transistor number code book FREE
Abstract: PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor
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MBD128
PUMF12
OT363
OT323
SC-70)
SCA74
613514/01/pp8
transistor number code book FREE
PNP TRANSISTOR SOT363
PUMF12
10311
marking A1 TRANSISTOR
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LIMITING INRUSH CURRENT npn
Abstract: No abstract text available
Text: LP395 LP395 Ultra Reliable Power Transistor Literature Number: SNOSBF3B LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from
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LP395
LP395
LIMITING INRUSH CURRENT npn
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transistor equivalent table
Abstract: PBLS4002D
Text: PBLS4002D 40 V PNP BISS loadswitch Rev. 01 — 1 December 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
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PBLS4002D
OT457
SC-74)
transistor equivalent table
PBLS4002D
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PBLS4004D
Abstract: No abstract text available
Text: PBLS4004D 40 V PNP BISS loadswitch Rev. 01 — 9 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
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PBLS4004D
OT457
SC-74)
PBLS4004D
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PBLS4001D
Abstract: 13905
Text: PBLS4001D 40 V PNP BISS loadswitch Rev. 01 — 30 November 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT457 SC-74 package. 1.2 Features • ■ ■ ■ ■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
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PBLS4001D
OT457
SC-74)
PBLS4001D
13905
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NSB1706DMW5T1
Abstract: transistor marking code 325
Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB1706DMW5T1
NSB1706DMW5T1,
SC-88A
NSB1706DMW5T1/D
NSB1706DMW5T1
transistor marking code 325
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Untitled
Abstract: No abstract text available
Text: MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. • Guaranteed Base–Emitter Voltage Matching
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MC3346
MC3346
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CA3146D
Abstract: No abstract text available
Text: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching
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CA3146
CA3146
CA3146D
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LM295
Abstract: LM195 LP395 LP395Z Z03A LIMITING INRUSH CURRENT npn
Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from almost
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LP395
LP395
LM295
LM195
LP395Z
Z03A
LIMITING INRUSH CURRENT npn
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a 4x transistor
Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Text: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using
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MBC13900PP/D
MBC13900
MBC13900
a 4x transistor
MOTOROLA TRANSISTOR
318M
motorola rf Power Transistor
motorola sps transistor
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LIMITING INRUSH CURRENT npn
Abstract: LP395 LP395Z LM195 Z03A NPN center base transistors
Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from
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LP395
LP395
CSP-9-111C2)
CSP-9-111S2)
CSP-9-111S2.
LIMITING INRUSH CURRENT npn
LP395Z
LM195
Z03A
NPN center base transistors
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LIMITING INRUSH CURRENT npn
Abstract: No abstract text available
Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from
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LP395
LIMITING INRUSH CURRENT npn
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24 TRANSISTOR MAKING
Abstract: LM195 LM295 C1995 LM395 LP395 LP395Z Z03A Ice-100
Text: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection This very high gain transistor has included on the chip current limiting power limiting and thermal overload protection making it difficult to destroy from
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LP395
24 TRANSISTOR MAKING
LM195
LM295
C1995
LM395
LP395Z
Z03A
Ice-100
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st zo 607
Abstract: 2SC5436 2SC5800 30614
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
st zo 607
2SC5436
2SC5800
30614
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transistor D 2394
Abstract: No abstract text available
Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT
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AT-41411
OT-143
5965-0276E
5989-2646EN
transistor D 2394
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power Junction FET advantages and disadvantages
Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor
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ED-19,
5966-3084E
power Junction FET advantages and disadvantages
5257 transistor
thermal conductivity ceramic FET
2T transistor surface mount
microwave fet
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H11AA1 45
Abstract: 303-113 H11AA1
Text: Issued March 1997 232-5648 Data Pack F ac input to transistor output opto-isolator Data Sheet RS stock numbers 303-113, 585-258 The H11AA1 RS stock no 585-258 is an ac input transistor output opto-isolator. The H11AA1 consists of two gallium arsenide infra-red emitting diodes,
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H11AA1
H11AA1
H11AA1 45
303-113
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58525
Abstract: H11AA1
Text: Issued November 1995 020-672 Data Pack F ac input to transistor output opto-isolator Data Sheet RS stock numbers 303-113, 585-258 The H11AA1 RS stock no 585-258 is an ac input transistor output opto-isolator. The H11AA1 consists of two gallium arsenide infra-red emitting diodes,
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H11AA1
H11AA1
58525
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sot-343 as
Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900PP/D
MBC13900
MBC13900
sot-343 as
a 4x transistor
MOTOROLA TRANSISTOR
SOT-343
318M
motorola sps transistor
3AA2
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5962F0721805VXC
Abstract: No abstract text available
Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of
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ISL73096RH,
ISL73127RH,
ISL73128RH,
ISL73096EH,
ISL73127EH,
ISL73128EH
ISL73096,
ISL73127
ISL73128
ISL73096
5962F0721805VXC
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Motorola
Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Text: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70
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MBC13900PP/D
MBC13900
MBC13900
Motorola
MOTOROLA TRANSISTOR
318M
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TRANSISTOR 1300
Abstract: k 1 transistor BIPOLAR TRANSISTOR transistor N J "Bipolar Transistor" 2 F transistor 1500R
Text: 1.1 FET Example 2 SK 890 A. 1st 2nd 3rd 1st group: transistor types are indicated as shown below. 1st group character Type 2 S J P-channel field effect transistor 2 S K N-channel field effect transistor 2nd group: serial numbers starting at 11 3rd group: suffix indicating changes (alphabetical order)
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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