BUV11
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications.
|
Original
|
BUV11/D*
BUV11/D
BUV11
|
PDF
|
BUH150
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large
|
Original
|
BUH150
BUH150
r14525
BUH150/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large
|
Original
|
BUH150
BUH150
|
PDF
|
MTP12N10
Abstract: MTP8P10 MUR105 BUH150 MJE210 MPF930
Text: ON Semiconductort BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large
|
Original
|
BUH150
BUH150
r14525
BUH150/D
MTP12N10
MTP8P10
MUR105
MJE210
MPF930
|
PDF
|
BD139 time
Abstract: ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150 Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers.
|
Original
|
BUH150
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
BD139 time
ST BDW83C
2n5298
2SC495
BU108
2 N MJE3055
bd135 TRANSISTOR REPLACEMENT GUIDE
2N6022
transistor MJL21194
2SD382 L
|
PDF
|
BUV11
Abstract: No abstract text available
Text: ON Semiconductort BUV11 SWITCHMODEt Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE • • min. = 20 at IC = 6 A
|
Original
|
BUV11
r14525
BUV11/D
BUV11
|
PDF
|
MMBTA13
Abstract: MMBTA14
Text: SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E B 2 VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V IC 500 mA PC * 350 mW Tj 150 Tstg -55 150 Collertor Current
|
Original
|
MMBTA13/14
100mA,
MMBTA13
MMBTA14
100MHz,
MMBTA13
MMBTA14
|
PDF
|
TIP34C equivalent
Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A
|
Original
|
BUV11
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TIP34C equivalent
BU108
TRANSISTOR BC 384
5D2 6
BUV11 equivalent
BDX54
2N3025 equivalent
BU326
BU100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current 150/-150 mA ICM: Collector-base voltage 60/-60 V
|
Original
|
OT-363
OT-363
-50mA,
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UMZ1N UMZ1N SOT-363 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 150 mW (Tamb=25℃) Collector current ICM: 150/-150 mA Collector-base voltage 60/-60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
|
Original
|
-50mA,
100MHz
|
PDF
|
D1616A
Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150
|
Original
|
2SD1616/A
D1616
D1616A
width10ms,
QW-R201-008
utc d1616a
TRANSISTOR D1616
transistor d1616a
2sd1616
silicon transistor npn
d1616 transistor
|
PDF
|
D1616A
Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616
Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150
|
Original
|
2SD1616/A
D1616
D1616A
width10ms,
QW-R201-008
D1616A
utc d1616a
d1616
transistor d1616a
TRANSISTOR D1616
640 TRANSISTOR NPN
d1616 transistor
D1616A g
npn switching transistor Ic 100mA
UTC d1616
|
PDF
|
D1616A
Abstract: d1616 transistor d1616a utc d1616a UTC d1616
Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150
|
Original
|
2SD1616/A
OT-89
D1616
D1616A
width10ms,
QW-R208-015
transistor d1616a
utc d1616a
UTC d1616
|
PDF
|
D1616A
Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
Text: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150
|
Original
|
2SD1616/A
OT-89
D1616
D1616A
width10ms,
100mA
100mA
utc d1616a
transistor d1616a
TRANSISTOR D1616
npn switching transistor Ic 100mA
D1616A g
TRANSISTOR pc 135
audio output TRANSISTOR NPN
|
PDF
|
|
|
3 pin transistor 10 amp
Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
Text: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
|
Original
|
PH1214-80M
PH1214-80M
3 pin transistor 10 amp
Radar
TRANSISTOR J13
5 pin transistor 3 amp
power transistor
13 w 12 transistor
|
PDF
|
J33 TRANSISTOR
Abstract: PH1214-110M Radar
Text: Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
|
Original
|
PH1214-110M
PH1214-110M
J33 TRANSISTOR
Radar
|
PDF
|
RADAR
Abstract: PH1214-25M transistor 25 4 ghz transistor
Text: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor
|
Original
|
PH1214-25M
PH1214-25M
RADAR
transistor 25
4 ghz transistor
|
PDF
|
SILICON TRANSISTOR CORP
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350
|
OCR Scan
|
flaS402E
SDN22301
SDN22302
SDN22311
SDN22312
SDN22313
SRSP4296
SRSP4297
SRSP4298
SRSP4299
SILICON TRANSISTOR CORP
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
npn 331
STS410
STS660
free pnp and npn transistor
STS409
STS430
|
PDF
|
TRANSISTOR IFW
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150 D esigner's Data Sheet POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH150 has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers.
|
OCR Scan
|
BUH150
BUH150
TRANSISTOR IFW
|
PDF
|
psa42
Abstract: No abstract text available
Text: MPSA43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCeo =200V • Collector Dissipation: Pc max =625mW T O -9 2 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 200 200 6 500 625 150 - 5 5 ~ 150
|
OCR Scan
|
MPSA43
625mW
PSA42
100jtA,
100MHz
|
PDF
|
200W PUSH-PULL
Abstract: BAL0102-150 200w Transistor
Text: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:
|
OCR Scan
|
BAL0102-150
OT-161
002c1
200W PUSH-PULL
BAL0102-150
200w Transistor
|
PDF
|
2N6428
Abstract: No abstract text available
Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Coilector-Emitter Voltage: V c e o * 50V • Collector Dissipation: Pc max ” 625mW ABSOLUTE MAXIMUM RATINGS Characteristic (T a» 2 5 1 ;) Rating Unit 60 50 6 200 625 150 -55 -150
|
OCR Scan
|
2N6428/6428A
625mW
2N5088
100mA,
100jA
100Hz
50kfl,
10Hz-10KHz
2N6428
2N6428A
|
PDF
|
mps3569
Abstract: ebc Transistor
Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
MPS3569
MPS3569
O-92A
625mW
150mA
150mA
Oct-96
300uS,
ebc Transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Serles NPN Silicon Power Transistor 20 AMPERES NPN SILICON POW ER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications, t • • High DC current gain; hFE mln. - 20 at lc • 6 A
|
OCR Scan
|
BUV11
O-204AA
|
PDF
|
