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    TRANSISTOR PNP C18 Search Results

    TRANSISTOR PNP C18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP C18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor A1015

    Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
    Text: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance


    Original     		A1015 A1015 C1815 350um 350um 110um 110um 100um 100um transistor A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		OT-23 A1015 C1815 -10mA 30MHz PDF

    A1015 sot-23

    Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		OT-23 A1015 C1815 -10mA 30MHz A1015 sot-23 A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015 PDF

    marking C15

    Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120


    Original     		2SA1612 -120V, -10mA marking C15 smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA


    Original     		OT-23 A1015 -150mA -150mA C1815 -10mA 30MHz PDF

    smd MARKING c17

    Abstract: marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		2SA811A OT-23 -10mA -120V, smd MARKING c17 marking C15 2SA811A SMD 6v Transistor MARKING C16 SOT-23 smd transistor marking c17 PDF

    A1015 BA

    Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
    Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz


    Original     		A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015 PDF

    omron h7et-NFV

    Abstract: H7ET-N1 h7et-nfv-b H7ET-NV1-H H7ET
    Text: Self-powered Time Counter H7ET Counters • Seven digits, time range 0 to 3999d23.9h. • Dual time range: 999999.9 ←→ 3999d23.9h or 999h59m59s ←→ 9999h59.9m Model Number Structure • Model Number Legend H7ET - N 1 2 3 4 1. Count Input None: No-voltage input


    Original     		3999d23 999h59m59s 9999h59 9h/3999d23 999h59m59s/9999h59 Y92F-35) omron h7et-NFV H7ET-N1 h7et-nfv-b H7ET-NV1-H H7ET PDF

    OMRON H7ec-nv manual

    Abstract: EN61010-1 VDE0106 24 VDC Relay OMRON C20 H7EC battery replacement 4-DIGIT counter with 7-SEGMENT DISPLAY H7ER-NV1-H 9999h59 H7ET-N1
    Text: Self-powered Totalizer Compact Economical Totalizer with High Visibility Available with Backlit LCD Display • Large display with 8.6-mm character height. • Includes new models with backlight for improved visibility in dimly lit places. Requires 24-VDC power supply.


    Original     		24-VDC NEMA4/IP66. VDE0106 Part100. M064-E1-03 OMRON H7ec-nv manual EN61010-1 24 VDC Relay OMRON C20 H7EC battery replacement 4-DIGIT counter with 7-SEGMENT DISPLAY H7ER-NV1-H 9999h59 H7ET-N1 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    MURS1100

    Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
    Text: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3


    Original     		MAX1865T 1000uF VP4-0047 680uF 330uF FZT749 EC10QS06 MURS1100 FDS6912A MURS1100 SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100 PDF

    sanyo capacitor 1000uf 25v

    Abstract: Capacitor 3300uF 10V electrolytic capacitor 1uF 25v 3300uf 47uf, 16v electrolytic capacitor CAPACITOR 47UF 25V ELECTROLYTIC 0805 10V CAPACITOR X7R 4.7UF 330uF 16V capacitor electrolytic capacitor 3300uf 25v sanyo capacitor 680uf 25v
    Text: DSL Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 C4 1000uF 25V MV-AX D1 CMPSH-3 20 VP 19 VL BST ILIM DH COMP C1 8.2nF C5 4.7uF 25V 18 17 C3 0.1uF 16 LX DL VL GND 1,2,3 15 [email protected] 10,11,12 C13 2x 680uF 10V MV-AX N1B 14 U1 MAX1865T R13 100k OUT 1 POK FB 3


    Original     		1000uF 680uF MAX1865T 3300pF 2N3905 3300uF 4700pF 330uF EC10QS03L EC10QS06 sanyo capacitor 1000uf 25v Capacitor 3300uF 10V electrolytic capacitor 1uF 25v 3300uf 47uf, 16v electrolytic capacitor CAPACITOR 47UF 25V ELECTROLYTIC 0805 10V CAPACITOR X7R 4.7UF 330uF 16V capacitor electrolytic capacitor 3300uf 25v sanyo capacitor 680uf 25v PDF

