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    TRANSISTOR NE696M01 Search Results

    TRANSISTOR NE696M01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NE696M01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor MJE 5332

    Abstract: Transistor 5332 lex m01 001 transistor kf 469 NE696M01 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN:


    Original     		PDF NE696M01 NE696M01 15e-9 58e-9 4e-12 18e-12 696M01 24-Hour Transistor MJE 5332 Transistor 5332 lex m01 001 transistor kf 469 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01

    IC 4047

    Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 IC 4047 bf 695 NE685 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001

    NE685

    Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 NE685 NE696M01-T1 S21E lex m01 001

    nec K 3570

    Abstract: bf 695 bjt 522 NE685 NE696M01 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 4e-12 18e-12 696M01 nec K 3570 bf 695 bjt 522 NE685 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001

    IC 7107

    Abstract: IB 6410 NE685 NE696M01 NE696M01-T1 NE696M01-T1-A S21E lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 IC 7107 IB 6410 NE685 NE696M01-T1 NE696M01-T1-A S21E lex m01 001

    transistor 433 Mhz

    Abstract: UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01 NE85630
    Text: Keyless Entry, Home Security, UHF Remote NEW! NE85630 Bipolar Transistor UPC8116GR IF Receiver IC • Low cost: 16¢ in production quantities • 15dB Gain @ 450MHz • 1.0dB Noise Figure @ 450MHz • Miniature 1.25 X 2.0mm package 315 MHz 433 MHz • 100 – 500MHz Broadband Operation


    Original     		PDF NE85630 UPC8116GR 450MHz 500MHz -100dBm NE696M01 UPB1004GS UPC2746TB OT-363 transistor 433 Mhz UPC8116GR "Bipolar Transistor" uPC8116 Low Noise uhf transistor 1817 transistor 315MHZ SAW rf 433mhz NE696M01

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    HS350

    Abstract: NE696M01 VP215 K3140
    Text: DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1008K REFERENCE FREQUENCY 27.456 MHz, 2ndIF FREQUENCY 132 kHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1008K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion


    Original     		PDF PB1008K PB1008K 36-pin HS350 NE696M01 VP215 K3140

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A

    cd 1191 cb

    Abstract: ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NE696M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 14 GHz TYP at 3 V, 10 mA TO P VIEW • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz — • HIGH GAIN: • *— 1.25 + 0.1 - *


    OCR Scan     		PDF NE696M01 NE696M01 OT-363 OT-23 696M01 05e-12 15e-12 22e-9 5e-12 cd 1191 cb ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332

    cd 1191 cb

    Abstract: lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS HIGH fT : Units in mm PACKAGE OUTLINE M01 14 G Hz T Y P at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW IMF = 1 .6 dB TYP at 2 GHz — HIGH GAIN: 2.1 ± 0.1 - -1.25 ± 0 .1 -*


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 7e-16 1e-13 4e-12 18e-12 696M01 cd 1191 cb lex m01 001

    ic CD 4047

    Abstract: lex m01 001 ha 431 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M01 HIG H fT: 14 GHz TYP at 3 V, 10 mA TOP VIEW LOW N O IS E F IG U R E : NF = 1.6 dB TYP at 2 GHz - HIG H G A IN : •— 1.25 + 0.1-»


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 05e-12 15e-12 22e-9 5e-12 13e-12 15e-9 ic CD 4047 lex m01 001 ha 431 transistor

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF