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    TRANSISTOR S52 Search Results

    TRANSISTOR S52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT 523F Absolute Maximum Ratings *


    Original     		PDF FJY4002R FJY3002R

    FJY3002R

    Abstract: FJY4002R
    Text: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Eqivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4002R FJY3002R FJY3002R FJY4002R

    S53 MARKING

    Abstract: No abstract text available
    Text: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4002R FJY4002R FJY3002R FJY4003R S53 MARKING

    FJY3002R

    Abstract: FJY4002R
    Text: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY4002R FJY3002R FJY3002R FJY4002R

    Untitled

    Abstract: No abstract text available
    Text: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJY4002R FJY3002R OT-523F FJY4002R

    Untitled

    Abstract: No abstract text available
    Text: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)


    Original     		PDF FJY4002R FJY3002R OT-523F

    LDS274

    Abstract: 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080
    Text: PRODUCT OVERVIEW LDS274 LDS274 176 RGB x 240 262k Color TFT LCD Driver The LDS274 is a low power single chip 262k Color Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next generation wireless handsets and mobile consumer


    Original     		PDF LDS274 LDS274 760k-bit 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75P03-08 18-Jul-08

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D


    Original     		PDF TP0202T O-23ion S-52426--Rev. 14-Apr-97 TP0202T

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    TP0202T

    Abstract: No abstract text available
    Text: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D


    Original     		PDF TP0202T O-236 S-52426--Rev. 14-Apr-97 TP0202T

    VP2410L

    Abstract: No abstract text available
    Text: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VP2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 VP2410L

    70221

    Abstract: mosfet vq3001p VQ3001J VQ3001P
    Text: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications


    Original     		PDF VQ3001J/3001P S-52426--Rev. 14-Apr-97 70221 mosfet vq3001p VQ3001J VQ3001P

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    K638

    Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
    Text: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a


    OCR Scan     		PDF BUK638-1000A/B 0G44744 BUK638 -1000A -1000B K638-1OOOA/B 711Gfi5b 04M74L K638 transistor S52 DIODE 1000a fet 1000A

    transistor s49

    Abstract: KS624530 powerex ks62
    Text: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS624530 Amperes/600 transistor s49 KS624530 powerex ks62

    TIS25

    Abstract: KS52 KS524505 tis25c S-10 S-11 S-12
    Text: KS524505 Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lQ D B iH n C ftO n Transistor Module 50 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS524505 Amperes/600 TIS25 KS52 KS524505 tis25c S-10 S-11 S-12

    transistor T K 2056

    Abstract: K 2056 transistor transistor K 2056
    Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage


    OCR Scan     		PDF SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056

    BUK543

    Abstract: BUK543-100A BUK543-100B
    Text: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor


    OCR Scan     		PDF 711065b BUK543-100A/B -SOT186 BUK543 BUK543-100A BUK543-100B

    Untitled

    Abstract: No abstract text available
    Text: WWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS624530 Single Darlington Transistor Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol KS624530 Units Ti


    OCR Scan     		PDF KS624530 Amperes/600

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure


    OCR Scan     		PDF 3SK291 016pF

    S-5251

    Abstract: No abstract text available
    Text: 10A LDO 5-Pin Adjustable Linear Regulator Description This new very low dropout regula­ tor is designed to power the next generation of advanced m icropro­ cessor. To achieve very low dropout, the internal pass transistor is powered separately from the con­


    OCR Scan     		PDF CS52510-1GT5 S-5251

    ic ca 747

    Abstract: No abstract text available
    Text: 3A LDO 5-Pin Adjustable Linear Regulator D escrip tio n This new very low dropout regula­ tor is designed to pow er the next generation of advanced m icropro­ cessors. To achieve very low dropout, the internal pass transistor is powered separately from the con­


    OCR Scan     		PDF CS5253-1 CS5253-1GDP5 CS5253-1GDPR5 ic ca 747