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    TRANSISTOR R10 Search Results

    TRANSISTOR R10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR R10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SAR522EB

    Abstract: 2sar522m
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    PDF 2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    PDF 2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522UB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -20V,-0.2A 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Abbreviated symbol : PC Applications


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    PDF 2SAR522M 2SAR522EB 2SAR522UB 2SCR522M 2SCR522EB 2SCR522UB. 2SAR522M 2SAR522EB R1010A

    2SCR522M

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    PDF 2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    PDF 2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523UB 2SAR523M 2SAR523EB R1010A

    2SAR523EB

    Abstract: 2SCR523
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Dimensions (Unit : mm) Structure PNP silicon epitaxial planar transistor VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    PDF 2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A 2SCR523

    2SCR522M

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    PDF 2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522UB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor -50V,-0.1A 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Abbreviated symbol : PB Applications Switch, LED driver


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    PDF 2SAR523M/2SAR523EB/2SAR523UB 2SCR523M/2SCR523EB/2SCR523UB. 2SAR523M 2SAR523EB 2SAR523UB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


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    PDF 2SCR522M 2SCR522EB 2SCR522UB 2SAR522M 2SAR522EB 2SAR522UB. 2SCR522M 2SCR522EB R1010A

    2SCR523

    Abstract: 2SCR523EB
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    PDF 2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523UB R1010A 2SCR523

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    PDF 2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A

    Untitled

    Abstract: No abstract text available
    Text: General purpose transistor 50V,0.1A 2SCR523M / 2SCR523EB / 2SCR523UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB


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    PDF 2SCR523M 2SCR523EB 2SCR523UB 2SAR523M 2SAR523EB 2SAR523UB. 2SCR523M 2SCR523EB R1010A

    tyco igbt

    Abstract: tyco igbt 1200V D81359
    Text: V23990-P366-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P366-F Tj150 D81359 tyco igbt tyco igbt 1200V

    tyco igbt

    Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
    Text: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P361-F D81359 tyco igbt P361 ntc thermistor 500 ohm SPWM Inverter circuit

    tyco igbt

    Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
    Text: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P360-F Tj150 D81359 tyco igbt SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter

    sc 6038

    Abstract: tyco igbt p363
    Text: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P363-F D81359 sc 6038 tyco igbt p363

    tyco igbt

    Abstract: V23990-P365-F 600v 30 kHz IGBT
    Text: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF V23990-P365-F D81359 tyco igbt V23990-P365-F 600v 30 kHz IGBT

    philips ferroxcube 4c6

    Abstract: BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1


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    PDF BLF278 OT262A1 philips ferroxcube 4c6 BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36

    ntcthermistor

    Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502
    Text: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


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    PDF -100A/ms -200A/ms D-81359 ntcthermistor V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502

    p367

    Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001
    Text: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17


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    PDF V23990-P367-F Tj150 D81359 p367 tyco igbt 1200V p367 diode tyco igbt R120 HP1001

    philips Trimmers 60 pf

    Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    PDF BLF278 SC08a OT262A1 philips Trimmers 60 pf trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun

    Untitled

    Abstract: No abstract text available
    Text: preliminary data version 03/03 V23990-P434-F-PM flow PACK 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition


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    PDF V23990-P434-F-PM D81359

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    1BW TRANSISTOR

    Abstract: transistor BU 110 diode sg 69
    Text: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK


    OCR Scan
    PDF 34G32T7 JD00244 34D32CI7 1BW TRANSISTOR transistor BU 110 diode sg 69