abstract: No abstract text available Text: DEVELOPM ENT DATA • LtS3T3 lToQ 15 33 b This data sheet contains advance Information and =^— =— = -specifications are subject to change without notice._ N AMER PHILIPS/DISCRETE if _ 5 ■ n ~ BF970A □ bE D _	OCR Scan	BF970A BF970A	PDF

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TRANSISTOR N 332 AB Search Results

TRANSISTOR N 332 AB Result Highlights (5)

TRANSISTOR N 332 AB Datasheets Context Search

transistor bc 7-25 014

DMILL

transistor Bc 540

MRF1150MA

PK 120

Triac/TRIAC TAG 92

Untitled

JE2955T

d 331 TRANSISTOR equivalent

Untitled

samsung 217

Untitled

Untitled

Untitled

BT 816 transistor

616A TRANSISTOR

BA6212

2SB700

QM50DY-H

Untitled

transistor B A O 331

Depletion MOSFET

transistor 2TH

BF970A