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    TRANSISTOR S1914 Search Results

    TRANSISTOR S1914 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    S1914

    Abstract: t3d 98 transistor S1914
    Text: rz rz ^ 7 # S G S -T H O M S O N M œ m it g T O m e i H C C /H C F 4 0 1 0 0 B 32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER • . . ■ . . FULLY STATIC OPERATION SHIFT LEFT/SHIFT RIGHT CAPABILITY MULTIPLE PACKAGE CASCADING RECIRCULATE CAPABILITY LIFO OR FIFO CAPABILFTY


    OCR Scan     		32-STAGE 100nA HCC/HCF40100B PLCC20 7T2T237 S1914 t3d 98 transistor S1914 PDF