    ELMWOOD SENSORS

    Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
    Text: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high


    Original     		AN1308/D AN1308 AN1308/D* ELMWOOD SENSORS AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD PDF

    smd transistor 2a

    Abstract: CAPACITOR 47UF 25V ELECTROLYTIC capacitor 100uF 63V smd diode d9 SMD ZENER DIODE j1 SMD electrolytic capacitor 100uF 63V diode zener c19 resistor 15k smd transistor 123 Diode zener smd d8
    Text: STMicroelectronics: STEVAL-TSP001V1 Power Over Ethernet Board QTY 1 1 2 1 1 3 1 2 1 3 1 1 1 1 1 1 1 1 2 2 1 1 1 1 1 1 3 4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Reference C1 C10 C11, C12 C15 C18 C2, C3, C4 C7 C8, C19 C9 D1, D2, D4 D10 D3 D5 D6 D7 D8 D9 ISO1 J1, J2


    Original     		STEVAL-TSP001V1 May-07 4700pF C1812C472KDRACTU 1500uF EEV-FK0J152P EEV-FK1C681P EEV-FK1J101P EEV-HA1E470P DF1506DICT smd transistor 2a CAPACITOR 47UF 25V ELECTROLYTIC capacitor 100uF 63V smd diode d9 SMD ZENER DIODE j1 SMD electrolytic capacitor 100uF 63V diode zener c19 resistor 15k smd transistor 123 Diode zener smd d8 PDF

    FDS6982S

    Abstract: SC2442 SC2442ITSTR 223-T RTN19
    Text: SC2442 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features u u u u u u u High frequency operation up to 1 MHz reduces the size of u output inductors and capacitors. The controller has u separate power pins for both VCC and GND to improve noise u


    Original     		SC2442 SC2442 TSSOP-24 FDS6982S SC2442ITSTR 223-T RTN19 PDF

    SO BDI

    Abstract: No abstract text available
    Text: SC2442 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2442 is a high performance dual buck converter controller that can be configured for a variety of synchronous buck applications where efficiency is most


    Original     		SC2442 SC2442 TSSOP-24 SO BDI PDF

    FDS6982S

    Abstract: SC2442 SC2442H SC2442HITSTR SC2442ITSTR
    Text: SC2442/H High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2442 and SC2442H are high performance dual buck converter controllers that can be configured for a variety of synchronous buck applications where efficiency is most


    Original     		SC2442/H SC2442 SC2442H TSSOP-24 FDS6982S SC2442HITSTR SC2442ITSTR PDF

    nec marking power amplifier

    Abstract: 2SA811A marking C15
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC Current Gain: hFE 500 TYP. VCE = - 6 . 0 V , lc = - 1 . 0 mA 2 .8 + 0 .2


    OCR Scan     		2SA811A 2SA811A Tokyo456-3111 NECTOKJ22686 TC-1487A nec marking power amplifier marking C15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High DC C u rrent G ain: 500 TY P. {VCE = - 6 . 0 V , lc = - 1 . 0 m A ABSOLUTE MAXIMUM RATINGS M u x im u m Voltages and C u rrent


    OCR Scan     		2SA811A PDF

    2SA1612

    Abstract: 2SC4180 marking C15
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • Complementary to 2SC4180 • High DC Current Gain: hpg 500 TYP. V ce = —6.0 V , lc = —1.0 mA


    OCR Scan     		2SA1612 2SC4180 2SA1612 2SC4180 marking C15 PDF

    nt226

    Abstract: 2SA1612
    Text: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIALTRANSISTOR FEA T U R E S • C om plem entary to 2SC4180 • High DC C u rrent G ain: hFe 500 T Y P . VCE * - 6 . 0 V , lc - - 1 . 0 m A A B S O L U T E M A X IM U M R A T IN G S


    OCR Scan     		2SA1612 2SC4180 nt226 2SA1612 PDF

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 PDF