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    TRANSISTOR PNP 0.15W Search Results

    TRANSISTOR PNP 0.15W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP 0.15W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4733 PNP

    Abstract: 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet [ /Title HFA3 046, HFA30 96, HFA31 27, HFA31 28 /Subject (Ultra High Frequency Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, NPN PNP, 8V, 15ma, uhf ghz ft, low October 1998


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA30 HFA31 HFA3127 4733 PNP 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP

    transistor 102

    Abstract: No abstract text available
    Text: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage


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    PDF BC856AW-G BC858CW-G BC856W= BC857W= BC858W= OT-323 OT-323, MIL-STD-750, QW-BTR36 BC856AW-G transistor 102

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage


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    PDF BC856AW-G BC858CW-G BC856W= BC857W= BC858W= OT-323 OT-323, MIL-STD-750, BC856AW-G BC857AW-G

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A


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    PDF BC856W= BC857W= BC858W= BC856AW-G BC858CW-G OT-323 OT-323, MIL-STD-750, QW-BTR36 SMD TRANSISTOR MARKING 5c smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B

    2n5333

    Abstract: TRANSISTOR pnp 0.15W
    Text: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N5333 -100V O-205AD) 2n5333 TRANSISTOR pnp 0.15W

    2n5333

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR PNP POWER TRANSISTOR 2N5333 • Low Saturation Voltage • Fast Switching • Hermetic TO39 Metal package. • For power amplifier and high speed Switching Applications • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF 2N5333 -100V O-205AD) 2n5333

    2N2907 PNP Transistor to 92

    Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
    Text: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2N2907 PNP Transistor to 92 pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123

    2224B

    Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
    Text: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2224B 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W

    Untitled

    Abstract: No abstract text available
    Text: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121

    transistor k 975

    Abstract: transistor nf 37 transistor k 117 GR
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.


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    PDF 2SA1162 15Watts OT-23-3L -100uAdc, -50Vdc, transistor k 975 transistor nf 37 transistor k 117 GR

    transistor k 975

    Abstract: micro transistor 117
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1162 Features • • • • PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.


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    PDF 2SA1162 15Watts OT-23-3L -100uAdc, transistor k 975 micro transistor 117

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.


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    PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23

    2SA1162GR

    Abstract: 2SA1162-G
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor


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    PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 -100uAdc, 2SA1162GR 2SA1162-G

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • PNP Silicon Plastic-Encapsulate Transistor


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    PDF 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23

    TRANSISTOR 7812

    Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
    Text: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TRANSISTOR 7812 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B 8660

    fu 9024

    Abstract: LA 7376 LA 4108 ic LA 7841 7338 transistor HFA3046 HFA3046B HFA3096 HFA3127 HFA3127B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 fu 9024 LA 7376 LA 4108 ic LA 7841 7338 transistor HFA3046B HFA3096 HFA3127B

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B

    HFA3046

    Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1162 Features • • • • Capable of 0.15Watts of Power Dissipation. Collector-current: 0.15A Collector-base Voltage: -50V


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    PDF 2SA1162 15Watts OT-23 -100uAdc, -50Vdc,

    2SA1162

    Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
    Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.


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    PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR 15Watts OT-23 2SA1162 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR

    2SA1162

    Abstract: 2SA1162G 2SA1162O
    Text: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.


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    PDF 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR OT-23 15Watts -100uAdc, -50Vdc 2SA1162G 2SA1162O

    Untitled

    Abstract: No abstract text available
    Text: r r u _ LT1123 r m TECHNOLOGY Lo w D ro p o u t R e g u la to r D river F€RTUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ The LT1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an


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    PDF LT1123 LT1123 125mA 74C906 PSA12

    Untitled

    Abstract: No abstract text available
    Text: / T U lTC A ß EC H N O LO G Y _ m i 23 L o w D ro p o u t R e g u la to r D river FCOTUfteS DCSCftlPTIOn • Extremely Low Dropout ■ Low Cost ■ Fixed 5V Output, Trimmed to ±1 % ■ 700jaA Quiescent Current ■ 3-Pin TO-92 Package ■ 1mV Line Regulation


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    PDF 700jaA LT1123 125mA LT1123

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


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    PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09